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Inferring charge noise source locations from correlations in spin qubits
Authors:
Juan S. Rojas-Arias,
Akito Noiri,
Jun Yoneda,
Peter Stano,
Takashi Nakajima,
Kenta Takeda,
Takashi Kobayashi,
Giordano Scappucci,
Seigo Tarucha,
Daniel Loss
Abstract:
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra do not fit well a power law; rather, we can recognize a few individual two-level fluctuators (TLFs). We demonstra…
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We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by charge noise. At low frequencies, the noise spectra do not fit well a power law; rather, we can recognize a few individual two-level fluctuators (TLFs). We demonstrate that the noise cross-correlations allow one to get information on the spatial location of such individual TLFs.
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Submitted 9 May, 2025;
originally announced May 2025.
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The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
Authors:
Juan S. Rojas-Arias,
Yohei Kojima,
Kenta Takeda,
Peter Stano,
Takashi Nakajima,
Jun Yoneda,
Akito Noiri,
Takashi Kobayashi,
Daniel Loss,
Seigo Tarucha
Abstract:
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit noise power spectrum over a frequency range of nine orders of magnitude without any gaps. We find that the low-frequency noise spectrum is similar across three d…
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We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit noise power spectrum over a frequency range of nine orders of magnitude without any gaps. We find that the low-frequency noise spectrum is similar across three different devices suggesting that it is dominated by the hyperfine coupling to nuclei. The effects of charge noise are smaller, but not negligible, and are device dependent as confirmed from the noise cross-correlations. We also observe differences to spectra reported in GaAs {[Phys. Rev. Lett. 118, 177702 (2017), Phys. Rev. Lett. 101, 236803 (2008)]}, which we attribute to the presence of the valley degree of freedom in silicon. Finally, we observe $T_2^*$ to increase upon increasing the external magnetic field, which we speculate is due to the increasing field-gradient of the micromagnet suppressing nuclear spin diffusion.
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Submitted 24 August, 2024;
originally announced August 2024.
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Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
Authors:
Juan S. Rojas-Arias,
Akito Noiri,
Peter Stano,
Takashi Nakajima,
Jun Yoneda,
Kenta Takeda,
Takashi Kobayashi,
Amir Sammak,
Giordano Scappucci,
Daniel Loss,
Seigo Tarucha
Abstract:
We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the me…
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We detect correlations in qubit-energy fluctuations of non-neighboring qubits defined in isotopically purified Si/SiGe quantum dots. At low frequencies (where the noise is strongest), the correlation coefficient reaches 10% for a next-nearest-neighbor qubit-pair separated by 200 nm. Assigning the observed noise to be of electrical origin, a simple theoretical model quantitatively reproduces the measurements and predicts a polynomial decay of correlations with interqubit distance. Our results quantify long-range correlations of noise dephasing quantum-dot spin qubits arranged in arrays, essential for scalability and fault-tolerance of such systems.
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Submitted 22 February, 2023;
originally announced February 2023.
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Noise-correlation spectrum for a pair of spin qubits in silicon
Authors:
J. Yoneda,
J. S. Rojas-Arias,
P. Stano,
K. Takeda,
A. Noiri,
T. Nakajima,
D. Loss,
S. Tarucha
Abstract:
Semiconductor qubits are appealing for building quantum processors as they may be densely integrated due to small footprint. However, a high density raises the issue of noise correlated across different qubits, which is of practical concern for scalability and fault tolerance. Here, we analyse and quantify in detail the degree of noise correlation in a pair of neighbouring silicon spin qubits ~100…
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Semiconductor qubits are appealing for building quantum processors as they may be densely integrated due to small footprint. However, a high density raises the issue of noise correlated across different qubits, which is of practical concern for scalability and fault tolerance. Here, we analyse and quantify in detail the degree of noise correlation in a pair of neighbouring silicon spin qubits ~100 nm apart. We evaluate all a-priori independent auto- and cross- power spectral densities of noise as a function of frequency. We reveal strong inter-qubit noise correlation with a correlation strength as large as ~0.7 at ~1 Hz (70% of the maximum in-phase correlation), even in the regime where the spin-spin exchange interaction contributes negligibly. We furthermore find that fluctuations of single-spin precession rates are strongly correlated with exchange noise, giving away their electrical origin. Noise cross-correlations have thus enabled us to pinpoint the most influential noise in the present device among compelling mechanisms including nuclear spins. Our work presents a powerful tool set to assess and identify the noise acting on multiple qubits and highlights the importance of long-range electric noise in densely packed silicon spin qubits.
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Submitted 30 August, 2022;
originally announced August 2022.
