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Condensed Matter > Materials Science

arXiv:0707.0655 (cond-mat)
[Submitted on 4 Jul 2007]

Title:Resistive Switching in Cr doped SrTiO3: An X-ray Absorption Spectroscopy study

Authors:B. P. Andreasson, M. Janousch, U. Staub, G. I. Meijer, B. Delley
View a PDF of the paper titled Resistive Switching in Cr doped SrTiO3: An X-ray Absorption Spectroscopy study, by B. P. Andreasson and 4 other authors
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Abstract: X-ray absorption spectroscopy was used to study the microscopic origin of conductance and resistive switching in chromium doped strontium titanate (Cr:SrTiO3). Differences in the x-ray absorption near edge spectroscopy (XANES) at the Cr K-edge indicate that the valence of Cr changes from 3+ to 4+ underneath the anode of our sample device after the application of an electric field. Spatially resolved x-ray fluorescence microscopy ($\mu$-XRF) maps show that the Cr4+ region retracts from the anode-Cr:SrTiO3 interface after a conducting state has been achieved. This interface region is studied with extended x-ray absorption fine structure (EXAFS) and the results are compared with structural parameters obtained from density functional theory (DFT) calculations. They confirm that oxygen vacancies which are localized at the octahedron with a Cr at its center are introduced at the interface. It is proposed that the switching state is not due to a valence change of chromium but caused by changes of oxygen vacancies at the interface.
Comments: 14 pages, 4 figures, Proceedings of the E-MRS 2007 spring meeting
Subjects: Materials Science (cond-mat.mtrl-sci); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:0707.0655 [cond-mat.mtrl-sci]
  (or arXiv:0707.0655v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0707.0655
arXiv-issued DOI via DataCite

Submission history

From: Markus Janousch [view email]
[v1] Wed, 4 Jul 2007 16:16:47 UTC (505 KB)
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