Prolonged orbital relaxation by locally modified phonon density of states for SiV$^-$ center in nanodiamonds
Authors:
Marco Klotz,
Konstantin G. Fehler,
Elena S. Steiger,
Stefan Häußler,
Richard Waltrich,
Prithvi Reddy,
Liudmila F. Kulikova,
Valery A. Davydov,
Viatcheslav N. Agafonov,
Marcus W. Doherty,
Alexander Kubanek
Abstract:
Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively-charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected…
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Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively-charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected by the defects symmetry, the spin coherence is susceptible to rapid orbital relaxation limiting the spin dephasing time. A prolongation of the orbital relaxation time is therefore of utmost urgency and has been tackled by operating at very low temperatures or by introducing large strain. However, both methods have significant drawbacks, the former requires use of dilution refrigerators and the latter affects intrinsic symmetries. Here, a novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states in the relevant frequency range, by restricting the diamond host to below 100 nm. The method works at liquid Helium temperatures of few Kelvin and in the low-strain regime.
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Submitted 2 August, 2021; v1 submitted 30 July, 2021;
originally announced July 2021.
Narrowband quantum emitters over large spectral range with Fourier-limited linewidth in hexagonal boron nitride
Authors:
A. Dietrich,
M. Bürk,
E. S. Steiger,
L. Antoniuk,
T. T. Tran,
M. Nguyen,
I. Aharonovich,
F. Jelezko,
A. Kubanek
Abstract:
Single defect centers in layered hexagonal boron nitride (hBN) are promising candidates as single photon sources for quantum optics and nanophotonics applications. However, until today spectral instability hinders many applications. Here, we perform resonant excitation measurements and observe Fourier-Transform limited (FL) linewidths down to $\approx 50$ MHz. We investigate optical properties of…
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Single defect centers in layered hexagonal boron nitride (hBN) are promising candidates as single photon sources for quantum optics and nanophotonics applications. However, until today spectral instability hinders many applications. Here, we perform resonant excitation measurements and observe Fourier-Transform limited (FL) linewidths down to $\approx 50$ MHz. We investigate optical properties of more than 600 quantum emitters (QE) in hBN. The QEs exhibit narrow zero-phonon lines (ZPL) distributed over a spectral range from 580 nm to 800 nm and with dipole-like emission with high polarization contrast. The emission frequencies can be divided into four main regions indicating distinct families or crystallographic structures of the QEs, in accord with ab-initio calculations. Finally, the emitters withstand transfer to a foreign photonic platform - namely a silver mirror, which makes them compatible with photonic devices such as optical resonators and paves the way to quantum photonics applications including quantum commmunications and quantum repeaters.
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Submitted 19 December, 2017;
originally announced December 2017.
