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Nanoscale inhomogeneity of charge density waves dynamics in La$_{2-x}$Sr$_x$NiO$_4$
Authors:
Gaetano Campi,
Antonio Bianconi,
Boby Joseph,
Shrawan Kr Mishra,
Leonard Muller,
Alexey Zozulya,
Agustinus Agung Nugroho,
Sujoy Roy,
Michael Sprung,
Alessandro Ricci
Abstract:
While stripe phases with broken rotational symmetry of charge density appear in many complex correlated systems, the heterogeneity of spatial ordering and dynamics remains elusive. This missing info is at the heart of understanding the structure and function relation in quantum complex materials. We focus here on the spatial heterogeneity of the motion of charge density wave (CDW) at nanoscale in…
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While stripe phases with broken rotational symmetry of charge density appear in many complex correlated systems, the heterogeneity of spatial ordering and dynamics remains elusive. This missing info is at the heart of understanding the structure and function relation in quantum complex materials. We focus here on the spatial heterogeneity of the motion of charge density wave (CDW) at nanoscale in the archetypal case of La$_{2-x}$Sr$_x$NiO$_{4+y}$ perovskite at low temperature. We report compelling evidence that the unconventional increasing motion of CDW at T < 50K is related with the decreasing of its correlation length using resonant soft X-ray photon correlation spectroscopy (XPCS). The key result of this work is the direct visualization of nanoscale spatial inhomogeneity of CDW relaxation dynamics by scanning micro X-ray diffraction (SmXRD) showing a nanoscale landscape of percolating short range dynamic CDW puddles competing with large quasi-static CDW puddles giving rise to a novel form of nanoscale phase separation of the incommensurate stripes order landscape.
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Submitted 26 March, 2022;
originally announced May 2022.
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Principles of an atomtronic transistor
Authors:
Seth C. Caliga,
Cameron J. E. Straatsma,
Alex A. Zozulya,
Dana Z. Anderson
Abstract:
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlle…
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A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source-gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.
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Submitted 14 December, 2015;
originally announced December 2015.
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Principles of an Atomtronic Battery
Authors:
Alex A. Zozulya,
Dana Z. Anderson
Abstract:
An asymmetric atom trap is investigated as a means to implement a "battery" that supplies ultracold atoms to an atomtronic circuit. The battery model is derived from a scheme for continuous loading of a non-dissipative atom trap proposed by Roos et al.(Europhysics Letters V61, 187 (2003)). The trap is defined by longitudinal and transverse trap frequencies and corresponding trap energy heights. Th…
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An asymmetric atom trap is investigated as a means to implement a "battery" that supplies ultracold atoms to an atomtronic circuit. The battery model is derived from a scheme for continuous loading of a non-dissipative atom trap proposed by Roos et al.(Europhysics Letters V61, 187 (2003)). The trap is defined by longitudinal and transverse trap frequencies and corresponding trap energy heights. The battery's ability to supply power to a load is evaluated as a function of an input atom flux and power. For given trap parameters and input flux the battery is shown to have a resonantly optimum value of input power. The battery behavior can be cast in terms of an equivalent circuit model; specifically, for fixed input flux and power the battery is modeled in terms of a Thévenin equivalent chemical potential and internal resistance. The internal resistance establishes the maximum power that can be supplied to a circuit, the heat that will be generated by the battery, and that noise will be imposed on the circuit. We argue that any means of implementing a battery for atomtronics can be represented by a Thévenin equivalent and that its performance will likewise be determined by an internal resistance.
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Submitted 6 August, 2013;
originally announced August 2013.
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A Matterwave Transistor Oscillator
Authors:
Seth C. Caliga,
Cameron J. E. Straatsma,
Alex A. Zozulya,
Dana Z. Anderson
Abstract:
An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a…
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An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.
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Submitted 13 September, 2013; v1 submitted 15 August, 2012;
originally announced August 2012.
