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First-principles computational methods for quantum defects in two-dimensional materials: A perspective
Authors:
Hosung Seo,
Viktor Ivády,
Yuan Ping
Abstract:
Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters (SPEs) and spin qubits. Recently, two-dimensional (2D) materials gained prominence as a host of quantum defects with many attractive features derived from their atomically thin and layered material formfactor. In this perspective, we discuss first-principle…
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Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters (SPEs) and spin qubits. Recently, two-dimensional (2D) materials gained prominence as a host of quantum defects with many attractive features derived from their atomically thin and layered material formfactor. In this perspective, we discuss first-principles computational methods and challenges to predict the spin and electronic properties of quantum defects in 2D materials. We focus on the open quantum system nature of the defects and their interaction with external parameters such as electric field, magnetic field, and lattice strain. We also discuss how such prediction and understanding can be used to guide experimental studies, ranging from defect identification to tuning of their spin and optical properties. This perspective provides significant insights into the interplay between the defect, the host material, and the environment, which will be essential in the pursuit of ideal two-dimensional quantum defect platforms.
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Submitted 1 October, 2024;
originally announced October 2024.
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Single nuclear spin detection and control in a van der Waals material
Authors:
Xingyu Gao,
Sumukh Vaidya,
Kejun Li,
Saakshi Dikshit,
Shimin Zhang,
Peng Ju,
Kunhong Shen,
Yuanbin Jin,
Yuan Ping,
Tongcang Li
Abstract:
Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Due to its two-dimensional structure, hBN allows spin defects to be positioned closer to target samples than in three-dimensional crystals, making it ideal for atomic-scale…
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Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Due to its two-dimensional structure, hBN allows spin defects to be positioned closer to target samples than in three-dimensional crystals, making it ideal for atomic-scale quantum sensing, including nuclear magnetic resonance (NMR) of single molecules. However, the chemical structures of these defects remain unknown, and detecting a single nuclear spin with an hBN spin defect has been elusive. In this study, we created single spin defects in hBN using $^{13}$C ion implantation and identified three distinct defect types. We observed both $S=1$ and $S=1/2$ spin states within a single hBN spin defect, with only the $S=1/2$ states showing strong hyperfine interactions with nearby $^{13}$C nuclear spins. For the first time, we demonstrated atomic-scale NMR and coherent control of individual nuclear spins in a vdW material. By comparing experimental results with density-functional theory calculations, we propose chemical structures for these spin defects. Our work advances the understanding of single spin defects in hBN and provides a pathway to enhance quantum sensing using hBN spin defects with nuclear spins as quantum memories.
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Submitted 3 September, 2024;
originally announced September 2024.
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Substrate Effects on Spin Relaxation in Two-Dimensional Dirac Materials with Strong Spin-Orbit Coupling
Authors:
Junqing Xu,
Yuan Ping
Abstract:
Understanding substrate effects on spin dynamics and relaxation in two-dimensional (2D) materials is of key importance for spintronics and quantum information applications. However, the key factors that determine the substrate effect on spin relaxation, in particular for materials with strong spin-orbit coupling, have not been well understood. Here we performed first-principles real-time density-m…
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Understanding substrate effects on spin dynamics and relaxation in two-dimensional (2D) materials is of key importance for spintronics and quantum information applications. However, the key factors that determine the substrate effect on spin relaxation, in particular for materials with strong spin-orbit coupling, have not been well understood. Here we performed first-principles real-time density-matrix dynamics simulations with spin-orbit coupling (SOC) and quantum descriptions of electron-phonon and electron-impurity scattering for the spin lifetimes of supported/free-standing germanene, a prototypical strong SOC 2D Dirac material. We show that the effects of different substrates on spin lifetime can surprisingly differ by two orders of magnitude. We find that substrate effects on $τ_s$ are closely related to substrate-induced modifications of the SOC-field anisotropy, which changes the spin-flip scattering matrix elements. We propose a new electronic quantity, named spin-flip angle $θ^{\uparrow\downarrow}$, to characterize spin relaxation caused by intervalley spin-flip scattering. We find that the spin relaxation rate is approximately proportional to the averaged value of $\mathrm{sin}^{2}\left(θ^{\uparrow\downarrow}/2\right)$, which can be used as a guiding parameter of controlling spin relaxation.
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Submitted 3 December, 2022; v1 submitted 1 June, 2022;
originally announced June 2022.
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Nuclear spin polarization and control in a van der Waals material
Authors:
Xingyu Gao,
Sumukh Vaidya,
Kejun Li,
Peng Ju,
Boyang Jiang,
Zhujing Xu,
Andres E. Llacsahuanga Allcca,
Kunhong Shen,
Takashi Taniguchi,
Kenji Watanabe,
Sunil A. Bhave,
Yong P. Chen,
Yuan Ping,
Tongcang Li
Abstract:
Van der Waals layered materials are a focus of materials research as they support strong quantum effects and can easily form heterostructures. Electron spins in van der Waals materials played crucial roles in many recent breakthroughs, including topological insulators, two-dimensional (2D) magnets, and spin liquids. However, nuclear spins in van der Waals materials remain an unexplored quantum res…
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Van der Waals layered materials are a focus of materials research as they support strong quantum effects and can easily form heterostructures. Electron spins in van der Waals materials played crucial roles in many recent breakthroughs, including topological insulators, two-dimensional (2D) magnets, and spin liquids. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report the first demonstration of optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively-charged boron vacancy ($V_B^-$) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. Remarkably, we observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of $V_B^-$ defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. We also detect strong electron-mediated nuclear-nuclear spin coupling that is 5 orders of magnitude larger than the direct nuclear spin dipolar coupling, enabling multi-qubit operations. Nitrogen nuclear spins in a triangle lattice will be suitable for large-scale quantum simulation. Our work opens a new frontier with nuclear spins in van der Waals materials for quantum information science and technology.
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Submitted 24 March, 2022;
originally announced March 2022.
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Ab initio Ultrafast Spin Dynamics in Solids
Authors:
Junqing Xu,
Adela Habib,
Ravishankar Sundararaman,
Yuan Ping
Abstract:
Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and capable for ns to ms simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to s…
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Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and capable for ns to ms simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to simulate ultrafast spin dynamics for general solid-state systems. Through the complete first-principles descriptions of pump, probe and scattering processes including electron-phonon, electron-impurity and electron-electron scatterings with self-consistent electronic spin-orbit couplings, our method can directly simulate the ultrafast pump-probe measurements for coupled spin and electron dynamics over ns at any temperatures and doping levels. We first apply this method to a prototypical system GaAs and obtain excellent agreement with experiments. We find that the relative contributions of different scattering mechanisms and phonon modes differ considerably between spin and carrier relaxation processes. In sharp contrast to previous work based on model Hamiltonians, we point out that the electron-electron scattering is negligible at room temperature but becomes dominant at low temperatures for spin relaxation in n-type GaAs. We further examine ultrafast dynamics in novel spin-valleytronic materials - monolayer and bilayer WSe2 with realistic defects. We find that spin relaxation is highly sensitive to local symmetry and chemical bonds around defects. Our work provides a predictive computational platform for spin dynamics in solids, which has unprecedented potentials for designing new materials ideal for spintronics and quantum information technology.
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Submitted 30 September, 2021; v1 submitted 15 December, 2020;
originally announced December 2020.
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Intersystem Crossing and Exciton-Defect Coupling of Spin Defects in Hexagonal Boron Nitride
Authors:
Tyler J. Smart,
Kejun Li,
Junqing Xu,
Yuan Ping
Abstract:
Despite the recognition of two-dimensional (2D) systems as emerging and scalable host materials of single photon emitters or spin qubits, uncontrolled and undetermined chemical nature of these quantum defects has been a roadblock to further development. Leveraging the design of extrinsic defects can circumvent these persistent issues and provide an ultimate solution. Here we established a complete…
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Despite the recognition of two-dimensional (2D) systems as emerging and scalable host materials of single photon emitters or spin qubits, uncontrolled and undetermined chemical nature of these quantum defects has been a roadblock to further development. Leveraging the design of extrinsic defects can circumvent these persistent issues and provide an ultimate solution. Here we established a complete theoretical framework to accurately and systematically design quantum defects in wide-bandgap 2D systems. With this approach, essential static and dynamical properties are equally considered for spin qubit discovery. In particular, many-body interactions such as defect-exciton couplings are vital for describing excited state properties of defects in ultrathin 2D systems. Meanwhile, nonradiative processes such as phonon-assisted decay and intersystem crossing rates require careful evaluation, which compete together with radiative processes. From a thorough screening of defects based on first-principles calculations, we identify promising single photon emitters such as SiVV and spin qubits such as TiVV and MoVV in hexagonal boron nitride. This work provided a complete first-principles theoretical framework for defect design in 2D materials.
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Submitted 23 March, 2021; v1 submitted 6 September, 2020;
originally announced September 2020.
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Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles
Authors:
Feng Wu,
Tyler Smart,
Junqing Xu,
Yuan Ping
Abstract:
Identification and design of defects in two-dimensional (2D) materials as promising single photon emitters (SPE) requires a deep understanding of underlying carrier recombination mechanisms. Yet, the dominant mechanism of carrier recombination at defects in 2D materials has not been well understood, and some outstanding questions remain: How do recombination processes at defects differ between 2D…
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Identification and design of defects in two-dimensional (2D) materials as promising single photon emitters (SPE) requires a deep understanding of underlying carrier recombination mechanisms. Yet, the dominant mechanism of carrier recombination at defects in 2D materials has not been well understood, and some outstanding questions remain: How do recombination processes at defects differ between 2D and 3D systems? What factors determine defects in 2D materials as excellent SPE at room temperature? In order to address these questions, we developed first-principles methods to accurately calculate the radiative and non-radiative recombination rates at defects in 2D materials, using h-BN as a prototypical example. We reveal the carrier recombination mechanism at defects in 2D materials being mostly dominated by defect-defect state recombination in contrast to defect-bulk state recombination in most 3D semiconductors. In particular, we disentangle the non-radiative recombination mechanism into key physical quantities: zero-phonon line (ZPL) and Huang-Rhys factor. At the end, we identified strain can effectively tune the electron-phonon coupling at defect centers and drastically change non-radiative recombination rates. Our theoretical development serves as a general platform for understanding carrier recombination at defects in 2D materials, while providing pathways for engineering of quantum efficiency of SPE.
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Submitted 27 August, 2019; v1 submitted 5 June, 2019;
originally announced June 2019.
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Practicality of spin chain 'wiring' in diamond quantum technologies
Authors:
Yuting Ping,
Brendon W. Lovett,
Simon C. Benjamin,
Erik M. Gauger
Abstract:
Coupled spin chains are promising candidates for 'wiring up' qubits in solid-state quantum computing (QC). In particular, two nitrogen-vacancy centers in diamond can be connected by a chain of implanted nitrogen impurities; when driven by a suitable global fields the chain can potentially enable quantum state transfer at room temperature. However, our detailed analysis of error effects suggests th…
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Coupled spin chains are promising candidates for 'wiring up' qubits in solid-state quantum computing (QC). In particular, two nitrogen-vacancy centers in diamond can be connected by a chain of implanted nitrogen impurities; when driven by a suitable global fields the chain can potentially enable quantum state transfer at room temperature. However, our detailed analysis of error effects suggests that foreseeable systems may fall far short of the fidelities required for QC. Fortunately the chain can function in the more modest role as a mediator of noisy entanglement, enabling QC provided that we use subsequent purification. For instance, a chain of 5 spins with inter-spin distances of 10 nm has finite entangling power as long as the T2 time of the spins exceeds 0.55 ms. Moreover we show that re-purposing the chain this way can remove the restriction to nearest-neighbor interactions, so eliminating the need for complicated dynamical decoupling sequences.
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Submitted 6 March, 2013; v1 submitted 25 October, 2012;
originally announced October 2012.
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A coherent and passive one dimensional quantum memory
Authors:
Yuting Ping,
John H. Jefferson,
Brendon W. Lovett
Abstract:
We show that the state of a flying qubit may be transferred to a chain of identical, (near) ferromagnetically polarised, but non-interacting, static spin-1/2 particles in a passive way. During this process the flying qubit is coherently polarised, emerging in the direction of the majority static spins. We also show that this process is reversible for at least two flying qubits injected sequentiall…
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We show that the state of a flying qubit may be transferred to a chain of identical, (near) ferromagnetically polarised, but non-interacting, static spin-1/2 particles in a passive way. During this process the flying qubit is coherently polarised, emerging in the direction of the majority static spins. We also show that this process is reversible for at least two flying qubits injected sequentially and thus has the potential to be exploited as a passive quantum memory to encode the flying qubits without the necessity of resetting between successive encoding operations. We show that the quantum information may be spread over many static spins in the memory chain, making the mechanism resistent to spin decoherence and other imperfections. Among some potential architectures, we discuss implementing the memory in a photonic waveguide embedded with quantum dots, which is resilient to various possible errors.
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Submitted 24 August, 2012; v1 submitted 23 August, 2012;
originally announced August 2012.
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Measurement-based quantum computing with a spin ensemble coupled to a stripline cavity
Authors:
Yuting Ping,
Erik M. Gauger,
Simon C. Benjamin
Abstract:
Recently a new form of quantum memory has been proposed. The storage medium is an ensemble of electron spins, coupled to a stripline cavity and an ancillary readout system. Theoretical studies suggest that the system should be capable of storing numerous qubits within the ensemble, and an experimental proof-of-concept has already been performed. Here we show that this minimal architecture is not l…
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Recently a new form of quantum memory has been proposed. The storage medium is an ensemble of electron spins, coupled to a stripline cavity and an ancillary readout system. Theoretical studies suggest that the system should be capable of storing numerous qubits within the ensemble, and an experimental proof-of-concept has already been performed. Here we show that this minimal architecture is not limited to storage but is in fact capable of full quantum processing by employing measurement-based entanglement. The technique appears to be remarkably robust against the anticipated dominant error types. The key enabling component, namely a readout technology that non-destructively determines "are there n photons in the cavity?", has already been realised experimentally.
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Submitted 1 February, 2012; v1 submitted 7 August, 2011;
originally announced August 2011.
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Generating distributed entanglement from electron currents
Authors:
Yuting Ping,
Avinash Kolli,
John H. Jefferson,
Brendon W. Lovett
Abstract:
Several recent experiments have demonstrated the viability of a passive device that can generate spin-entangled currents in two separate leads. However, manipulation and measurement of individual flying qubits in a solid state system has yet to be achieved. This is particularly difficult when a macroscopic number of these indistinguishable qubits are present. In order to access such an entangled c…
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Several recent experiments have demonstrated the viability of a passive device that can generate spin-entangled currents in two separate leads. However, manipulation and measurement of individual flying qubits in a solid state system has yet to be achieved. This is particularly difficult when a macroscopic number of these indistinguishable qubits are present. In order to access such an entangled current resource, we therefore show how to use it to generate distributed, static entanglement. The spatial separation between the entangled static pair can be much higher than that achieved by only exploiting the tunnelling effects between quantum dots. Our device is completely passive, and requires only weak Coulomb interactions between static and flying spins. We show that the entanglement generated is robust to decoherence for large enough currents.
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Submitted 26 September, 2011; v1 submitted 27 July, 2010;
originally announced July 2010.
