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Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates
Authors:
Panaiot G. Zotev,
Sam A. Randerson,
Xuerong Hu,
Yue Wang,
Alexander I. Tartakovskii
Abstract:
Transition metal dichalcogenide (TMD) single photon emitters (SPEs) offer numerous advantages to quantum information applications, such as high single photon purity and deterministic positioning. Strain in the host monolayer, induced by underlying dielectric Mie resonators, is known to localize their formation to positions co-located with near-field photonic hotspots providing further control over…
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Transition metal dichalcogenide (TMD) single photon emitters (SPEs) offer numerous advantages to quantum information applications, such as high single photon purity and deterministic positioning. Strain in the host monolayer, induced by underlying dielectric Mie resonators, is known to localize their formation to positions co-located with near-field photonic hotspots providing further control over their optical properties. However, traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate resulting in losses of the emitted light and limited photonic enhancement. Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate due to the adhesive van der Waals forces, enabling high refractive index contrast or the use of highly reflective metallic surfaces. We demonstrate the localized formation of SPEs in WSe$_2$ monolayers transferred onto WS$_2$ NAs on both SiO$_2$ and Au substrates, enabling strong photonic enhancements and increased single photon collection. We provide evidence for enhanced quantum efficiencies (QE) reaching an average value of 43% (7%) for SPEs on WS$_2$ NAs on a SiO$_2$ (Au) substrate. We further combine the advantages offered by both dielectric and metallic substrates to numerically simulate an optimized NA geometry for maximum WSe$_2$ single photon excitation, emission, collection. Thus, the fluorescence is enhanced by a factor of over 4 orders of magnitude compared to vacuum and 5 orders of magnitude compared to a flat SiO$_2$/Si surface. Our work showcases the advantages offered by employing TMD material nanoresonators on various substrates for SPE formation and photonic enhancement.
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Submitted 2 August, 2024;
originally announced August 2024.
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Van der Waals Materials for Applications in Nanophotonics
Authors:
Panaiot G. Zotev,
Yue Wang,
Daniel Andres-Penares,
Toby Severs Millard,
Sam Randerson,
Xuerong Hu,
Luca Sortino,
Charalambos Louca,
Mauro Brotons-Gisbert,
Tahiyat Huq,
Stefano Vezzoli,
Riccardo Sapienza,
Thomas F. Krauss,
Brian Gerardot,
Alexander I. Tartakovskii
Abstract:
Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v…
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Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.
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Submitted 31 October, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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Highly nonlinear trion-polaritons in a monolayer semiconductor
Authors:
R. P. A. Emmanuele,
M. Sich,
O. Kyriienko,
V. Shahnazaryan,
F. Withers,
A. Catanzaro,
P. M. Walker,
F. A. Benimetskiy,
M. S. Skolnick,
A. I. Tartakovskii,
I. A. Shelykh,
D. N. Krizhanovskii
Abstract:
Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting tran…
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Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting transition metal dichalcogenides (TMDCs). By hybridising trions in monolayer MoSe$_2$ at low electron densities with a microcavity mode, we realise trion-polaritons exhibiting significant energy shifts at very small photon fluxes due to phase space filling. Most notably, the strong trion-polariton nonlinearity is found to be 10 to 1000 larger than in other polariton systems, including neutral exciton-polaritons in TMDCs. Furthermore it exceeds by factors of $\sim 10^3-10^5$ the magnitude of Kerr nonlinearity in bare TMDCs, graphene and other widely used optical materials (e.g. Si, AlGaAs etc) in weak light-matter coupling regimes. The results are in good agreement with a theory which accounts for the composite nature of excitons and trions and deviation of their statistics from that of ideal bosons and fermions. This work opens a new highly nonlinear system for quantum optics applications enabling in principle scalability and control through nano-engineering of van der Waals heterostructures.
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Submitted 31 October, 2019;
originally announced October 2019.
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Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
Authors:
Evgeny M. Alexeev,
David A. Ruiz-Tijerina,
Mark Danovich,
Matthew J. Hamer,
Daniel J. Terry,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Maciej R. Molas,
Maciej Koperski,
Kenji Watanabe,
Takashi Taniguchi,
Kostya S. Novoselov,
Roman V. Gorbachev,
Hyeon Suk Shin,
Vladimir I. Fal'ko,
Alexander I. Tartakovskii
Abstract:
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu…
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Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.
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Submitted 12 April, 2019;
originally announced April 2019.
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All-optical formation of coherent dark states of silicon-vacancy spins in diamond
Authors:
Benjamin Pingault,
Jonas N. Becker,
Carsten H. H. Schulte,
Carsten Arend,
Christian Hepp,
Tillmann Godde,
Alexander I. Tartakovskii,
Matthew Markham,
Christoph Becher,
Mete Atature
Abstract:
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum.…
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Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.
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Submitted 14 September, 2014;
originally announced September 2014.
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Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information
Authors:
Ceyhun Bulutay,
E. A. Chekhovich,
A. I. Tartakovskii
Abstract:
A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational s…
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A wealth of atomistic information is contained within a self-assembled quantum dot (QD), associated with its chemical composition and the growth history. In the presence of quadrupolar nuclei, as in InGaAs QDs, much of this is inherited to nuclear spins via the coupling between the strain within the polar lattice and the electric quadrupole moments of the nuclei. Here, we present a computational study of the recently introduced inverse spectra nuclear magnetic resonance technique to assess its suitability for extracting such structural information. We observe marked spectral differences between the compound InAs and alloy InGaAs QDs. These are linked to the local biaxial and shear strains, and the local bonding configurations. The cation-alloying plays a crucial role especially for the arsenic nuclei. The isotopic line profiles also largely differ among nuclear species: While the central transition of the gallium isotopes have a narrow linewidth, those of arsenic and indium are much broader and oppositely skewed with respect to each other. The statistical distributions of electric field gradient (EFG) parameters of the nuclei within the QD are analyzed. The consequences of various EFG axial orientation characteristics are discussed. Finally, the possibility of suppressing the first-order quadrupolar shifts is demonstrated by simply tilting the sample with respect to the static magnetic field.
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Submitted 20 November, 2014; v1 submitted 2 August, 2014;
originally announced August 2014.
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Voltage controlled nuclear polarization switching in a single InGaAs quantum dot
Authors:
M. N. Makhonin,
J. Skiba-Szymanska,
M. S. Skolnick,
H. -Y. Liu,
M. Hopkinson,
A. I. Tartakovskii
Abstract:
Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 Tesla. The bias-dependent photoluminescence measurements reveal the importa…
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Sharp threshold-like transitions between two stable nuclear spin polarizations are observed in optically pumped individual InGaAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 Tesla. The bias-dependent photoluminescence measurements reveal the importance of the electron-tunneling-assisted nuclear spin pumping. We also find evidence for the resonant LO-phonon-mediated electron co-tunneling, the effect controlled by the applied bias and leading to the reduction of the nuclear spin pumping rate.
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Submitted 15 January, 2009;
originally announced January 2009.
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Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe
Authors:
A. E. Nikolaenko,
E. A. Chekhovich,
M. N. Makhonin,
I. W. Drouzas,
A. B. Vankov,
J. Skiba-Szymanska,
M. S. Skolnick,
P. Senellart,
A. Lemaitre,
A. I. Tartakovskii
Abstract:
Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied mag…
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Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.
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Submitted 15 January, 2009;
originally announced January 2009.
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Inversion of exciton level splitting in quantum dots
Authors:
R. J. Young,
R. M. Stevenson,
A. J. Shields,
P. Atkinson,
K. Cooper,
D. A. Ritchie,
K. M. Groom,
A. I. Tartakovskii,
M. S. Skolnick
Abstract:
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown t…
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The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Thermal annealing is shown to reduce the exciton confinement, thereby increasing the number of dots with splitting close to zero.
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Submitted 30 January, 2006;
originally announced January 2006.
