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Condensed Matter > Materials Science

arXiv:0707.2966 (cond-mat)
[Submitted on 19 Jul 2007]

Title:Graphene based spin field effect transistor

Authors:Y. G. Semenov, K. W. Kim, J. M. Zavada
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Abstract: A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the graphene channel. Due to the negligible spin-orbital coupling in the carbon based materials, the bias can accomplishes spin manipulation by means of electrical control of electron exchange interaction with a ferromagnetic dielectric attached to the nanoribbon between source and drain. The numerical estimations show the feasibility of graphene-based spin FET if a bias varies exchange interaction on the amount around 5 meV. It was shown that the device stability to the thermal dispersion can provide the armchair nanoribbons of specific width that keeps the Dirac point in electron dispersion law.
Comments: 7 pages, 2 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0707.2966 [cond-mat.mtrl-sci]
  (or arXiv:0707.2966v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0707.2966

Submission history

From: Yuriy Semenov G [view email]
[v1] Thu, 19 Jul 2007 20:29:47 UTC (35 KB)
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