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28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
Authors:
H. Bohuslavskyi,
S. Barraud,
M. Cassé,
V. Barral,
B. Bertrand,
L. Hutin,
F. Arnaud,
P. Galy,
M. Sanquer,
S. De Franceschi,
M. Vinet
Abstract:
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher d…
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This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
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Submitted 20 December, 2019;
originally announced February 2020.
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A CMOS silicon spin qubit
Authors:
R. Maurand,
X. Jehl,
D. Kotekar Patil,
A. Corna,
H. Bohuslavskyi,
R. Laviéville,
L. Hutin,
S. Barraud,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silic…
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Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.
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Submitted 24 May, 2016;
originally announced May 2016.
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Coupling and coherent electrical control of two dopants in a silicon nanowire
Authors:
E. Dupont-Ferrier,
B. Roche,
B. Voisin,
X. Jehl,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we…
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Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we can electrically couple two donors embedded in a multi-gate silicon transistor, and induce coherent oscillations in their charge states by means of microwave signals. We measure single-electron tunneling across the two donors, which reveals their energy spectrum. The lowest energy states, corresponding to a single electron located on either of the two donors, form a two-level system (TLS) well separated from all other electronic levels. Gigahertz driving of this TLS results in a quantum interference pattern associated with the absorption or the stimulated emission of up to ten microwave photons. We estimate a charge dephasing time of 0.3 nanoseconds, consistent with other types of charge quantum bits. Here, however, the relatively short coherence time can be counterbalanced by fast operation signals (in principle up to 1 terahertz) as allowed by the large empty energy window separating ground and excited states in donor atoms. The demonstrated coherent coupling of two donors constitutes an essential step towards donor-based quantum computing devices in silicon.
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Submitted 8 July, 2012;
originally announced July 2012.
