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Slit-loaded coplanar waveguide for color-center spin qubits
Authors:
Haruko Toyama,
Kosuke Tahara,
Taro Ikeda,
Hiroya Tanaka,
Atsushi Miura,
Shin-ichi Tamura,
Maria Emma Villamin,
Toshinori Numata,
Naotaka Iwata,
Yuichi Yamazaki,
Takeshi Ohshima,
Katsuhiro Kutsuki,
Hideo Iizuka
Abstract:
The spin qubits of color centers are extensively investigated for quantum sensing, communication, and information processing, with their states generally controlled using lasers and microwaves. However, it is challenging to effectively irradiate both lasers and microwaves onto color centers using small footprint microwave waveguides or antennas that are compatible with semiconductor devices. We ex…
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The spin qubits of color centers are extensively investigated for quantum sensing, communication, and information processing, with their states generally controlled using lasers and microwaves. However, it is challenging to effectively irradiate both lasers and microwaves onto color centers using small footprint microwave waveguides or antennas that are compatible with semiconductor devices. We experimentally show that by introducing a compact coplanar waveguide with a thin slit in its signal line, effective irradiation of both lasers and microwaves is enabled, allowing spin-state control of color centers created around the slit. Microwave magnetic fields parallel to the surface, intrinsically generated by a standard coplanar waveguide, persist even after loading the slit, which is necessary to control the color centers whose spin quantization axes are oriented perpendicular to the surface, while laser light for the initialization and readout of spin states can access the color centers through the slit. Continuous and pulsed optically detected magnetic resonance measurements are performed for the silicon vacancies ($\mathrm{V_{Si}}$) in silicon carbide 4H-SiC(0001). Experimental results indicate that the spin states of $\mathrm{V_{Si}}$ are effectively controlled by the microwave magnetic fields parallel to the surface, which agrees with numerical results from electromagnetic field simulations. Our small footprint waveguide is suitable for integrating color-center-based quantum sensors into semiconductor electronic devices and other small-scale systems.
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Submitted 19 June, 2025;
originally announced June 2025.
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Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
Authors:
Kosuke Tahara,
Shin-ichi Tamura,
Haruko Toyama,
Jotaro J. Nakane,
Katsuhiro Kutsuki,
Yuichi Yamazaki,
Takeshi Ohshima
Abstract:
The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin-$\frac{3}{2}$ electronic state. However, optical spin initialization and readout are less efficient compared to those of spin-1 systems, such as nitrogen-vacancy centers in diamond, under non-resonant optical excitation. Spin-dependent fluorescence exhibits contrast only betw…
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The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin-$\frac{3}{2}$ electronic state. However, optical spin initialization and readout are less efficient compared to those of spin-1 systems, such as nitrogen-vacancy centers in diamond, under non-resonant optical excitation. Spin-dependent fluorescence exhibits contrast only between $|m=\pm 3/2\rangle$ and $|m=\pm 1/2\rangle$ states, and optical pumping does not create a population difference between $|+1/2\rangle$ and $|-1/2\rangle$ states. Thus, operating one qubit (e.g., $\left\{|+3/2\rangle, |+1/2\rangle \right\}$ states) leaves the population in the remaining state ($|-1/2\rangle$) unaffected, contributing to background in optical readout. To mitigate this problem, we propose a sensing scheme based on duplex qubit operation in the quartet, using microwave pulses with two resonant frequencies to simultaneously operate $\left\{ |+3/2\rangle, |+1/2\rangle \right\}$ and $\left\{ |-1/2\rangle, |-3/2\rangle \right\}$. Experimental results demonstrate that this approach doubles signal contrast in optical readout and improves sensitivity in AC magnetometry compared to simplex operation.
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Submitted 5 April, 2025; v1 submitted 15 November, 2024;
originally announced November 2024.
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Perfectly Aligned Shallow Ensemble Nitrogen-Vacancy Centers in (111) Diamond
Authors:
Hitoshi Ishiwata,
Makoto Nakajima,
Kosuke Tahara,
Hayato Ozawa,
Takayuki Iwasaki,
Mutsuko Hatano
Abstract:
We report the formation of perfectly aligned, high-density, shallow nitrogen vacancy (NV) centers on the ($111$) surface of a diamond. The study involved step-flow growth with a high flux of nitrogen during chemical vapor deposition (CVD) growth, which resulted in the formation of a highly concentrated (>$10^{19}$ cm$^{-3}$) nitrogen layer approximately $10$ nm away from the substrate surface. Pho…
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We report the formation of perfectly aligned, high-density, shallow nitrogen vacancy (NV) centers on the ($111$) surface of a diamond. The study involved step-flow growth with a high flux of nitrogen during chemical vapor deposition (CVD) growth, which resulted in the formation of a highly concentrated (>$10^{19}$ cm$^{-3}$) nitrogen layer approximately $10$ nm away from the substrate surface. Photon counts obtained from the NV centers indicated the presence of $6.1$x$10^{15}$-$3.1$x$10^{16}$ cm$^{-3}$ NV centers, which suggested the formation of an ensemble of NV centers. The optically detected magnetic resonance (ODMR) spectrum confirmed perfect alignment (more than $99$ %) for all the samples fabricated by step-flow growth via CVD. Perfectly aligned shallow ensemble NV centers indicated a high Rabi contrast of approximately $30$ % which is comparable to the values reported for a single NV center. Nanoscale NMR demonstrated surface-sensitive nuclear spin detection and provided a confirmation of the NV centers depth. Single NV center approximation indicated that the depth of the NV centers was approximately $9$-$10.7$ nm from the surface with error of less than $\pm$$0.8$ nm. Thus, a route for material control of shallow NV centers has been developed by step-flow growth using a CVD system. Our finding pioneers on the atomic level control of NV center alignment for large area quantum magnetometry.
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Submitted 3 September, 2017; v1 submitted 12 April, 2017;
originally announced April 2017.
