Showing 1–2 of 2 results for author: Sleiter, D

Photon Antibunching and Magnetospectroscopy of a Single Fluorine Donor in ZnSe

Authors: K. De Greve, S. M. Clark, D. Sleiter, K. Sanaka, T. D. Ladd, M. Panfilova, A. Pawlis, K. Lischka, Y. Yamamoto

Abstract: We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching establish the presence of single, isolated optical emitters, and magneto-optical studies are consistent with the presence of an exciton bound to the spin-impurity complex. The isolation of this single donor-bound exciton complex and its potential homogenei… ▽ More We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching establish the presence of single, isolated optical emitters, and magneto-optical studies are consistent with the presence of an exciton bound to the spin-impurity complex. The isolation of this single donor-bound exciton complex and its potential homogeneity offer promising prospects for a scalable semiconductor qubit with an optical interface. △ Less

Submitted 12 September, 2010; originally announced September 2010.

Comments: 3.1 pages, 3 figures

Journal ref: Appl. Phys. Lett. 97, 241913 (2010)

Quantum Hall Charge Sensor for Single-Donor Nuclear Spin Detection in Silicon

Authors: D. Sleiter, N. Y. Kim, K. Nozawa, T. D. Ladd, M. L. W. Thewalt, Y. Yamamoto

Abstract: We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spi… ▽ More We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spins in isotopically purified 28Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system. △ Less

Submitted 12 May, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 17 pages, 6 figures

Journal ref: New J. Phys. 12 093028 (2010)