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Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators
Authors:
Jason S. Pelc,
Kelley Rivoire,
Sonny Vo,
Charles Santori,
David A. Fattal,
Raymond G. Beausoleil
Abstract:
We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microrin…
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We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in undoped crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.
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Submitted 14 February, 2014; v1 submitted 21 October, 2013;
originally announced October 2013.
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Quasiresonant Excitation of InP/InGaP Quantum Dots Using Second Harmonic Generated in a Photonic Crystal Cavity
Authors:
Sonia Buckley,
Kelley Rivoire,
Fariba Hatami,
Jelena Vuckovic
Abstract:
Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided v…
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Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided via second harmonic generated from a telecommunications wavelength laser resonant with the fundamental mode of a photonic crystal cavity, fabricated at twice the quantum dot transition wavelength. The second harmonic is generated using the χ(2) nonlinearity of the InGaP material matrix.
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Submitted 3 October, 2012;
originally announced October 2012.
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Engineered Quantum Dot Single Photon Sources
Authors:
Sonia Buckley,
Kelley Rivoire,
Jelena Vuckovic
Abstract:
Fast, high efficiency, and low error single photon sources are required for implementation of a number of quantum information processing applications. The fastest triggered single photon sources to date have been demonstrated using epitaxially grown semiconductor quantum dots (QDs), which can be conveniently integrated with optical microcavities. Recent advances in QD technology, including demonst…
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Fast, high efficiency, and low error single photon sources are required for implementation of a number of quantum information processing applications. The fastest triggered single photon sources to date have been demonstrated using epitaxially grown semiconductor quantum dots (QDs), which can be conveniently integrated with optical microcavities. Recent advances in QD technology, including demonstrations of high temperature and telecommunications wavelength single photon emission, have made QD single photon sources more practical. Here we discuss the applications of single photon sources and their various requirements, before reviewing the progress made on a quantum dot platform in meeting these requirements.
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Submitted 3 October, 2012;
originally announced October 2012.
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Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities
Authors:
Kelley Rivoire,
Sonia Buckley,
Yuncheng Song,
Minjoo Larry Lee,
Jelena Vuckovic
Abstract:
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lin…
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We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
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Submitted 5 January, 2012;
originally announced January 2012.
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Fast quantum dot single photon source triggered at telecommunications wavelength
Authors:
Kelley Rivoire,
Sonia Buckley,
Arka Majumdar,
Hyochul Kim,
Pierre Petroff,
Jelena Vuckovic
Abstract:
We demonstrate a quantum dot single photon source at 900 nm triggered at 300 MHz by a continuous wave telecommunications wavelength laser followed by an electro-optic modulator. The quantum dot is excited by on-chip-generated second harmonic radiation, resonantly enhanced by a GaAs photonic crystal cavity surrounding the InAs quantum dot. Our result suggests a path toward the realization of teleco…
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We demonstrate a quantum dot single photon source at 900 nm triggered at 300 MHz by a continuous wave telecommunications wavelength laser followed by an electro-optic modulator. The quantum dot is excited by on-chip-generated second harmonic radiation, resonantly enhanced by a GaAs photonic crystal cavity surrounding the InAs quantum dot. Our result suggests a path toward the realization of telecommunications-wavelength-compatible quantum dot single photon sources with speeds exceeding 1 GHz.
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Submitted 20 December, 2010; v1 submitted 1 December, 2010;
originally announced December 2010.
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Deterministic coupling of a single nitrogen vacancy center to a photonic crystal cavity
Authors:
Dirk Englund,
Brendan Shields,
Kelley Rivoire,
Fariba Hatami,
Jelena Vuckovic,
Hongkun Park,
Mikhail D. Lukin
Abstract:
We describe and experimentally demonstrate a technique for deterministic coupling between a photonic crystal (PC) nanocavity and single emitters. The technique is based on in-situ scanning of a PC cavity over a sample and allows the positioning of the cavity over a desired emitter with nanoscale resolution. The power of the technique, which we term a Scanning Cavity Microscope (SCM), is demonstrat…
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We describe and experimentally demonstrate a technique for deterministic coupling between a photonic crystal (PC) nanocavity and single emitters. The technique is based on in-situ scanning of a PC cavity over a sample and allows the positioning of the cavity over a desired emitter with nanoscale resolution. The power of the technique, which we term a Scanning Cavity Microscope (SCM), is demonstrated by coupling the PC nanocavity to a single nitrogen vacancy (NV) center in diamond, an emitter system that provides optically accessible electron and nuclear spin qubits.
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Submitted 12 May, 2010;
originally announced May 2010.