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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0710.3725 (cond-mat)
[Submitted on 19 Oct 2007 (v1), last revised 1 Nov 2007 (this version, v3)]

Title:Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Authors:C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson
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Abstract: Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.
Comments: 3 pages, 3 figures, accepted version, to appear in Applied Physics Letters
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:0710.3725 [cond-mat.mes-hall]
  (or arXiv:0710.3725v3 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0710.3725
Journal reference: Appl Phys Lett (2007) vol. 91 pp. 213103
Related DOI: https://doi.org/10.1063/1.2816331

Submission history

From: Christie Simmons [view email]
[v1] Fri, 19 Oct 2007 15:56:52 UTC (634 KB)
[v2] Mon, 22 Oct 2007 22:32:57 UTC (634 KB)
[v3] Thu, 1 Nov 2007 21:43:41 UTC (495 KB)
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