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High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform
Authors:
Y. Henry Wen,
David Heim,
Matthew Zimmermann,
Roman A. Shugayev,
Mark Dong,
Andrew J. Leenheer,
Gerald Gilbert,
Matt Eichenfield,
Mikkel Heuck,
Dirk R. Englund
Abstract:
Numerous applications in quantum and classical optics require scalable, high-speed modulators that cover visible-NIR wavelengths with low footprint, drive voltage (V) and power dissipation. A critical figure of merit for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators seek to maximize dT/dV by the selection of a high EO…
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Numerous applications in quantum and classical optics require scalable, high-speed modulators that cover visible-NIR wavelengths with low footprint, drive voltage (V) and power dissipation. A critical figure of merit for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators seek to maximize dT/dV by the selection of a high EO coefficient or a longer light-material interaction, but are ultimately limited by nonlinear material properties and material losses, respectively. Optical and RF resonances can improve dT/dV, but introduce added challenges in terms of speed and spectral tuning, especially for high-Q photonic cavity resonances. Here, we introduce a cavity-based EO modulator to solve both trade-offs in a piezo-strained photonic crystal cavity. Our approach concentrates the displacement of a piezo-electric actuator of length L and a given piezoelectric coefficient into the PhCC, resulting in dT/dV proportional to L under fixed material loss. Secondly, we employ a material deformation that is programmable under a "read-write" protocol with a continuous, repeatable tuning range of 5 GHz and a maximum non-volatile excursion of 8 GHz. In telecom-band demonstrations, we measure a fundamental mode linewidth = 5.4 GHz, with voltage response 177 MHz/V corresponding to 40 GHz for voltage spanning -120 to 120 V, 3dB-modulation bandwidth of 3.2 MHz broadband DC-AC, and 142 MHz for resonant operation near 2.8 GHz operation, optical extinction down to min(log(T)) = -25 dB via Michelson-type interference, and an energy consumption down to 0.17 nW/GHz. The strain-enhancement methods presented here are applicable to study and control other strain-sensitive systems.
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Submitted 13 October, 2023; v1 submitted 11 October, 2023;
originally announced October 2023.
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Nanoelectromechanical control of spin-photon interfaces in a hybrid quantum system on chip
Authors:
Genevieve Clark,
Hamza Raniwala,
Matthew Koppa,
Kevin Chen,
Andrew Leenheer,
Matthew Zimmermann,
Mark Dong,
Linsen Li,
Y. Henry Wen,
Daniel Dominguez,
Matthew Trusheim,
Gerald Gilbert,
Matt Eichenfield,
Dirk Englund
Abstract:
Atom-like defects or color centers (CC's) in nanostructured diamond are a leading platform for optically linked quantum technologies, with recent advances including memory-enhanced quantum communication, multi-node quantum networks, and spin-mediated generation of photonic cluster states. Scaling to practically useful applications motivates architectures meeting the following criteria: C1 individu…
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Atom-like defects or color centers (CC's) in nanostructured diamond are a leading platform for optically linked quantum technologies, with recent advances including memory-enhanced quantum communication, multi-node quantum networks, and spin-mediated generation of photonic cluster states. Scaling to practically useful applications motivates architectures meeting the following criteria: C1 individual optical addressing of spin qubits; C2 frequency tuning of CC spin-dependent optical transitions; C3 coherent spin control in CC ground states; C4 active photon routing; C5 scalable manufacturability; and C6 low on-chip power dissipation for cryogenic operations. However, no architecture meeting C1-C6 has thus far been demonstrated. Here, we introduce a hybrid quantum system-on-chip (HQ-SoC) architecture that simultaneously achieves C1-C6. Key to this advance is the realization of piezoelectric strain control of diamond waveguide-coupled tin vacancy centers to meet C2 and C3, with ultra-low power dissipation necessary for C6. The DC response of our device allows emitter transition tuning by over 20 GHz, while the large frequency range (exceeding 2 GHz) enables low-power AC control. We show acoustic manipulation of integrated tin vacancy spins and estimate single-phonon coupling rates over 1 kHz in the resolved sideband regime. Combined with high-speed optical routing with negligible static hold power, this HQ-SoC platform opens the path to scalable single-qubit control with optically mediated entangling gates.
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Submitted 14 August, 2023;
originally announced August 2023.
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Gaussian Optical Ising Machines
Authors:
William R. Clements,
Jelmer J. Renema,
Y. Henry Wen,
Helen M. Chrzanowski,
W. Steven Kolthammer,
Ian A. Walmsley
Abstract:
It has recently been shown that optical parametric oscillator (OPO) Ising machines, consisting of coupled optical pulses circulating in a cavity with parametric gain, can be used to probabilistically find low-energy states of Ising spin systems. In this work, we study optical Ising machines that operate under simplified Gaussian dynamics. We show that these dynamics are sufficient for reaching pro…
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It has recently been shown that optical parametric oscillator (OPO) Ising machines, consisting of coupled optical pulses circulating in a cavity with parametric gain, can be used to probabilistically find low-energy states of Ising spin systems. In this work, we study optical Ising machines that operate under simplified Gaussian dynamics. We show that these dynamics are sufficient for reaching probabilities of success comparable to previous work. Based on this result, we propose modified optical Ising machines with simpler designs that do not use parametric gain yet achieve similar performance, thus suggesting a route to building much larger systems.
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Submitted 20 June, 2017;
originally announced June 2017.
