Showing 1–26 of 26 results for author: Rogge, S

Roadmap on Atomic-scale Semiconductor Devices

Authors: Steven R. Schofield, Andrew J. Fisher, Eran Ginossar, Joseph W. Lyding, Richard Silver, Fan Fei, Pradeep Namboodiri, Jonathan Wyrick, M. G. Masteghin, D. C. Cox, B. N. Murdin, S. K Clowes, Joris G. Keizer, Michelle Y. Simmons, Holly G. Stemp, Andrea Morello, Benoit Voisin, Sven Rogge, Robert A. Wolkow, Lucian Livadaru, Jason Pitters, Taylor J. Z. Stock, Neil J. Curson, Robert E. Butera, Tatiana V. Pavlova , et al. (25 additional authors not shown)

Abstract: Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum dev… ▽ More Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory. △ Less

Submitted 22 January, 2025; v1 submitted 8 January, 2025; originally announced January 2025.

Comments: 94 pages

Journal ref: Nano Futures 9 012001 (2025)

Experimental quantum randomness enhanced by a quantum network

Authors: Emanuele Polino, Luis Villegas-Aguilar, Davide Poderini, Nathan Walk, Farzad Ghafari, Marco Túlio Quintino, Alexey Lyasota, Sven Rogge, Rafael Chaves, Geoff J. Pryde, Eric G. Cavalcanti, Nora Tischler, Sergei Slussarenko

Abstract: The certification of randomness is essential for both fundamental science and information technologies. Unlike traditional random number generators, randomness obtained from nonlocal correlations is fundamentally guaranteed to be unpredictable. However, it is also highly susceptible to noise. Here, we show that extending the conventional bipartite Bell scenario to hybrid quantum networks -- which… ▽ More The certification of randomness is essential for both fundamental science and information technologies. Unlike traditional random number generators, randomness obtained from nonlocal correlations is fundamentally guaranteed to be unpredictable. However, it is also highly susceptible to noise. Here, we show that extending the conventional bipartite Bell scenario to hybrid quantum networks -- which incorporate both quantum channels and entanglement sources -- enhances the robustness of certifiable randomness. Our protocol even enables randomness to be certified from Bell-local states, broadening the range of quantum states useful for this task. Through both theoretical analysis and experimental validation in a photonic network, we demonstrate enhanced performance and improved noise resilience. △ Less

Submitted 22 December, 2024; originally announced December 2024.

Comments: 14 pages, 6 figures

Nonlocality activation in a photonic quantum network

Authors: Luis Villegas-Aguilar, Emanuele Polino, Farzad Ghafari, Marco Túlio Quintino, Kiarn Laverick, Ian R. Berkman, Sven Rogge, Lynden K. Shalm, Nora Tischler, Eric G. Cavalcanti, Sergei Slussarenko, Geoff J. Pryde

Abstract: Bell nonlocality refers to correlations between two distant, entangled particles that challenge classical notions of local causality. Beyond its foundational significance, nonlocality is crucial for device-independent technologies like quantum key distribution and randomness generation. Nonlocality quickly deteriorates in the presence of noise, and restoring nonlocal correlations requires addition… ▽ More Bell nonlocality refers to correlations between two distant, entangled particles that challenge classical notions of local causality. Beyond its foundational significance, nonlocality is crucial for device-independent technologies like quantum key distribution and randomness generation. Nonlocality quickly deteriorates in the presence of noise, and restoring nonlocal correlations requires additional resources. These often come in the form of many instances of the input state and joint measurements, incurring a significant resource overhead. Here, we experimentally demonstrate that single copies of Bell-local states, incapable of violating any standard Bell inequality, can give rise to nonlocality after being embedded into a quantum network of multiple parties. We subject the initial entangled state to a quantum channel that broadcasts part of the state to two independent receivers and certify the nonlocality in the resulting network by violating a tailored Bell-like inequality. We obtain these results without making any assumptions about the prepared states, the quantum channel, or the validity of quantum theory. Our findings have fundamental implications for nonlocality and enable the practical use of nonlocal correlations in real-world applications, even in scenarios dominated by noise. △ Less

Submitted 6 May, 2024; v1 submitted 12 September, 2023; originally announced September 2023.

Comments: 14 pages, 6 figures. Final version published in Nature Communications

Journal ref: Nat. Commun. 15, 3112 (2024)

Millisecond electron spin coherence time for erbium ions in silicon

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Shao Q. Lim, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Nikolay V. Abrosimov, Hans-Joachim Pohl, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compat… ▽ More Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications. △ Less

Submitted 25 July, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 14 pages, 6 figures

Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution

Authors: Yangbo Zhang, Wenda Fan, Jiliang Yang, Hao Guan, Qi Zhang, Xi Qin, Changkui Duan, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the p… ▽ More Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques. △ Less

Submitted 1 December, 2022; originally announced December 2022.

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Authors: Jiliang Yang, Wenda Fan, Yangbo Zhang, Changkui Duan, Gabriele G. de Boo, Rose L. Ahlefeldt, Jevon J. Longdell, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a s… ▽ More Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a single 167Er3+ ion in Si. All the obtained tensors are highly anisotropic with the largest value principal axes aligning in nearly the same direction, and the trace of the lowest crystal field level g-tensor is 17.78$\pm$0.40. The results indicate that this specific Er site is likely to be a distorted cubic site that exhibits monoclinic (C1) symmetry. Finally, zero first-order-Zeeman (ZEFOZ) fields are identified for this site and could be used to reduce decoherence of hyperfine spin states in future experiments. △ Less

Submitted 24 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. B 105, 235306 (2022)

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Authors: Jiliang Yang, Jian Wang, Wenda Fan, Yangbo Zhang, Changkui Duan, Guangchong Hu, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achie… ▽ More Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale. △ Less

Submitted 27 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Applied 18, 034018 (2022)

Certified Random Number Generation from Quantum Steering

Authors: Dominick J. Joch, Sergei Slussarenko, Yuanlong Wang, Alex Pepper, Shouyi Xie, Bin-Bin Xu, Ian R. Berkman, Sven Rogge, Geoff J. Pryde

Abstract: The ultimate random number generators are those certified to be unpredictable -- including to an adversary. The use of simple quantum processes promises to provide numbers that no physical observer could predict but, in practice, unwanted noise and imperfect devices can compromise fundamental randomness and protocol security. Certified randomness protocols have been developed which remove the need… ▽ More The ultimate random number generators are those certified to be unpredictable -- including to an adversary. The use of simple quantum processes promises to provide numbers that no physical observer could predict but, in practice, unwanted noise and imperfect devices can compromise fundamental randomness and protocol security. Certified randomness protocols have been developed which remove the need for trust in devices by taking advantage of nonlocality. Here, we use a photonic platform to implement our protocol, which operates in the quantum steering scenario where one can certify randomness in a one-sided device independent framework. We demonstrate an approach for a steering-based generator of public or private randomness, and the first generation of certified random bits, with the detection loophole closed, in the steering scenario. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 7 pages, 3 figures

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

Authors: Guangchong Hu, Rose L. Ahlefeldt, Gabriele G. de Boo, Alexey Lyasota, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positivel… ▽ More We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positively identified as two identical Er3+ ions in sites of at least C2 symmetry coupled via a large, 200 GHz Ising-like spin interaction and 1.5 GHz resonant optical interaction. Small non-Ising contributions to the spin interaction are attributed to distortion of the site measurable because of the high resolution of the single-ion measurement. The interactions are compared to previous measurements made using rare earth ensemble systems, and the application of this type of strongly coupled ion array to quantum computing is discussed. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Comments: 11 pages, 5 figures

Journal ref: Quantum Sci. Technol. 7, 025019 (2022)

Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonanc… ▽ More We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Comments: 12 pages, 13 figures

Journal ref: Phys. Rev. Applied 19, 014037 (2023)

Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon

Authors: F. N. Krauth, S. K. Gorman, Y. He, M. T. Jones, P. Macha, S. Kocsis, C. Chua, B. Voisin, S. Rogge, R. Rahman, Y. Chung, M. Y. Simmons

Abstract: Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combi… ▽ More Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $π/2-X$ gate error rates of $\sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Comments: Main text: 8 pages, 4 figures. Appendix: 9 page, 3 figures

Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins

Authors: Jonathan Everts, Gavin G. G. King, Nicholas Lambert, Sacha Kocsis, Sven Rogge, Jevon J. Longdell

Abstract: Quantum magnonics is a new and active research field, leveraging the strong collective coupling between microwaves and magnetically ordered spin systems. To date work in quantum magnonics has focused on transition metals and almost entirely on ferromagnetic resonances in yttrium iron garnet (YIG). Antiferromagnetic systems have gained interest as they produce no stray field, and are therefore robu… ▽ More Quantum magnonics is a new and active research field, leveraging the strong collective coupling between microwaves and magnetically ordered spin systems. To date work in quantum magnonics has focused on transition metals and almost entirely on ferromagnetic resonances in yttrium iron garnet (YIG). Antiferromagnetic systems have gained interest as they produce no stray field, and are therefore robust to magnetic perturbations and have narrow, shape independent resonant linewidths. Here we show the first experimental evidence of ultrastrong-coupling between a microwave cavity and collective antiferromagnetic resonances (magnons) in a rare earth crystal. The combination of the unique optical and spin properties of the rare earths and collective antiferromagnetic order paves the way for novel quantum magnonic applications. △ Less

Submitted 25 November, 2019; originally announced November 2019.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 101, 214414 (2020)

Hole-Spin-Echo Envelope Modulations

Authors: Pericles Philippopoulos, Stefano Chesi, Joe Salfi, Sven Rogge, W. A. Coish

Abstract: Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it can be difficult to measure. However, an anisotropic hyperfine coupling can give rise to a substantial spin-echo envelope modulation that can be Fourier-analyze… ▽ More Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it can be difficult to measure. However, an anisotropic hyperfine coupling can give rise to a substantial spin-echo envelope modulation that can be Fourier-analyzed to accurately reveal the hyperfine tensor. Here, we give a general theoretical analysis for hole-spin-echo envelope modulation (HSEEM), and apply this analysis to the specific case of a boron-acceptor hole spin in silicon. For boron acceptor spins in unstrained silicon, both the hyperfine and Zeeman Hamiltonians are approximately isotropic leading to negligible envelope modulations. In contrast, in strained silicon, where light-hole spin qubits can be energetically isolated, we find the hyperfine Hamiltonian and $g$-tensor are sufficiently anisotropic to give spin-echo-envelope modulations. We show that there is an optimal magnetic-field orientation that maximizes the visibility of envelope modulations in this case. Based on microscopic estimates of the hyperfine coupling, we find that the maximum modulation depth can be substantial, reaching $\sim 10\%$, at a moderate laboratory magnetic field, $B\lesssim 200\,\mathrm{mT}$. △ Less

Submitted 3 September, 2019; v1 submitted 27 June, 2019; originally announced June 2019.

Comments: 10 pages, 1 figure; v2: minor revisions/clarifications to address referee comments

Journal ref: Phys. Rev. B 100, 125402 (2019)

Certification of spin-based quantum simulators

Authors: Abolfazl Bayat, Benoit Voisin, Gilles Buchs, Joe Salfi, Sven Rogge, Sougato Bose

Abstract: Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert… ▽ More Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert space. Here, in the context of Fermi-Hubbard spin-based analogue simulators, we propose a modular many-body spin to charge conversion scheme that scales linearly with both the system size and the number of low-energy eigenstates to discriminate. Our protocol is based on the global charge state measurement of a 1D spin chain performed at different detuning potentials along the chain. In the context of semiconductor-based systems, we identify realistic conditions for detuning the chain adiabatically in order to avoid state mixing while preserving charge coherence. Large simulators with vanishing energy gaps, including 2D arrays, can be certified block-by-block with a number of measurements scaling only linearly with the system size. △ Less

Submitted 11 June, 2020; v1 submitted 5 May, 2019; originally announced May 2019.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. A 101, 052344 (2020)

Engineering long spin coherence times of spin-orbit systems

Authors: T. Kobayashi, J. Salfi, J. van der Heijden, C. Chua, M. G. House, D. Culcer, W. D. Hutchison, B. C. Johnson, J. C. McCallum, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. Y. Simmons, S. Rogge

Abstract: Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s… ▽ More Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances. △ Less

Submitted 1 October, 2018; v1 submitted 28 September, 2018; originally announced September 2018.

Comments: 14 pages, 4 figures + 13 pages, 5 figures of Supplemental material

Journal ref: Nature Materials 20, 38-42 (2021)

Single-shot single-gate RF spin readout in silicon

Authors: P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, M. Y. Simmons

Abstract: For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is,… ▽ More For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the existing gates required to manipulate the qubits (Veldhorst 2017, Pakkiam 2018). However, a key requirement for a scalable quantum computer is that we must be capable of resolving the qubit state within single-shot, that is, a single measurement (DiVincenzo 2000). Here we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of $82.9\%$ at a $3.3~\text{kHz}$ measurement bandwidth. We use this technique to measure a triplet $T_-$ to singlet $S_0$ relaxation time of $0.62~\text{ms}$ in precision donor quantum dots in silicon. We also show that the use of RF readout does not impact the maximum readout time at zero detuning limited by the $S_0$ to $T_-$ decay, which remained at approximately $2~\text{ms}$. This establishes single-gate sensing as a viable readout method for spin qubits. △ Less

Submitted 5 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. X 8, 041032 (2018)

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

Authors: Qi Zhang, Guangchong Hu, Gabriele G. de Boo, Milos Rancic, Brett C. Johnson, Jeffrey C. McCallum, Jiangfeng Du, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local… ▽ More Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D mapping of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Comments: 10+5 pages, 4+3 figures

Journal ref: Nano Lett. 19, 5025 (2019)

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Authors: M. Usman, B. Voisin, J. Salfi, S. Rogge, L. C. L. Hollenberg

Abstract: Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties… ▽ More Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties of the wave function. Direct approaches to understanding such effects in donor wave functions are of great interest. Here, we apply a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell-correction formalisms previously employed in the literature. The comparison between central-cell models based on real-space image features and the Fourier transform profiles indicate that the central-cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Our study motivates a future experimental investigation of the central-cell effects via STM imaging technique with potential of fine tuning theoretical models, which could play a vital role in the design of donor-based quantum systems in scalable quantum computer architectures. △ Less

Submitted 2 October, 2017; v1 submitted 29 June, 2017; originally announced June 2017.

Comments: Nanoscale 2017

Superadiabatic quantum state transfer in spin chains

Authors: Ricardo Agundez, Charles D. Hill, Lloyd C. L. Hollenberg, Sven Rogge, Miriam Blaauboer

Abstract: In this letter we propose a superadiabatic protocol where quantum state transfer can be achieved with arbitrarily high accuracy and minimal control across long spin chains with an odd number of spins. The quantum state transfer protocol only requires the control of the couplings between the qubits on the edge and the spin chain. We predict fidelities above 0.99 for an evolution of nanoseconds usin… ▽ More In this letter we propose a superadiabatic protocol where quantum state transfer can be achieved with arbitrarily high accuracy and minimal control across long spin chains with an odd number of spins. The quantum state transfer protocol only requires the control of the couplings between the qubits on the edge and the spin chain. We predict fidelities above 0.99 for an evolution of nanoseconds using typical spin exchange coupling values of μeV. Furthermore, by building a superadiabatic formalism on top of this protocol, we propose a effective superadiabatic protocol that retains the minimal control over the spin chain and improves the fidelity by up to 20%. △ Less

Submitted 12 January, 2017; v1 submitted 17 April, 2016; originally announced April 2016.

Comments: Final accepted version

Journal ref: Phys. Rev. A 95, 012317 (2017)

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Authors: Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd L. C. Hollenberg

Abstract: The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum inf… ▽ More The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications. △ Less

Submitted 11 January, 2016; originally announced January 2016.

Journal ref: Nature Nanotechnology 11, 763 (2016)

Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon

Authors: Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C. L. Hollenberg

Abstract: Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fie… ▽ More Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric field dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multi-qubit architectures, based on both strain-only as well as hybrid (strain+field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and/or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. Whilst faster gate operations are realisable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions. △ Less

Submitted 23 April, 2015; originally announced April 2015.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. B 91, 245209, 2015

Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal

Authors: Xavier Fernandez-Gonzalvo, Yu-Hui Chen, Chunming Yin, Sven Rogge, Jevon J. Longdell

Abstract: The ability to convert quantum states from microwave photons to optical photons is important for hybrid system approaches to quantum information processing. In this paper we report the up-conversion of a microwave signal into the optical telecommunications wavelength band using erbium dopants in a yttrium orthosilicate crystal via stimulated Raman scattering. The microwaves were applied to the sam… ▽ More The ability to convert quantum states from microwave photons to optical photons is important for hybrid system approaches to quantum information processing. In this paper we report the up-conversion of a microwave signal into the optical telecommunications wavelength band using erbium dopants in a yttrium orthosilicate crystal via stimulated Raman scattering. The microwaves were applied to the sample using a 3D copper loop-gap resonator and the coupling and signal optical fields were single passed. The conversion efficiency was low, in agreement with a theoretical analysis, but can be significantly enhanced with an optical resonator. △ Less

Submitted 18 June, 2015; v1 submitted 8 January, 2015; originally announced January 2015.

Journal ref: Phys. Rev. A 92, 062313 (2015)

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Authors: Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit Voisin, Sven Rogge, Gerhard Klimeck, Lloyd L. C. Hollenberg

Abstract: Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric scr… ▽ More Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter ($η_2$) from -1.3 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the static dielectric screening to -1.72 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of $η_2$ to -1.87 $\times$ 10$^{-3} μ$m$^2$/V$^2$, resulting in an excellent agreement of theory with the experimentally measured value of -1.9 $\pm$ 0.2 $\times$ 10$^{-3} μ$m$^2$/V$^2$. Based on our direct comparison of the calculations with the experiment, we conclude that the previously ignored non-static dielectric screening of the donor potential and the lattice strain significantly influence the donor wave function charge density and thereby leads to a better agreement with the available experimental data sets. △ Less

Submitted 7 October, 2014; originally announced October 2014.

Comments: 8 pages, 3 figures

Journal ref: J. Phys.: Condens. Matter 27, 154207, 2015

Optical addressing of an individual erbium ion in silicon

Authors: Chunming Yin, Milos Rancic, Gabriele G. de Boo, Nikolas Stavrias, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge

Abstract: The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond u… ▽ More The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in developing an interconnect between silicon and optical based quantum computing technologies. △ Less

Submitted 9 April, 2013; v1 submitted 8 April, 2013; originally announced April 2013.

Comments: Corrected the third affiliation. Corrected one cross-reference of "Fig. 3b" to "Fig. 3c". Corrected the caption of Fig. 3a by changing (+-)1 to 0

Journal ref: Nature 497, 91 (2013)

Silicon Quantum Electronics

Authors: Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello, Michelle Y. Simmons, Lloyd C. L. Hollenberg, Gerhard Klimeck, Sven Rogge, Susan N. Coppersmith, Mark A. Eriksson

Abstract: This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps inc… ▽ More This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics. △ Less

Submitted 16 April, 2013; v1 submitted 22 June, 2012; originally announced June 2012.

Comments: Accepted for publication in Reviews of Modern Physics. 64 pages, 62 figures

Journal ref: Rev. Mod. Phys. 85, 961 (2013)

Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

Authors: Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, Lloyd C. L. Hollenberg

Abstract: The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion at… ▽ More The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable. △ Less

Submitted 19 May, 2009; originally announced May 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys.Rev.B80:155301,2009