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Time-bin entanglement at telecom wavelengths from a hybrid photonic integrated circuit
Authors:
Hannah Thiel,
Lennart Jehle,
Robert J. Chapman,
Stefan Frick,
Hauke Conradi,
Moritz Kleinert,
Holger Suchomel,
Martin Kamp,
Sven Höfling,
Christian Schneider,
Norbert Keil,
Gregor Weihs
Abstract:
Mass-deployable implementations for quantum communication require compact, reliable, and low-cost hardware solutions for photon generation, control and analysis. We present a fiber-pigtailed hybrid photonic circuit comprising nonlinear waveguides for photon-pair generation and a polymer interposer reaching 68dB of pump suppression and photon separation with >25dB polarization extinction ratio. The…
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Mass-deployable implementations for quantum communication require compact, reliable, and low-cost hardware solutions for photon generation, control and analysis. We present a fiber-pigtailed hybrid photonic circuit comprising nonlinear waveguides for photon-pair generation and a polymer interposer reaching 68dB of pump suppression and photon separation with >25dB polarization extinction ratio. The optical stability of the hybrid assembly enhances the quality of the entanglement, and the efficient background suppression and photon routing further reduce accidental coincidences. We thus achieve a 96(-8,+3)% concurrence and a 96(-5,+2)% fidelity to a Bell state. The generated telecom-wavelength, time-bin entangled photon pairs are ideally suited for distributing Bell pairs over fiber networks with low dispersion.
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Submitted 2 September, 2023;
originally announced September 2023.
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Difference-frequency generation in an AlGaAs Bragg-reflection waveguide using an on-chip electrically-pumped quantum dot laser
Authors:
A. Schlager,
M. Götsch,
R. J. Chapman,
S. Frick,
H. Thiel,
H. Suchomel,
M. Kamp,
S. Höfling,
C. Schneider,
G. Weihs
Abstract:
Nonlinear frequency conversion is ubiquitous in laser engineering and quantum information technology. A long-standing goal in photonics is to integrate on-chip semiconductor laser sources with nonlinear optical components. Engineering waveguide lasers with spectra that phase-match to nonlinear processes on the same device is a formidable challenge. Here, we demonstrate difference-frequency generat…
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Nonlinear frequency conversion is ubiquitous in laser engineering and quantum information technology. A long-standing goal in photonics is to integrate on-chip semiconductor laser sources with nonlinear optical components. Engineering waveguide lasers with spectra that phase-match to nonlinear processes on the same device is a formidable challenge. Here, we demonstrate difference-frequency generation in an AlGaAs Bragg reflection waveguide which incorporates the gain medium for the pump laser in its core. We include quantum dot layers in the AlGaAs waveguide that generate electrically driven laser light at ~790 nm, and engineer the structure to facilitate nonlinear processes at this wavelength. We perform difference-frequency generation between 1540 nm and 1630 nm using the on-chip laser, which is enabled by the broad modal phase-matching of the AlGaAs waveguide, and measure normalized conversion efficiencies up to $(0.64\pm0.21)$ %/W/cm$^2$. Our work demonstrates a pathway towards devices that utilize on-chip active elements and strong optical nonlinearities to enable highly integrated photonic systems-on-chip.
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Submitted 7 February, 2022; v1 submitted 20 January, 2021;
originally announced January 2021.
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Understanding photoluminescence in semiconductor Bragg-reflection waveguides: Towards an integrated, GHz-rate telecom photon pair source
Authors:
Silke Auchter,
Alexander Schlager,
Hannah Thiel,
Kaisa Laiho,
Benedikt Pressl,
Holger Suchomel,
Martin Kamp,
Sven Höfling,
Christian Schneider,
Gregor Weihs
Abstract:
Compared to traditional nonlinear optical crystals, like BaB$_2$O$_4$, KTiOPO$_4$ or LiNbO$_3$, semiconductor integrated sources of photon pairs may operate at pump wavelengths much closer to the bandgap of the materials. This is also the case for Bragg-reflection waveguides (BRW) targeting parametric down-conversion (PDC) to the telecom C-band. The large nonlinear coefficient of the AlGaAs alloy…
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Compared to traditional nonlinear optical crystals, like BaB$_2$O$_4$, KTiOPO$_4$ or LiNbO$_3$, semiconductor integrated sources of photon pairs may operate at pump wavelengths much closer to the bandgap of the materials. This is also the case for Bragg-reflection waveguides (BRW) targeting parametric down-conversion (PDC) to the telecom C-band. The large nonlinear coefficient of the AlGaAs alloy and the strong confinement of the light enable extremely bright integrated photon pair sources. However, under certain circumstances, a significant amount of detrimental broadband photoluminescence has been observed in BRWs. We show that this is mainly a result of linear absorption near the core and subsequent radiative recombination of electron-hole pairs at deep impurity levels in the semiconductor. For PDC with BRWs, we conclude that devices operating near the long wavelength end of the S-band or the short C-band require temporal filtering shorter than 1 ns. We predict that shifting the operating wavelengths to the L-band and making small adjustments in the material composition will reduce the amount of photoluminescence to negligible values. Such measures enable us to increase the average pump power and/or the repetition rate, which makes integrated photon pair sources with on-chip multi-gigahertz pair rates feasible.
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Submitted 12 October, 2020;
originally announced October 2020.
