Showing 1–29 of 29 results for author: Pohl, H

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Authors: Jesus D. Cifuentes, Tuomo Tanttu, Paul Steinacker, Santiago Serrano, Ingvild Hansen, James P. Slack-Smith, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Nard Dumoulin Stuyck, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Fay E. Hudson, Wee Han Lim, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva

Abstract: Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electros… ▽ More Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology. △ Less

Submitted 4 September, 2023; originally announced September 2023.

Comments: 9 pages, 4 figures

High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin

Authors: Jonathan Y. Huang, Rocky Y. Su, Wee Han Lim, MengKe Feng, Barnaby van Straaten, Brandon Severin, Will Gilbert, Nard Dumoulin Stuyck, Tuomo Tanttu, Santiago Serrano, Jesus D. Cifuentes, Ingvild Hansen, Amanda E. Seedhouse, Ensar Vahapoglu, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Christopher C. Escott, Natalia Ares, Stephen D. Bartlett, Andrea Morello, Andre Saraiva, Arne Laucht, Andrew S. Dzurak , et al. (1 additional authors not shown)

Abstract: The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures… ▽ More The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation. △ Less

Submitted 18 August, 2023; v1 submitted 3 August, 2023; originally announced August 2023.

Journal ref: Nature 627, 772-777 (2024)

Millisecond electron spin coherence time for erbium ions in silicon

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Shao Q. Lim, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Nikolay V. Abrosimov, Hans-Joachim Pohl, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compat… ▽ More Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications. △ Less

Submitted 25 July, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 14 pages, 6 figures

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

Authors: Santiago Serrano, MengKe Feng, Wee Han Lim, Amanda E. Seedhouse, Tuomo Tanttu, Will Gilbert, Christopher C. Escott, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andre Saraiva, Andrew S. Dzurak, Arne Laucht

Abstract: High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we pr… ▽ More High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Journal ref: PRX QUANTUM 5, 010301 (2024)

Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon

Authors: Kamyar Saeedi, Stephanie Simmons, Jeff Z. Salvail, Phillip Dluhy, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, John J. L. Morton, Mike L. W. Thewalt

Abstract: Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have been studied extensively but are limited to low temperatures ($\le$10 K); however, the nuclear spins of ionized donors have potential for high temperature operatio… ▽ More Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have been studied extensively but are limited to low temperatures ($\le$10 K); however, the nuclear spins of ionized donors have potential for high temperature operation. We use optical methods and dynamical decoupling to realize this potential for an ensemble of 31P donors in isotopically purified 28Si and observe a room temperature coherence time of over 39 minutes. We further show that a coherent spin superposition can be cycled from 4.2 K to room temperature and back, and report a cryogenic coherence time of 3 hours in the same system. △ Less

Submitted 30 March, 2023; originally announced March 2023.

Comments: 5 pages, 4 figures

Journal ref: Science (2013) Vol 342, Issue 6160 pp. 830-833

Bounds to electron spin qubit variability for scalable CMOS architectures

Authors: Jesús D. Cifuentes, Tuomo Tanttu, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Santiago Serrano, Dennis Otter, Daniel Dunmore, Philip Y. Mai, Frédéric Schlattner, MengKe Feng, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Wee Han Lim, Fay E. Hudson, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva

Abstract: Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, co… ▽ More Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated. △ Less

Submitted 5 July, 2024; v1 submitted 26 March, 2023; originally announced March 2023.

Comments: 20 pages, 8 figures

Journal ref: Nat Commun 15, 4299 (2024)

Assessment of error variation in high-fidelity two-qubit gates in silicon

Authors: Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang, Nard Dumoulin Stuyck, Will Gilbert, Rocky Y. Su, MengKe Feng, Jesus D. Cifuentes, Amanda E. Seedhouse, Stefan K. Seritan, Corey I. Ostrove, Kenneth M. Rudinger, Ross C. C. Leon, Wister Huang, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Robin Blume-Kohout, Stephen D. Bartlett, Andrea Morello, Arne Laucht, Chih Hwan Yang , et al. (2 additional authors not shown)

Abstract: Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro… ▽ More Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors. △ Less

Submitted 15 March, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

Journal ref: Nat. Phys. 6 (2024)

Waveguide-integrated silicon T centres

Authors: A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. A. Brunelle, E. R. MacQuarrie, N. R. Lee-Hone, M. Ruether, M. Kazemi, A. T. K. Kurkjian, S. Roorda, N. V. Abrosimov, H. -J. Pohl, M. L. W. Thewalt, D. B. Higginbottom, S. Simmons

Abstract: The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects o… ▽ More The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T_1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term. △ Less

Submitted 28 September, 2022; originally announced September 2022.

On-demand electrical control of spin qubits

Authors: Will Gilbert, Tuomo Tanttu, Wee Han Lim, MengKe Feng, Jonathan Y. Huang, Jesus D. Cifuentes, Santiago Serrano, Philip Y. Mai, Ross C. C. Leon, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andrea Morello, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet… ▽ More Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors. △ Less

Submitted 18 March, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology (2023)

Engineering long spin coherence times of spin-orbit systems

Authors: T. Kobayashi, J. Salfi, J. van der Heijden, C. Chua, M. G. House, D. Culcer, W. D. Hutchison, B. C. Johnson, J. C. McCallum, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. Y. Simmons, S. Rogge

Abstract: Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s… ▽ More Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances. △ Less

Submitted 1 October, 2018; v1 submitted 28 September, 2018; originally announced September 2018.

Comments: 14 pages, 4 figures + 13 pages, 5 figures of Supplemental material

Journal ref: Nature Materials 20, 38-42 (2021)

Characterization of the Si:Se+ spin-photon interface

Authors: Adam DeAbreu, Camille Bowness, Rohan J. S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L. W. Thewalt, Stephanie Simmons

Abstract: Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultra-long-lived photonic memories, distributed quantum networks, microwave to optical photon converters… ▽ More Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultra-long-lived photonic memories, distributed quantum networks, microwave to optical photon converters, and spin-based quantum processors, all linked using integrated silicon photonics. However, the indirect bandgap of silicon makes identification of efficient spin-photon interfaces nontrivial. Here we build upon the recent identification of chalcogen donors as a promising spin-photon interface in silicon. We determined that the spin-dependent optical degree of freedom has a transition dipole moment stronger than previously thought (here 1.96(8) Debye), and the T1 spin lifetime in low magnetic fields is longer than previously thought (> 4.6(1.5) hours). We furthermore determined the optical excited state lifetime (7.7(4) ns), and therefore the natural radiative efficiency (0.80(9) %), and by measuring the phonon sideband, determined the zero-phonon emission fraction (16(1) %). Taken together, these parameters indicate that an integrated quantum optoelectronic platform based upon chalcogen donor qubits in silicon is well within reach of current capabilities. △ Less

Submitted 26 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. Applied 11, 044036 (2019)

Highly enriched $^{28}$Si reveals remarkable optical linewidths and fine structure for well-known damage centers

Authors: C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, S. Simmons, M. L. W. Thewalt

Abstract: Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched $^{28}$Si than in natural Si, due to the elimination of inhomogeneous isotopic br… ▽ More Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched $^{28}$Si than in natural Si, due to the elimination of inhomogeneous isotopic broadening, this has not yet been investigated for radiation damage centers. We report results for the well-known G, W and C damage centers in highly enriched $^{28}$Si, with optical linewidth improvements in some cases of over two orders of magnitude, revealing previously hidden fine structure in the G center emission and absorption. These results have direct implications for the linewidths to be expected from single center emission, even in natural Si, and for models for the G center structure. The advantages of $^{28}$Si can be readily extended to the study of other radiation damage centers in Si. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 98, 195201 (2018)

Dynamical decoupling of interacting dipolar spin ensembles

Authors: Evan S. Petersen, A. M. Tyryshkin, K. M. Itoh, Joel W. Ager, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. A. Lyon

Abstract: We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by th… ▽ More We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by the average evolution of a single spin in a changing mean field. These calculations agree well with experiments and do not require powerful hardware. Our results add to past attempts to explain similar phenomena in solid state nuclear magnetic resonance (NMR). Although the fundamental physics of NMR are similar to ESR, the larger linewidths in ESR and stronger dipolar interactions between electron spins compared to nuclear spins preclude drawing conclusions from NMR studies alone. For bulk spins, we also find that using XYXY results in less inflation of the deduced echo decay times as compared to decays obtained with CPMG. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Comments: 10 pages, 5 figures

Zero field optical magnetic resonance study of phosphorus donors in 28-silicon

Authors: Kevin J. Morse, Phillip Dluhy, Julian Huber, Jeff Z. Salvail, Kamyar Saeedi, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, S. Simmons, M. L. W. Thewalt

Abstract: Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous qubit initialization, manipulation and readout fidelities near ~99.9%. Here we characterize the phosphorus in silicon system in the regime of "z… ▽ More Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous qubit initialization, manipulation and readout fidelities near ~99.9%. Here we characterize the phosphorus in silicon system in the regime of "zero" magnetic field, where a singlet-triplet spin clock transition can be accessed, using laser spectroscopy and magnetic resonance methods. We show the system can be optically hyperpolarized and has ~10 s Hahn echo coherence times, even at Earth's magnetic field and below. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 97, 115205 (2018)

Coherent Rabi dynamics of a superradiant spin ensemble in a microwave cavity

Authors: B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon

Abstract: We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the sp… ▽ More We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the spin ensemble-cavity polariton resonances of 2$g\sqrt{N}$ = 580 kHz (where each spin is coupled with strength $g$) in a cavity with a quality factor of 75,000 ($γ\ll κ\approx$ 60 kHz where $γ$ and $κ$ are the spin dephasing and cavity loss rates, respectively). The spin ensemble has a long dephasing time (T$_2^*$ = 9 $μ$s) providing a wide window for viewing the dynamics of the coupled spin ensemble-cavity system. The free induction decay shows up to a dozen collapses and revivals revealing a coherent exchange of excitations between the superradiant state of the spin ensemble and the cavity at the rate $g\sqrt{N}$. The ensemble is found to evolve as a single large pseudospin according to the Tavis-Cummings model due to minimal inhomogeneous broadening and uniform spin-cavity coupling. We demonstrate independent control of the total spin and the initial Z-projection of the psuedospin using optical excitation and microwave manipulation respectively. We vary the microwave excitation power to rotate the pseudospin on the Bloch sphere and observe a long delay in the onset of the superradiant emission as the pseudospin approaches full inversion. This delay is accompanied by an abrupt $π$ phase shift in the peusdospin microwave emission. The scaling of this delay with the initial angle and the sudden phase shift are explained by the Tavis-Cummings model. △ Less

Submitted 1 February, 2017; originally announced February 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. X 7, 031002 (2017)

A photonic platform for donor spin qubits in silicon

Authors: Kevin J. Morse, Rohan J. S. Abraham, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L. W. Thewalt, Stephanie Simmons

Abstract: Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical qubits offer significant advantages including 3-hour coherence ($T_2$) lifetimes, as well as simultaneous qubit initialization, manipulation and readout fideli… ▽ More Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical qubits offer significant advantages including 3-hour coherence ($T_2$) lifetimes, as well as simultaneous qubit initialization, manipulation and readout fidelities near $\sim\!99.9\%$. These properties meet the requirements for many modern quantum error correction protocols, which are essential for constructing large-scale universal quantum technologies. However, a method of reliably coupling spatially-separated qubits, which crucially does not sacrifice qubit quality and is robust to manufacturing imperfections, has yet to be identified. Here we present such a platform for donor qubits in silicon, by exploiting optically-accessible `deep' chalcogen donors. We show that these donors emit highly uniform light, can be optically initialized, and offer long-lived spin qubit ground states without requiring milliKelvin temperatures. These combined properties make chalcogen donors uniquely suitable for incorporation into silicon photonic architectures for single-shot single-qubit readout as well as for multi-qubit coupling. This unlocks clear pathways for silicon-based quantum computing, spin to photon conversion, photonic memories, silicon-integrated triggered single photon sources and all-optical silicon switches. △ Less

Submitted 10 June, 2016; originally announced June 2016.

Comments: 7 pages, 4 figures

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Authors: Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studie… ▽ More Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$. △ Less

Submitted 1 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

Hyperfine Stark effect of shallow donors in silicon

Authors: G. Pica, G. Wolfowicz, M. Urdampilleta, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. J. L. Morton, R. N. Bhatt, S. A. Lyon, B. W. Lovett

Abstract: We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. V… ▽ More We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 90 195204 (2014)

Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal

Authors: P. Gumann, O. Patange, C. Ramanathan, H. Haas, O. Moussa, M. L. W. Thewalt, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, K. M. Itoh, D. G. Cory

Abstract: We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free ind… ▽ More We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free induction decay from a 1 cm$^3$ sample ($\approx 10^{15}$ spins) was 113. By transferring the sample to an X-band ESR spectrometer, we were able to obtain a lower bound for the nuclear spin polarization at 1.7 K of 64 %. The $^{31}$P-T$_{2}$ measured with a Hahn echo sequence was 420 ms at 1.7 K, which was extended to 1.2 s with a Carr Purcell cycle. The T$_1$ of the $^{31}$P nuclear spins at 1.7 K is extremely long and could not be determined, as no decay was observed even on a timescale of 4.5 hours. Optical excitation was performed with a 1047 nm laser, which provided above bandgap excitation of the silicon. The build-up of the hyperpolarization at 4.2 K followed a single exponential with a characteristic time of 577 s, while the build-up at 1.7 K showed bi-exponential behavior with characteristic time constants of 578 s and 5670 s. △ Less

Submitted 12 December, 2014; v1 submitted 20 July, 2014; originally announced July 2014.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Lett. 113, 267604 (2014)

Conditional control of donor nuclear spins in silicon using Stark shifts

Authors: Gary Wolfowicz, Matias Urdampilleta, Mike L. W. Thewalt, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, John J. L. Morton

Abstract: Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors… ▽ More Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities. △ Less

Submitted 28 May, 2014; originally announced May 2014.

Comments: 5 pages, 4 figures, 1 supplementary information

Fast, low-power manipulation of spin ensembles in superconducting microresonators

Authors: Anthony J. Sigillito, Hans Malissa, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton, Andrew A. Houck, David I. Schuster, S. A. Lyon

Abstract: We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pul… ▽ More We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pulses to overcome microwave magnetic field ($B_{1}$) inhomogeneities inherent to CPW resonators. This allows for uniform control over a randomly distributed spin ensemble. Sensitivity data are reported showing a single shot (no signal averaging) sensitivity to $10^{7}$ spins or $3 \times 10^{4}$ spins/$\sqrt{Hz}$ with averaging. △ Less

Submitted 1 May, 2014; v1 submitted 28 February, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures

Atomic clock transitions in silicon-based spin qubits

Authors: Gary Wolfowicz, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon, John J. L. Morton

Abstract: A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of f… ▽ More A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of frequency standards and atomic clocks, is the use of particular spin transitions which are inherently robust to external perturbations. Here we show that such `clock transitions' (CTs) can be observed for electron spins in the solid state, in particular using bismuth donors in silicon. This leads to dramatic enhancements in the electron spin coherence time, exceeding seconds. We find that electron spin qubits based on CTs become less sensitive to the local magnetic environment, including the presence of 29Si nuclear spins as found in natural silicon. We expect the use of such CTs will be of additional importance for donor spins in future devices, mitigating the effects of magnetic or electric field noise arising from nearby interfaces. △ Less

Submitted 28 January, 2013; originally announced January 2013.

Comments: 11 pages, 6 figures

Geometric Phase Gates with Adiabatic Control in Electron Spin Resonance

Authors: Hua Wu, Erik M. Gauger, Richard E. George, Mikko Möttönen, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Kohei M. Itoh, Mike L. W. Thewalt, John J. L. Morton

Abstract: High-fidelity quantum operations are a key requirement for fault-tolerant quantum information processing. In electron spin resonance, manipulation of the quantum spin is usually achieved with time-dependent microwave fields. In contrast to the conventional dynamic approach, adiabatic geometric phase operations are expected to be less sensitive to certain kinds of noise and field inhomogeneities. H… ▽ More High-fidelity quantum operations are a key requirement for fault-tolerant quantum information processing. In electron spin resonance, manipulation of the quantum spin is usually achieved with time-dependent microwave fields. In contrast to the conventional dynamic approach, adiabatic geometric phase operations are expected to be less sensitive to certain kinds of noise and field inhomogeneities. Here, we investigate such phase gates applied to electron spins both through simulations and experiments, showing that the adiabatic geometric phase gate is indeed inherently robust against inhomogeneity in the applied microwave field strength. While only little advantage is offered over error-correcting composite pulses for modest inhomogeneities <=10%, the adiabatic approach reveals its potential for situations where field inhomogeneities are unavoidably large. △ Less

Submitted 26 March, 2013; v1 submitted 2 August, 2012; originally announced August 2012.

Journal ref: Phys. Rev. A 87, 032326 (2013)

Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si

Authors: Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin cohere… ▽ More Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin coherence times are limited by the presence of 29Si impurities. Here we describe electron spin resonance (ESR) and electron nuclear double resonance (ENDOR) studies on 209Bi in isotopically pure 28Si. ESR and ENDOR linewidths, transition probabilities and coherence times are understood in terms of the spin Hamiltonian parameters showing a dependence on field and mI of the 209Bi nuclear spin. We explore various decoherence mechanisms applicable to the donor electron spin, measuring coherence times up to 700 ms at 1.7 K at X-band, comparable with 28Si:P. The coherence times we measure follow closely the calculated field-sensitivity of the transition frequency, providing a strong motivation to explore 'clock' transitions where coherence lifetimes could be further enhanced. △ Less

Submitted 13 September, 2012; v1 submitted 16 July, 2012; originally announced July 2012.

Comments: 5 pages, 4 figures

Electron spin coherence exceeding seconds in high purity silicon

Authors: Alexei M. Tyryshkin, Shinichi Tojo, John J. L. Morton, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Thomas Schenkel, Michael L. W. Thewalt, Kohei M. Itoh, S. A. Lyon

Abstract: Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other mater… ▽ More Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure $^{28}$Si material, with a residual $^{29}$Si concentration of less than 50 ppm and donor densities of $10^{14-15}$ per cm$^3$. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime $T_2$ up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin $T_2$ of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits. △ Less

Submitted 18 May, 2011; originally announced May 2011.

Comments: 18 pages, 4 figures, supplementary information

Violation of a Leggett-Garg inequality with ideal non-invasive measurements

Authors: George C. Knee, Stephanie Simmons, Erik M. Gauger, John J. L. Morton, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Kohei M. Itoh, Mike L. W. Thewalt, G. Andrew D. Briggs, Simon C. Benjamin

Abstract: The quantum superposition principle states that an entity can exist in two different states simultaneously, counter to our 'classical' intuition. Is it possible to understand a given system's behaviour without such a concept? A test designed by Leggett and Garg can rule out this possibility. The test, originally intended for macroscopic objects, has been implemented in various systems. However to-… ▽ More The quantum superposition principle states that an entity can exist in two different states simultaneously, counter to our 'classical' intuition. Is it possible to understand a given system's behaviour without such a concept? A test designed by Leggett and Garg can rule out this possibility. The test, originally intended for macroscopic objects, has been implemented in various systems. However to-date no experiment has employed the 'ideal negative result' measurements that are required for the most robust test. Here we introduce a general protocol for these special measurements using an ancillary system which acts as a local measuring device but which need not be perfectly prepared. We report an experimental realisation using spin-bearing phosphorus impurities in silicon. The results demonstrate the necessity of a non-classical picture for this class of microscopic system. Our procedure can be applied to systems of any size, whether individually controlled or in a spatial ensemble. △ Less

Submitted 30 November, 2011; v1 submitted 1 April, 2011; originally announced April 2011.

Comments: 6+4 pages. Supplementary Methods section included

Journal ref: Nat. Commun. 3:606 (2012)

Entanglement in a Solid State Spin Ensemble

Authors: Stephanie Simmons, Richard M. Brown, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton

Abstract: Entanglement is the quintessential quantum phenomenon and a necessary ingredient in most emerging quantum technologies, including quantum repeaters, quantum information processing (QIP) and the strongest forms of quantum cryptography. Spin ensembles, such as those in liquid state nuclear magnetic resonance, have been powerful in the development of quantum control methods, however, these demonstrat… ▽ More Entanglement is the quintessential quantum phenomenon and a necessary ingredient in most emerging quantum technologies, including quantum repeaters, quantum information processing (QIP) and the strongest forms of quantum cryptography. Spin ensembles, such as those in liquid state nuclear magnetic resonance, have been powerful in the development of quantum control methods, however, these demonstrations contained no entanglement and ultimately constitute classical simulations of quantum algorithms. Here we report the on-demand generation of entanglement between an ensemble of electron and nuclear spins in isotopically engineered phosphorus-doped silicon. We combined high field/low temperature electron spin resonance (3.4 T, 2.9 K) with hyperpolarisation of the 31P nuclear spin to obtain an initial state of sufficient purity to create a non-classical, inseparable state. The state was verified using density matrix tomography based on geometric phase gates, and had a fidelity of 98% compared with the ideal state at this field and temperature. The entanglement operation was performed simultaneously, with high fidelity, to 10^10 spin pairs, and represents an essential requirement of a silicon-based quantum information processor. △ Less

Submitted 24 November, 2010; v1 submitted 1 October, 2010; originally announced October 2010.

Comments: 4 pages, 3 figures plus supporting information of 4 pages, 1 figure v2: Updated references

Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si

Authors: M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl

Abstract: The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly isotopically enriched 28Si enables an optical readout of both the donor electron and nuclear spins by resolving the donor hyperfine splitting in the near-gap donor b… ▽ More The electron and nuclear spins of the shallow donor 31P are promising qubit candidates invoked in many proposed Si-based quantum computing schemes. We have recently shown that the near-elimination of inhomogeneous broadening in highly isotopically enriched 28Si enables an optical readout of both the donor electron and nuclear spins by resolving the donor hyperfine splitting in the near-gap donor bound exciton transitions. We have also shown that pumping these same transitions can very quickly produce large electron and nuclear hyperpolarizations at low magnetic fields, where the equilibrium electron and nuclear polarizations are very small. Here we show preliminary results of the measurement of 31P neutral donor NMR parameters using this optical nuclear hyperpolarization mechanism for preparation of the 31P nuclear spin system, followed by optical readout of the resulting nuclear spin population after manipulation with NMR pulse sequences. This allows for the observation of single-shot NMR signals with very high signal to noise ratio under conditions where conventional NMR is not possible, due to the low concentration of 31P and the small equilibrium polarization. △ Less

Submitted 1 June, 2011; v1 submitted 29 September, 2010; originally announced September 2010.

Comments: Invited Presentation at ICPS-30 (2010), Seoul, Korea

Journal ref: J. Appl. Phys. 109, 102411 (2011)

Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon

Authors: A. Yang, M. Steger, T. Sekiguchi, M. L. W. Thewalt, T. D. Ladd, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl

Abstract: We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a specific hyperfine state by optically pumping donor bound exciton hyperfine transitions, which can be spectrally resolved in 28Si. Electron and nuclear polarizations… ▽ More We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a specific hyperfine state by optically pumping donor bound exciton hyperfine transitions, which can be spectrally resolved in 28Si. Electron and nuclear polarizations of 90% and 76%, respectively, are obtained in less than a second, providing an initialization mechanism for qubits based on these spins, and enabling further ESR and NMR studies on dilute 31P in 28Si. △ Less

Submitted 12 August, 2009; v1 submitted 9 March, 2009; originally announced March 2009.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 102, 257401 (2009)