Showing 1–2 of 2 results for author: Tariq, B
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Approaches to Constrained Quantum Approximate Optimization
Authors:
Zain H. Saleem,
Teague Tomesh,
Bilal Tariq,
Martin Suchara
Abstract:
We study the costs and benefits of different quantum approaches to finding approximate solutions of constrained combinatorial optimization problems with a focus on Maximum Independent Set. In the Lagrange multiplier approach we analyze the dependence of the output on graph density and circuit depth. The Quantum Alternating Ansatz Approach is then analyzed and we examine the dependence on different…
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We study the costs and benefits of different quantum approaches to finding approximate solutions of constrained combinatorial optimization problems with a focus on Maximum Independent Set. In the Lagrange multiplier approach we analyze the dependence of the output on graph density and circuit depth. The Quantum Alternating Ansatz Approach is then analyzed and we examine the dependence on different choices of initial states. The Quantum Alternating Ansatz Approach, although powerful, is expensive in terms of quantum resources. A new algorithm based on a "Dynamic Quantum Variational Ansatz" (DQVA) is proposed that dynamically changes to ensure the maximum utilization of a fixed allocation of quantum resources. Our analysis and the new proposed algorithm can also be generalized to other related constrained combinatorial optimization problems.
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Submitted 7 July, 2021; v1 submitted 13 October, 2020;
originally announced October 2020.
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Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
Authors:
Bilal Tariq,
Xuedong Hu
Abstract:
Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its suitability for applications in quantum information processing. In this paper we study the effect of interface steps on the magnitude and phase of valley-orbit coupling for an electron in a silicon quantum dot. Within the effective mass approximation, we find that the location of a step on the interface is import…
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Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its suitability for applications in quantum information processing. In this paper we study the effect of interface steps on the magnitude and phase of valley-orbit coupling for an electron in a silicon quantum dot. Within the effective mass approximation, we find that the location of a step on the interface is important in determining both the magnitude and the phase of the valley-orbit coupling in a Si/SiGe quantum dot. Specifically, our numerical results show that the magnitude of valley orbit coupling can be suppressed up to 75\% by a step of one atomic monolayer, and its phase can change by almost $π$. When two steps are present, the minimum value of the valley-orbit coupling can even approach zero. We also clarify the effects of an applied external magnetic field and the higher orbital states on the valley-orbit coupling. Overall, our results illustrate how interface roughness affect the valley-orbit coupling in silicon, and how spin qubits in silicon may be affected.
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Submitted 26 April, 2019;
originally announced April 2019.
