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Inferring charge noise source locations from correlations in spin qubits
Authors:
Juan S. Rojas-Arias,
Akito Noiri,
Jun Yoneda,
Peter Stano,
Takashi Nakajima,
Kenta Takeda,
Takashi Kobayashi,
Giordano Scappucci,
Seigo Tarucha,
Daniel Loss
Abstract:
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra do not fit well a power law; rather, we can recognize a few individual two-level fluctuators (TLFs). We demonstra…
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We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra do not fit well a power law; rather, we can recognize a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.
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Submitted 9 May, 2025;
originally announced May 2025.
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The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
Authors:
Juan S. Rojas-Arias,
Yohei Kojima,
Kenta Takeda,
Peter Stano,
Takashi Nakajima,
Jun Yoneda,
Akito Noiri,
Takashi Kobayashi,
Daniel Loss,
Seigo Tarucha
Abstract:
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit noise power spectrum over a frequency range of nine orders of magnitude without any gaps. We find that the low-frequency noise spectrum is similar across three d…
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We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit noise power spectrum over a frequency range of nine orders of magnitude without any gaps. We find that the low-frequency noise spectrum is similar across three different devices suggesting that it is dominated by the hyperfine coupling to nuclei. The effects of charge noise are smaller, but not negligible, and are device dependent as confirmed from the noise cross-correlations. We also observe differences to spectra reported in GaAs {[Phys. Rev. Lett. 118, 177702 (2017), Phys. Rev. Lett. 101, 236803 (2008)]}, which we attribute to the presence of the valley degree of freedom in silicon. Finally, we observe $T_2^*$ to increase upon increasing the external magnetic field, which we speculate is due to the increasing field-gradient of the micromagnet suppressing nuclear spin diffusion.
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Submitted 24 August, 2024;
originally announced August 2024.
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Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
Authors:
Juan S. Rojas-Arias,
Akito Noiri,
Peter Stano,
Takashi Nakajima,
Jun Yoneda,
Kenta Takeda,
Takashi Kobayashi,
Amir Sammak,
Giordano Scappucci,
Daniel Loss,
Seigo Tarucha
Abstract:
We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the me…
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We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the measurements and predicts a polynomial decay of correlations with interqubit distance. Our results quantify long-range correlations of noise dephasing quantum-dot spin qubits arranged in arrays, essential for scalability and fault-tolerance of such systems.
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Submitted 22 February, 2023;
originally announced February 2023.
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Feedback-based active reset of a spin qubit in silicon
Authors:
Takashi Kobayashi,
Takashi Nakajima,
Kenta Takeda,
Akito Noiri,
Jun Yoneda,
Seigo Tarucha
Abstract:
Feedback control of qubits is a highly demanded technique for advanced quantum information protocols such as quantum error correction. Here we demonstrate active reset of a silicon spin qubit using feedback control. The active reset is based on quantum non-demolition readout of the qubit and feedback according to the readout results, which is enabled by hardware data processing and sequencing. We…
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Feedback control of qubits is a highly demanded technique for advanced quantum information protocols such as quantum error correction. Here we demonstrate active reset of a silicon spin qubit using feedback control. The active reset is based on quantum non-demolition readout of the qubit and feedback according to the readout results, which is enabled by hardware data processing and sequencing. We incorporate a cumulative readout technique to the active reset protocol, enhancing initialization fidelity above a limitation imposed by accuracy of the single QND measurement fidelity. Based on an analysis of the reset protocol, we suggest a way to achieve the initialization fidelity sufficient for the fault-tolerant quantum computation.
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Submitted 6 September, 2022;
originally announced September 2022.
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Noise-correlation spectrum for a pair of spin qubits in silicon
Authors:
J. Yoneda,
J. S. Rojas-Arias,
P. Stano,
K. Takeda,
A. Noiri,
T. Nakajima,
D. Loss,
S. Tarucha
Abstract:
Semiconductor qubits are appealing for building quantum processors as they may be densely integrated due to small footprint. However, a high density raises the issue of noise correlated across different qubits, which is of practical concern for scalability and fault tolerance. Here, we analyse and quantify in detail the degree of noise correlation in a pair of neighbouring silicon spin qubits ~100…
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Semiconductor qubits are appealing for building quantum processors as they may be densely integrated due to small footprint. However, a high density raises the issue of noise correlated across different qubits, which is of practical concern for scalability and fault tolerance. Here, we analyse and quantify in detail the degree of noise correlation in a pair of neighbouring silicon spin qubits ~100 nm apart. We evaluate all a-priori independent auto- and cross- power spectral densities of noise as a function of frequency. We reveal strong inter-qubit noise correlation with a correlation strength as large as ~0.7 at ~1 Hz (70% of the maximum in-phase correlation), even in the regime where the spin-spin exchange interaction contributes negligibly. We furthermore find that fluctuations of single-spin precession rates are strongly correlated with exchange noise, giving away their electrical origin. Noise cross-correlations have thus enabled us to pinpoint the most influential noise in the present device among compelling mechanisms including nuclear spins. Our work presents a powerful tool set to assess and identify the noise acting on multiple qubits and highlights the importance of long-range electric noise in densely packed silicon spin qubits.
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Submitted 30 August, 2022;
originally announced August 2022.
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Control of dephasing in spin qubits during coherent transport in silicon
Authors:
MengKe Feng,
Jun Yoneda,
Wister Huang,
Yue Su,
Tuomo Tanttu,
Chih Hwan Yang,
Jesus D. Cifuentes,
Kok Wai Chan,
William Gilbert,
Ross C. C. Leon,
Fay E. Hudson,
Kohei M. Itoh,
Arne Laucht,
Andrew S. Dzurak,
Andre Saraiva
Abstract:
One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quan…
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One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quantum dots in silicon and identified possible sources of error. In this theoretical study, we investigate these errors and analyze the impact of tunnel coupling, magnetic field and spin-orbit effects on the spin transfer process. The interplay between these effects gives rise to double dot configurations that include regimes of enhanced decoherence that should be avoided for quantum information processing. These conclusions permit us to extrapolate previous experimental conclusions and rationalize the future design of large scale quantum processors.
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Submitted 20 February, 2023; v1 submitted 24 July, 2022;
originally announced July 2022.
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Fast Bayesian tomography of a two-qubit gate set in silicon
Authors:
T. J. Evans,
W. Huang,
J. Yoneda,
R. Harper,
T. Tanttu,
K. W. Chan,
F. E. Hudson,
K. M. Itoh,
A. Saraiva,
C. H. Yang,
A. S. Dzurak,
S. D. Bartlett
Abstract:
Benchmarking and characterising quantum states and logic gates is essential in the development of devices for quantum computing. We introduce a Bayesian approach to self-consistent process tomography, called fast Bayesian tomography (FBT), and experimentally demonstrate its performance in characterising a two-qubit gate set on a silicon-based spin qubit device. FBT is built on an adaptive self-con…
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Benchmarking and characterising quantum states and logic gates is essential in the development of devices for quantum computing. We introduce a Bayesian approach to self-consistent process tomography, called fast Bayesian tomography (FBT), and experimentally demonstrate its performance in characterising a two-qubit gate set on a silicon-based spin qubit device. FBT is built on an adaptive self-consistent linearisation that is robust to model approximation errors. Our method offers several advantages over other self-consistent tomographic methods. Most notably, FBT can leverage prior information from randomised benchmarking (or other characterisation measurements), and can be performed in real time, providing continuously updated estimates of full process matrices while data is acquired.
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Submitted 30 July, 2021;
originally announced July 2021.
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Designs for a two-dimensional Si quantum dot array with spin qubit addressability
Authors:
Masahiro Tadokoro,
Takashi Nakajima,
Takashi Kobayashi,
Kenta Takeda,
Akito Noiri,
Kaito Tomari,
Jun Yoneda,
Seigo Tarucha,
Tetsuo Kodera
Abstract:
Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose…
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Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 x 3 quantum dot device design and a larger-scale design as a longer-term target. The design goal is to realize qubit connectivity to the four nearest neighbors while ensuring addressability. We show that a 3 x 3 quantum dot array can execute four-qubit Grover's algorithm more efficiently than the one-dimensional counterpart. To scale up the two-dimensional array beyond 3 x 3, we propose a novel structure with ferromagnetic gate electrodes. Our results showcase the possibility of medium-sized quantum processors in Si with fast quantum logic gates and long coherence times.
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Submitted 11 July, 2021; v1 submitted 21 June, 2021;
originally announced June 2021.
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Roadmap on quantum nanotechnologies
Authors:
Arne Laucht,
Frank Hohls,
Niels Ubbelohde,
M Fernando Gonzalez-Zalba,
David J Reilly,
Søren Stobbe,
Tim Schröder,
Pasquale Scarlino,
Jonne V Koski,
Andrew Dzurak,
Chih-Hwan Yang,
Jun Yoneda,
Ferdinand Kuemmeth,
Hendrik Bluhm,
Jarryd Pla,
Charles Hill,
Joe Salfi,
Akira Oiwa,
Juha T Muhonen,
Ewold Verhagen,
Matthew D LaHaye,
Hyun Ho Kim,
Adam W Tsen,
Dimitrie Culcer,
Attila Geresdi
, et al. (4 additional authors not shown)
Abstract:
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu…
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Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.
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Submitted 19 January, 2021;
originally announced January 2021.
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Probabilistic teleportation of a quantum dot spin qubit
Authors:
Y. Kojima,
T. Nakajima,
A. Noiri,
J. Yoneda,
T. Otsuka,
K. Takeda,
S. Li,
S. D. Bartlett,
A. Ludwig,
A. D. Wieck,
S. Tarucha
Abstract:
Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantu…
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Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantum teleportation based on direct Bell measurement for a single electron spin qubit in a triple quantum dot utilizing the Pauli exclusion principle to create and detect maximally entangled state s . T he single spin polarization is teleported from the input qubit to the output qubit with a fidelity of 0.9 1 We find this fidelity is primarily limited by singlet triplet mixing which can be improved by optimizing the device parameters Our results may be extended to quantum algorithms with a larger number of se miconductor spin qubit s
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Submitted 9 November, 2020;
originally announced November 2020.
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Quantum tomography of an entangled three-spin state in silicon
Authors:
Kenta Takeda,
Akito Noiri,
Takashi Nakajima,
Jun Yoneda,
Takashi Kobayashi,
Seigo Tarucha
Abstract:
Quantum entanglement is a fundamental property of coherent quantum states and an essential resource for quantum computing. While two-qubit entanglement has been demonstrated for spins in silicon, creation of multipartite entanglement, a first step toward implementing quantum error correction, has remained challenging due to the difficulties in controlling a multi-qubit array, such as device disord…
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Quantum entanglement is a fundamental property of coherent quantum states and an essential resource for quantum computing. While two-qubit entanglement has been demonstrated for spins in silicon, creation of multipartite entanglement, a first step toward implementing quantum error correction, has remained challenging due to the difficulties in controlling a multi-qubit array, such as device disorder, magnetic and electrical noises and exacting exchange controls. Here, we show operation of a fully functional three-qubit array in silicon and generation of a three-qubit Greenberger-Horne-Zeilinger (GHZ) state. We obtain a state fidelity of 88.0 percent by quantum state tomography, which witnesses a genuine GHZ-class quantum entanglement that is not biseparable. Our result shows the potential of silicon-based qubit platform for demonstrations of multiqubit quantum algorithms.
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Submitted 20 October, 2020;
originally announced October 2020.
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Coherent spin qubit transport in silicon
Authors:
J. Yoneda,
W. Huang,
M. Feng,
C. H. Yang,
K. W. Chan,
T. Tanttu,
W. Gilbert,
R. C. C. Leon,
F. E. Hudson,
K. M. Itoh,
A. Morello,
S. D. Bartlett,
A. Laucht,
A. Saraiva,
A. S. Dzurak
Abstract:
A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an ele…
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A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an electron spin qubit between quantum dots in isotopically-enriched silicon. We observe qubit precession in the inter-site tunnelling regime and assess the impact of qubit transport using Ramsey interferometry and quantum state tomography techniques. We report a polarization transfer fidelity of 99.97% and an average coherent transfer fidelity of 99.4%. Our results provide key elements for high-fidelity, on-chip quantum information distribution, as long envisaged, reinforcing the scaling prospects of silicon-based spin qubits.
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Submitted 3 September, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
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Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control
Authors:
Amanda Seedhouse,
Tuomo Tanttu,
Ross C. C. Leon,
Ruichen Zhao,
Kuan Yen Tan,
Bas Hensen,
Fay E. Hudson,
Kohei M. Itoh,
Jun Yoneda,
Chih Hwan Yang,
Andrea Morello,
Arne Laucht,
Susan N. Coppersmith,
Andre Saraiva,
Andrew S. Dzurak
Abstract:
Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained…
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Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained only between parallel spin configurations, with $|T_0\rangle$ relaxing quickly to the singlet state and leaving $|T_+\rangle$ and $|T_-\rangle$ states blockaded -- which we call \textit{parity readout}. Both types of blockade can be used for readout in quantum computing, but it is crucial to maximize the fidelity and understand in which regime the system operates. We devise and perform an experiment in which the crossover between parity and singlet-triplet readout can be identified by investigating the underlying physics of the $|T_0\rangle$ relaxation rate. This rate is tunable over four orders of magnitude by controlling the Zeeman energy difference between the dots induced by spin-orbit coupling, which in turn depends on the direction of the applied magnetic field. We suggest a theoretical model incorporating charge noise and relaxation effects that explains quantitatively our results. Investigating the model both analytically and numerically, we identify strategies to obtain on-demand either singlet-triplet or parity readout consistently across large arrays of dots. We also discuss how parity readout can be used to perform full two-qubit state tomography and its impact on quantum error detection schemes in large-scale silicon quantum computers.
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Submitted 13 May, 2021; v1 submitted 15 April, 2020;
originally announced April 2020.
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Spin orbit field in a physically defined p type MOS silicon double quantum dot
Authors:
Marian Marx,
Jun Yoneda,
Ángel Gutiérrez Rubio,
Peter Stano,
Tomohiro Otsuka,
Kenta Takeda,
Sen Li,
Yu Yamaoka,
Takashi Nakajima,
Akito Noiri,
Daniel Loss,
Tetsuo Kodera,
Seigo Tarucha
Abstract:
We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel.…
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We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components.
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Submitted 17 March, 2020; v1 submitted 16 March, 2020;
originally announced March 2020.
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Coherence of a driven electron spin qubit actively decoupled from quasi-static noise
Authors:
Takashi Nakajima,
Akito Noiri,
Kento Kawasaki,
Jun Yoneda,
Peter Stano,
Shinichi Amaha,
Tomohiro Otsuka,
Kenta Takeda,
Matthieu R. Delbecq,
Giles Allison,
Arne Ludwig,
Andreas D. Wieck,
Daniel Loss,
Seigo Tarucha
Abstract:
The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity,…
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The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $π$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits.
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Submitted 13 March, 2020; v1 submitted 9 January, 2020;
originally announced January 2020.
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Repetitive single electron spin readout in silicon
Authors:
J. Yoneda,
K. Takeda,
A. Noiri,
T. Nakajima,
S. Li,
J. Kamioka,
T. Kodera,
S. Tarucha
Abstract:
Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum n…
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Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measurement errors. However, it has remained elusive for an electron spin in silicon as it involves exquisite exposure of the system to the external circuitry for readout while maintaining the coherence and integrity of the qubit. Here we show that an electron spin qubit in silicon can be measured in a highly non-demolition manner by probing another electron spin in a neighboring dot Ising-coupled to the qubit spin. The high non-demolition fidelity (99% on average) enables over 20 readout repetitions of a single spin state, yielding an overall average measurement fidelity of up to 95% within 1.2 ms. We further demonstrate that our repetitive QND readout protocol can realize heralded high-fidelity (> 99.6%) ground-state preparation. Our QND-based measurement and preparation, mediated by a second qubit of the same kind, will allow for a new class of quantum information protocols with electron spins in silicon without compromising the architectural homogeneity.
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Submitted 25 October, 2019;
originally announced October 2019.
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Radio-frequency detected fast charge sensing in undoped silicon quantum dots
Authors:
Akito Noiri,
Kenta Takeda,
Jun Yoneda,
Takashi Nakajima,
Tetsuo Kodera,
Seigo Tarucha
Abstract:
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we d…
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Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 μs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.
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Submitted 12 February, 2020; v1 submitted 8 October, 2019;
originally announced October 2019.
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Quantum nondemolition measurement of an electron spin qubit
Authors:
Takashi Nakajima,
Akito Noiri,
Jun Yoneda,
Matthieu R. Delbecq,
Peter Stano,
Tomohiro Otsuka,
Kenta Takeda,
Shinichi Amaha,
Giles Allison,
Kento Kawasaki,
Arne Ludwig,
Andreas D. Wieck,
Daniel Loss,
Seigo Tarucha
Abstract:
Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defin…
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Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an "ideal" projective measurement that does not introduce a back action on the measured observable, known as a quantum nondemolition (QND) measurement. Here we demonstrate an all-electrical QND measurement of a single electron spin in a gate-defined quantum dot via an exchange-coupled ancilla qubit. The ancilla qubit, encoded in the singlet-triplet two-electron subspace, is entangled with the single spin and subsequently read out in a single shot projective measurement at a rate two orders of magnitude faster than the spin relaxation. The QND nature of the measurement protocol is evidenced by observing a monotonic increase of the readout fidelity over one hundred repetitive measurements against arbitrary input states. We extract information from the measurement record using the method of optimal inference, which is tolerant to the presence of the relaxation and dephasing. The QND measurement allows us to observe spontaneous spin flips (quantum jumps) in an isolated system with small disturbance. Combined with the high-fidelity control of spin qubits, these results pave the way for various measurement-based quantum state manipulations including quantum error correction protocols.
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Submitted 25 April, 2019;
originally announced April 2019.
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A silicon quantum-dot-coupled nuclear spin qubit
Authors:
Bas Hensen,
Wister Wei Huang,
Chih-Hwan Yang,
Kok Wai Chan,
Jun Yoneda,
Tuomo Tanttu,
Fay E. Hudson,
Arne Laucht,
Kohei M. Itoh,
Thaddeus D. Ladd,
Andrea Morello,
Andrew S. Dzurak
Abstract:
Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those in single atom dopants or crystal defects. However, establishing long-range interactions between multiple dopants or defects is challenging. Conversely, in lith…
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Single nuclear spins in the solid state have long been envisaged as a platform for quantum computing, due to their long coherence times and excellent controllability. Measurements can be performed via localised electrons, for example those in single atom dopants or crystal defects. However, establishing long-range interactions between multiple dopants or defects is challenging. Conversely, in lithographically-defined quantum dots, tuneable interdot electron tunnelling allows direct coupling of electron spin-based qubits in neighbouring dots. Moreover, compatibility with semiconductor fabrication techniques provides a compelling route to scaling to large numbers of qubits. Unfortunately, hyperfine interactions are typically too weak to address single nuclei. Here we show that for electrons in silicon metal-oxide-semiconductor quantum dots the hyperfine interaction is sufficient to initialise, read-out and control single silicon-29 nuclear spins, yielding a combination of the long coherence times of nuclear spins with the flexibility and scalability of quantum dot systems. We demonstrate high-fidelity projective readout and control of the nuclear spin qubit, as well as entanglement between the nuclear and electron spins. Crucially, we find that both the nuclear spin and electron spin retain their coherence while moving the electron between quantum dots, paving the way to long range nuclear-nuclear entanglement via electron shuttling. Our results establish nuclear spins in quantum dots as a powerful new resource for quantum processing.
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Submitted 28 June, 2019; v1 submitted 17 April, 2019;
originally announced April 2019.
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Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array
Authors:
Takashi Nakajima,
Matthieu R. Delbecq,
Tomohiro Otsuka,
Peter Stano,
Shinichi Amaha,
Jun Yoneda,
Akito Noiri,
Kento Kawasaki,
Kenta Takeda,
Giles Allison,
Arne Ludwig,
Andreas D. Wieck,
Daniel Loss,
Seigo Tarucha
Abstract:
We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the durati…
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We demonstrate a new method for projective single-shot measurement of two electron spin states (singlet versus triplet) in an array of gate-defined lateral quantum dots in GaAs. The measurement has very high fidelity and is robust with respect to electric and magnetic fluctuations in the environment. It exploits a long-lived metastable charge state, which increases both the contrast and the duration of the charge signal distinguishing the two measurement outcomes. This method allows us to evaluate the charge measurement error and the spin-to-charge conversion error separately. We specify conditions under which this method can be used, and project its general applicability to scalable quantum dot arrays in GaAs or silicon.
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Submitted 20 July, 2017; v1 submitted 13 January, 2017;
originally announced January 2017.
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Coherent transfer of electron spin correlations assisted by dephasing noise
Authors:
Takashi Nakajima,
Matthieu R. Delbecq,
Tomohiro Otsuka,
Shinichi Amaha,
Jun Yoneda,
Akito Noiri,
Kenta Takeda,
Giles Allison,
Arne Ludwig,
Andreas D. Wieck,
Xuedong Hu,
Franco Nori,
Seigo Tarucha
Abstract:
Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of ele…
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Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of electron spins confined in semiconductor quantum dots. One party of an entangled spin pair, prepared at a single site, is transferred to the next site and then adiabatically swapped with a third spin using a transition across a multi-level avoided crossing. This process is accelerated by the noise-induced dephasing through a variant of the quantum Zeno effect, without sacrificing the coherence of the entangled state. Our finding brings insight into the spin dynamics in open quantum systems coupled to noisy environments, opening an avenue to quantum state manipulation utilizing decoherence effects.
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Submitted 31 May, 2018; v1 submitted 8 April, 2016;
originally announced April 2016.
