-
Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices
Authors:
Binhui Hu,
Erick D. Ochoa,
Daniel Sanchez,
Justin K. Perron,
Neil M. Zimmerman,
M. D. Stewart Jr
Abstract:
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accoun…
▽ More
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance $C_m$ between defects and the quantum dot, and increase in the total defect capacitance $C_d$ due to the top gate. These results depart from the accepted understanding that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in developing SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.
△ Less
Submitted 11 July, 2018;
originally announced July 2018.
-
Machine Learning techniques for state recognition and auto-tuning in quantum dots
Authors:
Sandesh S. Kalantre,
Justyna P. Zwolak,
Stephen Ragole,
Xingyao Wu,
Neil M. Zimmerman,
M. D. Stewart,
Jacob M. Taylor
Abstract:
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fort…
▽ More
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in quantum-dot based architectures, the parameter space grows substantially with the number of qubits, and may become a limit to scalability. Fortunately, machine learning techniques for pattern recognition and image classification using so-called deep neural networks have shown surprising successes for computer-aided understanding of complex systems. In this work, we use deep and convolutional neural networks to characterize states and charge configurations of semiconductor quantum dot arrays when one can only measure a current-voltage characteristic of transport (here conductance) through such a device. For simplicity, we model a semiconductor nanowire connected to leads and capacitively coupled to depletion gates using the Thomas-Fermi approximation and Coulomb blockade physics. We then generate labelled training data for the neural networks, and find at least $90\,\%$ accuracy for charge and state identification for single and double dots purely from the dependence of the nanowire's conductance upon gate voltages. Using these characterization networks, we can then optimize the parameter space to achieve a desired configuration of the array, a technique we call `auto-tuning'. Finally, we show how such techniques can be implemented in an experimental setting by applying our approach to an experimental data set, and outline further problems in this domain, from using charge sensing data to extensions to full one and two-dimensional arrays, that can be tackled with machine learning.
△ Less
Submitted 15 February, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
-
Possible hundredfold enhancement in the direct magnetic coupling of a single atomic spin to a circuit resonator
Authors:
Bahman Sarabi,
Peihao Huang,
Neil M. Zimmerman
Abstract:
We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a single donor implanted in enriched $^{28}$Si. The resonator impedance is significantly smaller than the practically achievable limit using prevalent c…
▽ More
We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a single donor implanted in enriched $^{28}$Si. The resonator impedance is significantly smaller than the practically achievable limit using prevalent coplanar resonators. Furthermore, the resonator includes a nano-scale spiral inductor to spatially focus the magnetic field from the photons at the location of the implanted donor. The design promises approximately two orders of magnitude increase in the local magnetic field, and thus the spin to photon coupling rate $g$, compared to the estimated coupling rate to the magnetic field of coplanar transmission-line resonators. We show that by using niobium (aluminum) as the resonator's superconductor and a single phosphorous (bismuth) atom as the donor, a coupling rate of $g/2π$=0.24 MHz (0.39 MHz) can be achieved in the single photon regime. For this hybrid cavity quantum electrodynamic system, such enhancement in $g$ is sufficient to enter the strong coupling regime.
△ Less
Submitted 2 July, 2018; v1 submitted 7 February, 2017;
originally announced February 2017.
