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Laser Activation of Single Group-IV Colour Centres in Diamond
Authors:
Xingrui Cheng,
Andreas Thurn,
Guangzhao Chen,
Gareth S. Jones,
Maddison Coke,
Mason Adshead,
Cathryn P. Michaels,
Osman Balci,
Andrea C. Ferrari,
Mete Atatüre,
Richard Curry,
Jason M. Smith,
Patrick S. Salter,
Dorian A. Gangloff
Abstract:
Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion impla…
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Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV- centres. The technique opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV- centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.
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Submitted 11 September, 2024;
originally announced September 2024.
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Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers
Authors:
Xingrui Cheng,
Nils Kolja Wessling,
Saptarsi Ghosh,
Andrew R. Kirkpatrick,
Menno J. Kappers,
Yashna N. D. Lekhai,
Gavin W. Morley,
Rachel A. Oliver,
Jason M. Smith,
Martin D. Dawson,
Patrick S. Salter,
Michael J. Strain
Abstract:
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion…
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Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centres and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes towards future scalable systems development. The micro-lenses are integrated in a non-invasive manner, as they are added on top of the unstructured diamond surface and bond by Van-der-Waals forces. For emitters at 5 micrometer depth, we find approximately 2x improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV's quantum properties after integration.
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Submitted 20 June, 2023;
originally announced June 2023.
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Microscopic processes during ultra-fast laser generation of Frenkel defects in diamond
Authors:
Benjamin Griffiths,
Andrew Kirkpatrick,
Shannon S. Nicley,
Rajesh L. Patel,
Joanna M. Zajac,
Gavin W. Morley,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mecha…
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Engineering single atomic defects into wide bandgap materials has become an attractive field in recent years due to emerging applications such as solid-state quantum bits and sensors. The simplest atomic-scale defect is the lattice vacancy which is often a constituent part of more complex defects such as the nitrogen-vacancy (NV) centre in diamond, therefore an understanding of the formation mechanisms and precision engineering of vacancies is desirable. We present a theoretical and experimental study into the ultra-fast laser generation of vacancy-interstitial pairs (Frenkel defects) in diamond. The process is described by a set of coupled rate equations of the pulsed laser interaction with the material and of the non-equilibrium dynamics of charge carriers during and in the wake of the pulse. We find that a model for Frenkel defect generation via the recombination of a bound biexciton as the electron plasma cools provides good agreement with experimental data, reproducing an effective non-linearity of $\sim$ 40 for Frenkel defect generation with respect to laser pulse energy.
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Submitted 25 May, 2021;
originally announced May 2021.
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Laser writing of scalable single colour centre in silicon carbide
Authors:
Yu-Chen Chen,
Patrick S. Salter,
Matthias Niethammer,
Matthias Widmann,
Florian Kaiser,
Roland Nagy,
Naoya Morioka,
Charles Babin,
J ürgen Erlekampf,
Patrick Berwian,
Martin Booth,
J örg Wrachtrup
Abstract:
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correc…
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Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correction in the writing apparatus and the non-annealing process, we generate single $V_{Si}$ centres with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing $V_{Si}$ centres and conclude that there are about 16 photons involved in the laser writing $V_{Si}$ centres process. Our results represent a powerful tool in fabrication of single $V_{Si}$ centres in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.
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Submitted 11 December, 2018;
originally announced December 2018.
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Laser writing of individual atomic defects in a crystal with near-unity yield
Authors:
Yu-Chen Chen,
Benjamin Griffiths,
Laiyi Weng,
Shannon Nicley,
Shazeaa N. Ishmael,
Yashna Lekhai,
Sam Johnson,
Colin J. Stephen,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
Martin J. Booth,
Patrick S. Salter,
Jason M. Smith
Abstract:
Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin de…
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Atomic defects in wide band gap materials show great promise for development of a new generation of quantum information technologies, but have been hampered by the inability to produce and engineer the defects in a controlled way. The nitrogen-vacancy (NV) color center in diamond is one of the foremost candidates, with single defects allowing optical addressing of electron spin and nuclear spin degrees of freedom with potential for applications in advanced sensing and computing. Here we demonstrate a method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy using laser processing with online fluorescence feedback. This method provides a new tool for the fabrication of engineered materials and devices for quantum technologies and offers insight into the diffusion dynamics of point defects in solids.
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Submitted 11 July, 2018;
originally announced July 2018.
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Three-dimensional solid-state qubit arrays with long-lived spin coherence
Authors:
C. J. Stephen,
B. L. Green,
Y. N. D. Lekhai,
L. Weng,
P. Hill,
S. Johnson,
A. C. Frangeskou,
P. L. Diggle,
M. J. Strain,
E. Gu,
M. E. Newton,
J. M. Smith,
P. S. Salter,
G. W. Morley
Abstract:
Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This woul…
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Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 μm)^3$ per NVC to leave room for our laser-written electrical control. The spin coherence times we measure are an order of magnitude longer than previous laser-written qubits and at least as long as non-laser-written NVC. As well as NVC quantum computing, quantum communication and nanoscale sensing could benefit from the same platform. Our approach could also be extended to other qubits in diamond and silicon carbide.
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Submitted 10 July, 2018;
originally announced July 2018.
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Laser writing of coherent colour centres in diamond
Authors:
Yu-Chen Chen,
Patrick S. Salter,
Sebastian Knauer,
Laiyi Weng,
Angelo C. Frangeskou,
Colin J. Stephen,
Philip R. Dolan,
Sam Johnson,
Ben L. Green,
Gavin W. Morley,
Mark E. Newton,
John G. Rarity,
Martin J. Booth,
Jason M. Smith
Abstract:
Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an essential element of device fabrication. Here we report the controlled generation of single nitrogen-vacancy (NV) centres in diamond using laser writing. The use…
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Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an essential element of device fabrication. Here we report the controlled generation of single nitrogen-vacancy (NV) centres in diamond using laser writing. The use of aberration correction in the writing optics allows precise positioning of vacancies within the diamond crystal, and subsequent annealing produces single NV centres with up to 45% success probability, within about 200 nm of the desired position. Selected NV centres fabricated by this method display stable, coherent optical transitions at cryogenic temperatures, a pre-requisite for the creation of distributed quantum networks of solid-state qubits. The results illustrate the potential of laser writing as a new tool for defect engineering in quantum technologies.
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Submitted 16 June, 2016;
originally announced June 2016.
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Strain-optic active control for quantum integrated photonics
Authors:
Peter C. Humphreys,
Benjamin J. Metcalf,
Justin B. Spring,
Merritt Moore,
Patrick S. Salter,
Martin J. Booth,
W. Steven Kolthammer,
Ian A. Walmsley
Abstract:
We present a practical method for active phase control on a photonic chip that has immediate applications in quantum photonics. Our approach uses strain-optic modification of the refractive index of individual waveguides, effected by a millimeter-scale mechanical actuator. The resulting phase change of propagating optical fields is rapid and polarization-dependent, enabling quantum applications th…
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We present a practical method for active phase control on a photonic chip that has immediate applications in quantum photonics. Our approach uses strain-optic modification of the refractive index of individual waveguides, effected by a millimeter-scale mechanical actuator. The resulting phase change of propagating optical fields is rapid and polarization-dependent, enabling quantum applications that require active control and polarization encoding. We demonstrate strain-optic control of non-classical states of light in silica, showing the generation of 2-photon polarisation N00N states by manipulating Hong-Ou-Mandel interference. We also demonstrate switching times of a few microseconds, which are sufficient for silica-based feed-forward control of photonic quantum states.
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Submitted 21 November, 2014; v1 submitted 12 May, 2014;
originally announced May 2014.
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On-chip low loss heralded source of pure single photons
Authors:
Justin B. Spring,
Patrick S. Salter,
Benjamin J. Metcalf,
Peter C. Humphreys,
Merritt Moore,
Nicholas Thomas-Peter,
Marco Barbieri,
Xian-Min Jin,
Nathan K. Langford,
W. Steven Kolthammer,
Martin J. Booth,
Ian A. Walmsley
Abstract:
A key obstacle to the experimental realization of many photonic quantum-enhanced technologies is the lack of low-loss sources of single photons in pure quantum states. We demonstrate a promising solution: generation of heralded single photons in a silica photonic chip by spontaneous four-wave mixing. A heralding efficiency of 40%, corresponding to a preparation efficiency of 80% accounting for det…
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A key obstacle to the experimental realization of many photonic quantum-enhanced technologies is the lack of low-loss sources of single photons in pure quantum states. We demonstrate a promising solution: generation of heralded single photons in a silica photonic chip by spontaneous four-wave mixing. A heralding efficiency of 40%, corresponding to a preparation efficiency of 80% accounting for detector performance, is achieved due to efficient coupling of the low-loss source to optical fibers. A single photon purity of 0.86 is measured from the source number statistics without filtering, and confirmed by direct measurement of the joint spectral intensity. We calculate that similar high-heralded-purity output can be obtained from visible to telecom spectral regions using this approach. On-chip silica sources can have immediate application in a wide range of single-photon quantum optics applications which employ silica photonics.
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Submitted 29 April, 2013;
originally announced April 2013.
