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Experimental observation of spin defects in van der Waals material GeS$_2$
Authors:
W. Liu,
S. Li,
N. -J. Guo,
X. -D. Zeng,
L. -K. Xie,
J. -Y. Liu,
Y. -H. Ma,
Y. -Q. Wu,
Y. -T. Wang,
Z. -A. Wang,
J. -M. Ren,
C. Ao,
J. -S. Xu,
J. -S. Tang,
A. Gali,
C. -F. Li,
G. -C. Guo
Abstract:
Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. The layered host materials not only facilitate seamless integration with optoelectronic devices but also enable the formation of heterostructures with on-demand functionality. Furthermore, their atomic thickness renders them pa…
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Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. The layered host materials not only facilitate seamless integration with optoelectronic devices but also enable the formation of heterostructures with on-demand functionality. Furthermore, their atomic thickness renders them particularly suitable for sensing applications. However, the short coherence times of the spin defects in hBN limit them in quantum applications that require extended coherence time. One primary reason is that both boron and nitrogen atoms have non-zero nuclear spins. Here, we present another 2D material germanium disulfide ($β$-GeS$_2$) characterized by a wide bandgap and potential nuclear-spin-free lattice. This makes it as a promising host material for spin defects that possess long-coherence time. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal $β$-GeS$_2$. Coherent control of one type defect has been successfully demonstrated at both 5 K and room temperature, and the coherence time $T_2$ can achieve tens of microseconds, 100-folds of that of negatively charged boron vacancy (V$_{\text{B}}^-$) in hBN, satisfying the minimal threshold required for metropolitan quantum networks--one of the important applications of spins. We entatively assign the observed optical signals come from substitution defects. Together with previous theoretical prediction, we believe the coherence time can be further improved with optimized lattice quality, indicating $β$-GeS$_2$ as a promising host material for long-coherence-time spins.
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Submitted 24 October, 2024;
originally announced October 2024.
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Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
Authors:
N. -J. Guo,
W. Liu,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -A. Wang,
X. -D. Zeng,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
Y. -T. Wang,
J. -S. Tang,
C. -F. Li,
G. -C. Guo
Abstract:
Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed to have unique superiority in quantum sensing since their atomatic thickness. Here, we demonstrate that the negatively boron charged vacancy (V…
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Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed to have unique superiority in quantum sensing since their atomatic thickness. Here, we demonstrate that the negatively boron charged vacancy (V$ _\text{B}^{-} $) with good spin properties in hexagonal boron nitride can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of V$ _\text{B}^{-} $ defects, showing zero-filed splitting of $ \sim $ 3.47 GHz. We compare the photoluminescence intensity and spin properties of V$ _\text{B}^{-} $ defects generated by different implantation parameters, such as fluence, energy and ion species. With proper parameters, we can create V$ _\text{B}^{-} $ defects successfully with high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for integrated hBN-based devices.
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Submitted 14 January, 2022; v1 submitted 25 May, 2021;
originally announced May 2021.
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Coherent dynamics of multi-spin $\rm V_B^-$ centers in hexagonal boron nitride
Authors:
W. Liu,
V. Ivády,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -A. Wang,
N. -J. Guo,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
X. Liu,
Z. -Q. Zhou Y. Dong,
X. -D. Chen,
F. -W. Sun,
Y. -T. Wang,
J. -S. Tang,
A. Gali,
C. -F. Li,
G. -C. Guo
Abstract:
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillatio…
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Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related dynamical phenomena of the negatively charged boron vacancy ($\rm V_B^-$) spins in hBN. We report on different dynamics of the $\rm V_B^-$ spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting the multiple-frequency dynamical oscillation like clear beat in Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of $\rm V_B^-$ and reveal that the nuclear spins can be driven via the strong electric-nuclear coupling existing in $\rm V_B^-$ center, which can be modulated by the magnetic field and microwave field.
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Submitted 1 October, 2022; v1 submitted 27 January, 2021;
originally announced January 2021.
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Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride
Authors:
W. Liu,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -C. Li,
N. -J. Guo,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
Y. -T. Wang,
J. -S. Tang,
C. -F. Li,
G. -C. Guo
Abstract:
Two-dimensional hexagonal boron nitride (hBN) has attracted large attentions as platforms for realizations for integrated nanophotonics and collective effort has been focused on the spin defect centers. Here, the temperature dependence of the resonance spectrum in the range of 5-600 K is investigated. The zero-field splitting (ZFS) parameter D is found to decrease monotonicly with increasing tempe…
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Two-dimensional hexagonal boron nitride (hBN) has attracted large attentions as platforms for realizations for integrated nanophotonics and collective effort has been focused on the spin defect centers. Here, the temperature dependence of the resonance spectrum in the range of 5-600 K is investigated. The zero-field splitting (ZFS) parameter D is found to decrease monotonicly with increasing temperature and can be described by Varshni empirical equation perfectly, while E almost does not change. We systematically study the differences among different hBN nanopowders and provide an evidence of edge effects on ODMR of VB- defects. Considering the proportional relation between D and reciprocal of lattice volume, the thermal expansion might be the dominant reason for energy-level shifts. We also demonstrate that the VB- defects still exist stably at least at 600 K. Moreover, we propose a scheme for detecting laser intensity using the VB- defects in hBN nanopowders, which is based on the obvious dependence of its D value on laser intensity. Our results are helpful to gain insight into the spin properties of VB- and for the realizations of miniaturized, integrated thermal sensor.
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Submitted 23 September, 2021; v1 submitted 25 January, 2021;
originally announced January 2021.
