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Scatter-Gather DMA Performance Analysis within an SoC-based Control System for Trapped-Ion Quantum Computing
Authors:
Tiamike Dudley,
Jim Plusquellic,
Eirini Eleni Tsiropoulou,
Joshua Goldberg,
Daniel Stick,
Daniel Lobser
Abstract:
Scatter-gather dynamic-memory-access (SG-DMA) is utilized in applications that require high bandwidth and low latency data transfers between memory and peripherals, where data blocks, described using buffer descriptors (BDs), are distributed throughout the memory system. The data transfer organization and requirements of a Trapped-Ion Quantum Computer (TIQC) possess characteristics similar to thos…
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Scatter-gather dynamic-memory-access (SG-DMA) is utilized in applications that require high bandwidth and low latency data transfers between memory and peripherals, where data blocks, described using buffer descriptors (BDs), are distributed throughout the memory system. The data transfer organization and requirements of a Trapped-Ion Quantum Computer (TIQC) possess characteristics similar to those targeted by SG-DMA. In particular, the ion qubits in a TIQC are manipulated by applying control sequences consisting primarily of modulated laser pulses. These optical pulses are defined by parameters that are (re)configured by the electrical control system. Variations in the operating environment and equipment make it necessary to create and run a wide range of control sequence permutations, which can be well represented as BD regions distributed across the main memory. In this paper, we experimentally evaluate the latency and throughput of SG-DMA on Xilinx radiofrequency SoC (RFSoC) devices under a variety of BD and payload sizes as a means of determining the benefits and limitations of an RFSoC system architecture for TIQC applications.
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Submitted 16 April, 2024;
originally announced April 2024.
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Multi-junction surface ion trap for quantum computing
Authors:
J. D. Sterk,
M. G. Blain,
M. Delaney,
R. Haltli,
E. Heller,
A. L. Holterhoff,
T. Jennings,
N. Jimenez,
A. Kozhanov,
Z. Meinelt,
E. Ou,
J. Van Der Wall,
C. Noel,
D. Stick
Abstract:
Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport,…
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Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport, and ion control and detection with integrated photonics. Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size. By raising the RF electrode and removing most of the insulating dielectric layer below it we reduce both ohmic and dielectric power dissipation. We also measure heating rates across a range of motional frequencies and for different voltage sources in a trap with a raised RF electrode but solid dielectric.
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Submitted 29 February, 2024;
originally announced March 2024.
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Integrated photonic structures for photon-mediated entanglement of trapped ions
Authors:
F. W. Knollmann,
E. Clements,
P. T. Callahan,
M. Gehl,
J. D. Hunker,
T. Mahony,
R. McConnell,
R. Swint,
C. Sorace-Agaskar,
I. L. Chuang,
J. Chiaverini,
D. Stick
Abstract:
Trapped atomic ions are natural candidates for quantum information processing and have the potential to realize or improve quantum computing, sensing, and networking. These applications often require the collection of individual photons emitted from ions into guided optical modes, in some cases for the production of entanglement between separated ions. Proof-of-principle demonstrations of such pho…
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Trapped atomic ions are natural candidates for quantum information processing and have the potential to realize or improve quantum computing, sensing, and networking. These applications often require the collection of individual photons emitted from ions into guided optical modes, in some cases for the production of entanglement between separated ions. Proof-of-principle demonstrations of such photon collection from trapped ions have been performed using high-numerical-aperture lenses or cavities and single-mode fibers, but integrated photonic elements in ion-trap structures offer advantages in scalability and manufacturabilty over traditional optics. In this paper we analyze structures monolithically fabricated with an ion trap for collecting ion-emitted photons, coupling them into waveguides, and manipulating them via interference. We calculate geometric limitations on collection efficiency for this scheme, simulate a single-layer grating that shows performance comparable to demonstrated free-space optics, and discuss practical fabrication and fidelity considerations. Based on this analysis, we conclude that integrated photonics can support scalable systems of trapped-ions that can distribute quantum information via photon-mediated entanglement.
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Submitted 8 October, 2024; v1 submitted 12 January, 2024;
originally announced January 2024.
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Bilayer Ion Trap Design for 2D Arrays
Authors:
Gavin N. Nop,
Jonathan D. H. Smith,
Daniel Stick,
Durga Paudyal
Abstract:
Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead rou…
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Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. In this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
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Submitted 9 May, 2024; v1 submitted 11 October, 2023;
originally announced October 2023.
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Multi-site Integrated Optical Addressing of Trapped Ions
Authors:
Joonhyuk Kwon,
William J. Setzer,
Michael Gehl,
Nicholas Karl,
Jay Van Der Wall,
Ryan Law,
Matthew G. Blain,
Daniel Stick,
Hayden J. McGuinness
Abstract:
One of the most effective ways to advance the performance of quantum computers and quantum sensors is to increase the number of qubits or quantum resources in the system. A major technical challenge that must be solved to realize this goal for trapped-ion systems is scaling the delivery of optical signals to many individual ions. In this paper we demonstrate an approach employing waveguides and mu…
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One of the most effective ways to advance the performance of quantum computers and quantum sensors is to increase the number of qubits or quantum resources in the system. A major technical challenge that must be solved to realize this goal for trapped-ion systems is scaling the delivery of optical signals to many individual ions. In this paper we demonstrate an approach employing waveguides and multi-mode interferometer splitters to optically address multiple $^{171}\textrm{Yb}^+$ ions in a surface trap by delivering all wavelengths required for full qubit control. Measurements of hyperfine spectra and Rabi flopping were performed on the E2 clock transition, using integrated waveguides for delivering the light needed for Doppler cooling, state preparation, coherent operations, and detection. We describe the use of splitters to address multiple ions using a single optical input per wavelength and use them to demonstrate simultaneous Rabi flopping on two different transitions occurring at distinct trap sites. This work represents an important step towards the realization of scalable integrated photonics for atomic clocks and trapped-ion quantum information systems.
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Submitted 28 March, 2024; v1 submitted 28 August, 2023;
originally announced August 2023.
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JaqalPaw: A Guide to Defining Pulses and Waveforms for Jaqal
Authors:
Daniel Lobser,
Joshua Goldberg,
Andrew J. Landahl,
Peter Maunz,
Benjamin C. A. Morrison,
Kenneth Rudinger,
Antonio Russo,
Brandon Ruzic,
Daniel Stick,
Jay Van Der Wall,
Susan M. Clark
Abstract:
One of the many challenges of developing an open user testbed such as QSCOUT is providing an interface that maintains simplicity without compromising expressibility or control. This interface comprises two distinct elements: a quantum assembly language designed for specifying quantum circuits at the gate level, and a low-level counterpart used for describing gates in terms of waveforms that realiz…
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One of the many challenges of developing an open user testbed such as QSCOUT is providing an interface that maintains simplicity without compromising expressibility or control. This interface comprises two distinct elements: a quantum assembly language designed for specifying quantum circuits at the gate level, and a low-level counterpart used for describing gates in terms of waveforms that realize specific quantum operations. Jaqal, or "Just another quantum assembly language," is the language used in QSCOUT for gate-level descriptions of quantum circuits. JaqalPaw, or "Jaqal pulses and waveforms," is its pulse-level counterpart. This document concerns the latter, and presents a description of the tools needed for precisely defining the underlying waveforms associated with a gate primitive.
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Submitted 3 May, 2023;
originally announced May 2023.
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High-fidelity trapped-ion qubit operations with scalable photonic modulators
Authors:
Craig W. Hogle,
Daniel Dominguez,
Mark Dong,
Andrew Leenheer,
Hayden J. McGuinness,
Brandon P. Ruzic,
Matt Eichenfield,
Daniel Stick
Abstract:
Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturiz…
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Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.
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Submitted 24 August, 2023; v1 submitted 25 October, 2022;
originally announced October 2022.
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Design and analysis of digital communication within an SoC-based control system for trapped-ion quantum computing
Authors:
Nafis Irtija,
Jim Plusquellic,
Eirini Eleni Tsiropoulou,
Joshua Goldberg,
Daniel Lobser,
Daniel Stick
Abstract:
Electronic control systems used for quantum computing have become increasingly complex as multiple qubit technologies employ larger numbers of qubits with higher fidelity targets. Whereas the control systems for different technologies share some similarities, parameters like pulse duration, throughput, real-time feedback, and latency requirements vary widely depending on the qubit type. In this pa…
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Electronic control systems used for quantum computing have become increasingly complex as multiple qubit technologies employ larger numbers of qubits with higher fidelity targets. Whereas the control systems for different technologies share some similarities, parameters like pulse duration, throughput, real-time feedback, and latency requirements vary widely depending on the qubit type. In this paper, we evaluate the performance of modern System-on-Chip (SoC) architectures in meeting the control demands associated with performing quantum gates on trapped-ion qubits, particularly focusing on communication within the SoC. A principal focus of this paper is the data transfer latency and throughput of several high-speed on-chip mechanisms on Xilinx multi-processor SoCs, including those that utilize direct memory access (DMA). They are measured and evaluated to determine an upper bound on the time required to reconfigure a gate parameter. Worst-case and average-case bandwidth requirements for a custom gate sequencer core are compared with the experimental results. The lowest-variability, highest-throughput data-transfer mechanism is DMA between the real-time processing unit (RPU) and the PL, where bandwidths up to 19.2 GB/s are possible. For context, this enables reconfiguration of qubit gates in less than 2$μ$s, comparable to the fastest gate time. Though this paper focuses on trapped-ion control systems, the gate abstraction scheme and measured communication rates are applicable to a broad range of quantum computing technologies.
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Submitted 19 January, 2023; v1 submitted 30 September, 2022;
originally announced September 2022.
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Closed-loop optimization of fast trapped-ion shuttling with sub-quanta excitation
Authors:
Jonathan D. Sterk,
Henry Coakley,
Joshua Goldberg,
Vincent Hietala,
Jason Lechtenberg,
Hayden McGuinness,
Daniel McMurtrey,
L. Paul Parazzoli,
Jay Van Der Wall,
Daniel Stick
Abstract:
Shuttling ions at high speed and with low motional excitation is essential for realizing fast and high-fidelity algorithms in many trapped-ion based quantum computing architectures. Achieving such performance is challenging due to the sensitivity of an ion to electric fields and the unknown and imperfect environmental and control variables that create them. Here we implement a closed-loop optimiza…
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Shuttling ions at high speed and with low motional excitation is essential for realizing fast and high-fidelity algorithms in many trapped-ion based quantum computing architectures. Achieving such performance is challenging due to the sensitivity of an ion to electric fields and the unknown and imperfect environmental and control variables that create them. Here we implement a closed-loop optimization of the voltage waveforms that control the trajectory and axial frequency of an ion during transport in order to minimize the final motional excitation. The resulting waveforms realize fast round-trip transport of a trapped ion across multiple electrodes at speeds of $0.5$ electrodes/$μ$s ($35 \text{m/s}$) with a maximum of $0.36\pm0.08$ quanta gain. This sub-quanta gain is independent of the phase of the secular motion at the distal location, obviating the need for an electric field impulse or time delay to eliminate the coherent motion
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Submitted 18 January, 2022;
originally announced January 2022.
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Entangling-gate error from coherently displaced motional modes of trapped ions
Authors:
B. P. Ruzic,
T. A. Barrick,
J. D. Hunker,
R. J. Law,
B. K. McFarland,
H. M. McGuinness,
L. P. Parazzoli,
J. D. Sterk,
J. W. Van Der Wall,
D. Stick
Abstract:
Entangling gates in trapped-ion quantum computing have primarily targeted stationary ions with initial motional distributions that are thermal and close to the ground state. However, future systems will likely incur significant non-thermal excitation due to, e.g., ion transport, longer operational times, and increased spatial extent of the trap array. In this paper, we analyze the impact of such c…
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Entangling gates in trapped-ion quantum computing have primarily targeted stationary ions with initial motional distributions that are thermal and close to the ground state. However, future systems will likely incur significant non-thermal excitation due to, e.g., ion transport, longer operational times, and increased spatial extent of the trap array. In this paper, we analyze the impact of such coherent motional excitation on entangling-gate error by performing simulations of Molmer-Sorenson (MS) gates on a pair of trapped-ion qubits with both thermal and coherent excitation present in a shared motional mode at the start of the gate. We discover that a small amount of coherent displacement dramatically erodes gate performance in the presence of experimental noise, and we demonstrate that applying only limited control over the phase of the displacement can suppress this error. We then use experimental data from transported ions to analyze the impact of coherent displacement on MS-gate error under realistic conditions.
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Submitted 10 September, 2021; v1 submitted 9 September, 2021;
originally announced September 2021.
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Fluorescence Detection of a Trapped Ion with a Monolithically Integrated Single-Photon-Counting Avalanche Diode
Authors:
W. J. Setzer,
M. Ivory,
O. Slobodyan,
J. W. Van Der Wall,
L. P. Parazzoli,
D. Stick,
M. Gehl,
M. Blain,
R. R. Kay,
H. J. McGuinness
Abstract:
We report on the first demonstration of fluorescence detection using single-photon avalanche photodiodes (SPADs) monolithically integrated with a microfabricated surface ion trap. The SPADs are positioned below the trapping positions of the ions, and designed to detect 370 nm photons emitted from single $^{174}$Yb$^+$ and $^{171}$Yb$^+$ ions. We achieve an ion/no-ion detection fidelity for…
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We report on the first demonstration of fluorescence detection using single-photon avalanche photodiodes (SPADs) monolithically integrated with a microfabricated surface ion trap. The SPADs are positioned below the trapping positions of the ions, and designed to detect 370 nm photons emitted from single $^{174}$Yb$^+$ and $^{171}$Yb$^+$ ions. We achieve an ion/no-ion detection fidelity for $^{174}$Yb$^+$ of 0.99 with an average detection window of 7.7(1) ms. We report a dark count rate as low as 1.2 kHz at room temperature operation. The fidelity is limited by laser scatter, dark counts, and heating that prevents holding the ion directly above the SPAD. We measure count rates from each of the contributing sources and fluorescence as a function of ion position. Based on the active detector area and using the ion as a calibrated light source we estimate a SPAD quantum efficiency of 24$\pm$1%.
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Submitted 6 July, 2021; v1 submitted 3 May, 2021;
originally announced May 2021.
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Engineering the Quantum Scientific Computing Open User Testbed (QSCOUT): Design details and user guide
Authors:
Susan M. Clark,
Daniel Lobser,
Melissa Revelle,
Christopher G. Yale,
David Bossert,
Ashlyn D. Burch,
Matthew N. Chow,
Craig W. Hogle,
Megan Ivory,
Jessica Pehr,
Bradley Salzbrenner,
Daniel Stick,
William Sweatt,
Joshua M. Wilson,
Edward Winrow,
Peter Maunz
Abstract:
The Quantum Scientific Computing Open User Testbed (QSCOUT) at Sandia National Laboratories is a trapped-ion qubit system designed to evaluate the potential of near-term quantum hardware in scientific computing applications for the US Department of Energy (DOE) and its Advanced Scientific Computing Research (ASCR) program. Similar to commercially available platforms, most of which are based on sup…
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The Quantum Scientific Computing Open User Testbed (QSCOUT) at Sandia National Laboratories is a trapped-ion qubit system designed to evaluate the potential of near-term quantum hardware in scientific computing applications for the US Department of Energy (DOE) and its Advanced Scientific Computing Research (ASCR) program. Similar to commercially available platforms, most of which are based on superconducting qubits, it offers quantum hardware that researchers can use to perform quantum algorithms, investigate noise properties unique to quantum systems, and test novel ideas that will be useful for larger and more powerful systems in the future. However, unlike most other quantum computing testbeds, QSCOUT uses trapped $^{171}$Yb$^{+}$ ions as the qubits, provides full connectivity between qubits, and allows both quantum circuit and low-level pulse control access to study new modes of programming and optimization. The purpose of this manuscript is to provide users and the general community with details of the QSCOUT hardware and its interface, enabling them to take maximum advantage of its capabilities.
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Submitted 1 April, 2021;
originally announced April 2021.
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Integrated optical addressing of a trapped ytterbium ion
Authors:
M. Ivory,
W. J. Setzer,
N. Karl,
H. McGuinness,
C. DeRose,
M. Blain,
D. Stick,
M. Gehl,
L. P. Parazzoli
Abstract:
We report on the characterization of heating rates and photo-induced electric charging on a microfabricated surface ion trap with integrated waveguides. Microfabricated surface ion traps have received considerable attention as a quantum information platform due to their scalability and manufacturability. Here we characterize the delivery of 435 nm light through waveguides and diffractive couplers…
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We report on the characterization of heating rates and photo-induced electric charging on a microfabricated surface ion trap with integrated waveguides. Microfabricated surface ion traps have received considerable attention as a quantum information platform due to their scalability and manufacturability. Here we characterize the delivery of 435 nm light through waveguides and diffractive couplers to a single ytterbium ion in a compact trap. We measure an axial heating rate at room temperature of $0.78\pm0.05$ q/ms and see no increase due to the presence of the waveguide. Furthermore, the electric field due to charging of the exposed dielectric outcoupler settles under normal operation after an initial shift. The frequency instability after settling is measured to be 0.9 kHz.
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Submitted 27 April, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Assembling a ring-shaped crystal in a microfabricated surface ion trap
Authors:
Boyan Tabakov,
Francisco Benito,
Matthew Blain,
Craig R. Clark,
Susan Clark,
Raymond A. Haltli,
Peter Maunz,
Jonathan D. Sterk,
Chris Tigges,
Daniel Stick
Abstract:
We report on experiments with a microfabricated surface trap designed for trapping a chain of ions in a ring. Uniform ion separation over most of the ring is achieved with a rotationally symmetric design and by measuring and suppressing undesired electric fields. After minimizing these fields the ions are confined primarily by an rf trapping pseudo-potential and their mutual Coulomb repulsion. The…
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We report on experiments with a microfabricated surface trap designed for trapping a chain of ions in a ring. Uniform ion separation over most of the ring is achieved with a rotationally symmetric design and by measuring and suppressing undesired electric fields. After minimizing these fields the ions are confined primarily by an rf trapping pseudo-potential and their mutual Coulomb repulsion. The ring-shaped crystal consists of approximately 400 Ca$^+$ ions with an estimated average separation of 9 $μm$.
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Submitted 26 January, 2015;
originally announced January 2015.
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Heating and ion transport in a Y-junction surface-electrode trap
Authors:
G. Shu,
G. Vittorini,
C. Volin,
A. Buikema,
C. S. Nichols,
D. Stick,
Kenneth R. Brown
Abstract:
We measure ion heating following transport throughout a Y-junction surface-electrode ion trap. By carefully selecting the trap voltage update rate during adiabatic transport along a trap arm, we observe minimal heating relative to the anomalous heating background. Transport through the junction results in an induced heating between 37 and 150 quanta in the axial direction per traverse. To reliably…
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We measure ion heating following transport throughout a Y-junction surface-electrode ion trap. By carefully selecting the trap voltage update rate during adiabatic transport along a trap arm, we observe minimal heating relative to the anomalous heating background. Transport through the junction results in an induced heating between 37 and 150 quanta in the axial direction per traverse. To reliably measure heating in this range, we compare the experimental sideband envelope, including up to fourth-order sidebands, to a theoretical model. The sideband envelope method allows us to cover the intermediate heating range inaccessible to the first-order sideband and Doppler recooling methods. We conclude that quantum information processing in this ion trap will likely require sympathetic cooling in order to support high fidelity gates after junction transport.
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Submitted 19 March, 2014;
originally announced March 2014.
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Single qubit manipulation in a microfabricated surface electrode ion trap
Authors:
Emily Mount,
So-Young Baek,
Matthew Blain,
Daniel Stick,
Daniel Gaultney,
Stephen Crain,
Rachel Noek,
Taehyun Kim,
Peter Maunz,
Jungsang Kim
Abstract:
We trap individual $^{171}$Yb$^+$ ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8(0.1) quanta/ms indicate stable trapping conditions in these microtraps. A coherence time of more than one second, h…
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We trap individual $^{171}$Yb$^+$ ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8(0.1) quanta/ms indicate stable trapping conditions in these microtraps. A coherence time of more than one second, high fidelity qubit state detection and single qubit rotations are demonstrated.
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Submitted 9 August, 2013; v1 submitted 5 June, 2013;
originally announced June 2013.
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Characterization of fluorescence collection optics integrated with a micro-fabricated surface electrode ion trap
Authors:
Craig R. Clark,
Chin-wen Chou,
A. R. Ellis,
Jeff Hunker,
Shanalyn A. Kemme,
Peter Maunz,
Boyan Tabakov,
Chris Tigges,
Daniel L. Stick
Abstract:
One of the outstanding challenges for ion trap quantum information processing is to accurately detect the states of many ions in a scalable fashion. In the particular case of surface traps, geometric constraints make imaging perpendicular to the surface appealing for light collection at multiple locations with minimal cross-talk. In this report we describe an experiment integrating Diffractive Opt…
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One of the outstanding challenges for ion trap quantum information processing is to accurately detect the states of many ions in a scalable fashion. In the particular case of surface traps, geometric constraints make imaging perpendicular to the surface appealing for light collection at multiple locations with minimal cross-talk. In this report we describe an experiment integrating Diffractive Optic Elements (DOE's) with surface electrode traps, connected through in-vacuum multi-mode fibers. The square DOE's reported here were all designed with solid angle collection efficiencies of 3.58%; with all losses included a detection efficiency of 0.388% (1.02% excluding the PMT loss) was measured with a single Ca+ ion. The presence of the DOE had minimal effect on the stability of the ion, both in temporal variation of stray electric fields and in motional heating rates.
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Submitted 21 May, 2013;
originally announced May 2013.
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Heating rate and electrode charging measurements in a scalable, microfabricated, surface-electrode ion trap
Authors:
D. T. C. Allcock,
T. P. Harty,
H. A. Janacek,
N. M. Linke,
C. J. Ballance,
A. M. Steane,
D. M. Lucas,
R. L. Jarecki Jr.,
S. D. Habermehl,
M. G. Blain,
D. Stick,
D. L. Moehring
Abstract:
We characterise the performance of a surface-electrode ion "chip" trap fabricated using established semiconductor integrated circuit and micro-electro-mechanical-system (MEMS) microfabrication processes which are in principle scalable to much larger ion trap arrays, as proposed for implementing ion trap quantum information processing. We measure rf ion micromotion parallel and perpendicular to the…
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We characterise the performance of a surface-electrode ion "chip" trap fabricated using established semiconductor integrated circuit and micro-electro-mechanical-system (MEMS) microfabrication processes which are in principle scalable to much larger ion trap arrays, as proposed for implementing ion trap quantum information processing. We measure rf ion micromotion parallel and perpendicular to the plane of the trap electrodes, and find that on-package capacitors reduce this to <~ 10 nm in amplitude. We also measure ion trapping lifetime, charging effects due to laser light incident on the trap electrodes, and the heating rate for a single trapped ion. The performance of this trap is found to be comparable with others of the same size scale.
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Submitted 24 May, 2011;
originally announced May 2011.
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Design, Fabrication, and Experimental Demonstration of Junction Surface Ion Traps
Authors:
D. L. Moehring,
C. Highstrete,
D. Stick,
K. M. Fortier,
R. Haltli,
C. Tigges,
M. G. Blain
Abstract:
We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than one million round-trip shuttles without ion loss. By min…
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We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than one million round-trip shuttles without ion loss. By minimizing the direct line of sight between trapped ions and dielectric surfaces, negligible day-to-day and trap-to-trap variations are observed. In addition to high-fidelity single-ion shuttling, multiple-ion chains survive splitting, ion-position swapping, and recombining routines. The development of two-dimensional trapping structures is an important milestone for ion-trap quantum computing and quantum simulations.
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Submitted 9 May, 2011;
originally announced May 2011.
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Demonstration of a microfabricated surface electrode ion trap
Authors:
D Stick,
K M Fortier,
R Haltli,
C Highstrete,
D L Moehring,
C Tigges,
M G Blain
Abstract:
In this paper we present the design, modeling, and experimental testing of surface electrode ion traps fabricated in a heterostructure configuration comprising a silicon substrate, silicon dioxide insulators, and aluminum electrodes. This linear trap has a geometry with symmetric RF leads, two interior DC electrodes, and 40 individual lateral DC electrodes. Plasma enhanced chemical vapor depositio…
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In this paper we present the design, modeling, and experimental testing of surface electrode ion traps fabricated in a heterostructure configuration comprising a silicon substrate, silicon dioxide insulators, and aluminum electrodes. This linear trap has a geometry with symmetric RF leads, two interior DC electrodes, and 40 individual lateral DC electrodes. Plasma enhanced chemical vapor deposition (PECVD) was used to grow silicon dioxide pillars to electrically separate overhung aluminum electrodes from an aluminum ground plane. In addition to fabrication, we report techniques for modeling the control voltage solutions and the successful demonstration of trapping and shuttling ions in two identically constructed traps.
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Submitted 16 November, 2010; v1 submitted 5 August, 2010;
originally announced August 2010.
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Demonstration of a scalable, multiplexed ion trap for quantum information processing
Authors:
D. R. Leibrandt,
J. Labaziewicz,
R. J. Clark,
I. L. Chuang,
R. J. Epstein,
C. Ospelkaus,
J. H. Wesenberg,
J. J. Bollinger,
D. Leibfried,
D. J. Wineland,
D. Stick,
J. Sterk,
C. Monroe,
C. -S. Pai,
Y. Low,
R. Frahm,
R. E. Slusher
Abstract:
A scalable, multiplexed ion trap for quantum information processing is fabricated and tested. The trap design and fabrication process are optimized for scalability to small trap size and large numbers of interconnected traps, and for integration of control electronics and optics. Multiple traps with similar designs are tested with Cd+, Mg+, and Sr+ ions at room temperature and with Sr+ at 6 K, w…
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A scalable, multiplexed ion trap for quantum information processing is fabricated and tested. The trap design and fabrication process are optimized for scalability to small trap size and large numbers of interconnected traps, and for integration of control electronics and optics. Multiple traps with similar designs are tested with Cd+, Mg+, and Sr+ ions at room temperature and with Sr+ at 6 K, with respective ion lifetimes of 90 s, 300 +/- 30 s, 56 +/- 6 s, and 4.5 +/- 1.1 hours. The motional heating rate for Mg+ at room temperature and a trap frequency of 1.6 MHz is measured to be 7 +/- 3 quanta per millisecond. For Sr+ at 6 K and 540 kHz the heating rate is measured to be 220 +/- 30 quanta per second.
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Submitted 9 July, 2009; v1 submitted 16 April, 2009;
originally announced April 2009.
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Efficient Photoionization-Loading of Trapped Cadmium Ions with Ultrafast Pulses
Authors:
L. Deslauriers,
M. Acton,
B. B. Blinov,
K. -A. Brickman,
P. C. Haljan,
W. K. Hensinger,
D. Hucul,
S. Katnik,
R. N. Kohn, Jr.,
P. J. Lee,
M. J. Madsen,
P. Maunz,
S. Olmschenk,
D. L. Moehring,
D. Stick,
J. Sterk,
M. Yeo,
K. C. Younge,
C. Monroe
Abstract:
Atomic cadmium ions are loaded into radiofrequency ion traps by photoionization of atoms in a cadmium vapor with ultrafast laser pulses. The photoionization is driven through an intermediate atomic resonance with a frequency-quadrupled mode-locked Ti:Sapphire laser that produces pulses of either 100 fsec or 1 psec duration at a central wavelength of 229 nm. The large bandwidth of the pulses phot…
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Atomic cadmium ions are loaded into radiofrequency ion traps by photoionization of atoms in a cadmium vapor with ultrafast laser pulses. The photoionization is driven through an intermediate atomic resonance with a frequency-quadrupled mode-locked Ti:Sapphire laser that produces pulses of either 100 fsec or 1 psec duration at a central wavelength of 229 nm. The large bandwidth of the pulses photoionizes all velocity classes of the Cd vapor, resulting in high loading efficiencies compared to previous ion trap loading techniques. Measured loading rates are compared with a simple theoretical model, and we conclude that this technique can potentially ionize every atom traversing the laser beam within the trapping volume. This may allow the operation of ion traps with lower levels of background pressures and less trap electrode surface contamination. The technique and laser system reported here should be applicable to loading most laser-cooled ion species.
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Submitted 4 August, 2006; v1 submitted 4 August, 2006;
originally announced August 2006.
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Scaling and Suppression of Anomalous Quantum Decoherence in Ion Traps
Authors:
L. Deslauriers,
S. Olmschenk,
D. Stick,
W. K. Hensinger,
J. Sterk,
C. Monroe
Abstract:
We measure and characterize anomalous motional decoherence of an atomic ion confined in the lowest quantum levels of a novel rf ion trap that features moveable electrodes. The scaling of decoherence rate with electrode proximity is measured, and when the electrodes are cooled from 300 K to 150 K, the decoherence rate is suppressed by an order of magnitude. This provides direct evidence that anom…
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We measure and characterize anomalous motional decoherence of an atomic ion confined in the lowest quantum levels of a novel rf ion trap that features moveable electrodes. The scaling of decoherence rate with electrode proximity is measured, and when the electrodes are cooled from 300 K to 150 K, the decoherence rate is suppressed by an order of magnitude. This provides direct evidence that anomalous motional decoherence of trapped ions stems from microscopic noisy potentials on the electrodes. These observations are relevant to quantum information processing schemes using trapped ions or other charge-based systems.
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Submitted 31 January, 2006;
originally announced February 2006.
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Ion Trap in a Semiconductor Chip
Authors:
D. Stick,
W. K. Hensinger,
S. Olmschenk,
M. J. Madsen,
K. Schwab,
C. Monroe
Abstract:
The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps…
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The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure.
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Submitted 9 January, 2006;
originally announced January 2006.
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T-junction ion trap array for two-dimensional ion shuttling, storage and manipulation
Authors:
W. K. Hensinger,
S. Olmschenk,
D. Stick,
D. Hucul,
M. Yeo,
M. Acton,
L. Deslauriers,
J. Rabchuk,
C. Monroe
Abstract:
We demonstrate a two-dimensional 11-zone ion trap array, where individual laser-cooled atomic ions are stored, separated, shuttled, and swapped. The trap geometry consists of two linear rf ion trap sections that are joined at a 90 degree angle to form a T-shaped structure. We shuttle a single ion around the corners of the T-junction and swap the positions of two crystallized ions using voltage s…
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We demonstrate a two-dimensional 11-zone ion trap array, where individual laser-cooled atomic ions are stored, separated, shuttled, and swapped. The trap geometry consists of two linear rf ion trap sections that are joined at a 90 degree angle to form a T-shaped structure. We shuttle a single ion around the corners of the T-junction and swap the positions of two crystallized ions using voltage sequences designed to accommodate the nontrivial electrical potential near the junction. Full two-dimensional control of multiple ions demonstrated in this system may be crucial for the realization of scalable ion trap quantum computation and the implementation of quantum networks.
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Submitted 13 August, 2005;
originally announced August 2005.
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Planar Ion Trap Geometry for Microfabrication
Authors:
M. J. Madsen,
W. K. Hensinger,
D. Stick,
J. A. Rabchuk,
C. Monroe
Abstract:
We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion…
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We describe a novel high aspect ratio radiofrequency linear ion trap geometry that is amenable to modern microfabrication techniques. The ion trap electrode structure consists of a pair of stacked conducting cantilevers resulting in confining fields that take the form of fringe fields from parallel plate capacitors. The confining potentials are modeled both analytically and numerically. This ion trap geometry may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers.
PACS: 39.25.+k, 03.67.Lx, 07.75.+h, 07.10+Cm
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Submitted 9 January, 2004;
originally announced January 2004.
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Atomic Qubit Manipulations with an Electro-Optic Modulator
Authors:
P. J. Lee,
B. B. Blinov,
K. Brickman,
L. Deslauriers,
M. J. Madsen,
R. Miller,
D. L. Moehring,
D. Stick,
C. Monroe
Abstract:
We report new techniques for driving high-fidelity stimulated Raman transitions in trapped ion qubits. An electro-optic modulator induces sidebands on an optical source, and interference between the sidebands allows coherent Rabi transitions to be efficiently driven between hyperfine ground states separated by 14.53 GHz in a single trapped 111Cd+ ion.
We report new techniques for driving high-fidelity stimulated Raman transitions in trapped ion qubits. An electro-optic modulator induces sidebands on an optical source, and interference between the sidebands allows coherent Rabi transitions to be efficiently driven between hyperfine ground states separated by 14.53 GHz in a single trapped 111Cd+ ion.
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Submitted 28 April, 2003;
originally announced April 2003.
