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Single-charge occupation in ambipolar quantum dots
Abstract: We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and fe… ▽ More
Submitted 14 January, 2020; originally announced January 2020.
Comments: 13 pages, 4 figures
Journal ref: Phys. Rev. B 101, 201301 (2020)
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arXiv:1612.00357 [pdf, ps, other]
Influence of the external pressure on the quantum correlations of molecular magnets
Abstract: The study of quantum correlations in solid state systems is a large avenue for research and their detection and manipulation are an actual challenge to overcome. In this context, we show by using first-principles calculations on the prototype material KNaCuSi$_{4}$O$_{10}$ that the degree of quantum correlations in this spin cluster system can be managed by external hydrostatic pressure. Our resul… ▽ More
Submitted 1 December, 2016; originally announced December 2016.
Report number: EPL, 117 (2017) 20004