Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays
Authors:
Anantha S. Rao,
Donovan Buterakos,
Barnaby van Straaten,
Valentin John,
Cécile X. Yu,
Stefan D. Oosterhout,
Lucas Stehouwer,
Giordano Scappucci,
Menno Veldhorst,
Francesco Borsoi,
Justyna P. Zwolak
Abstract:
Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders indep…
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Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS) -- a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low- and high-tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems.
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Submitted 6 May, 2025; v1 submitted 19 November, 2024;
originally announced November 2024.
Universal control of four singlet-triplet qubits
Authors:
Xin Zhang,
Elizaveta Morozova,
Maximilian Rimbach-Russ,
Daniel Jirovec,
Tzu-Kan Hsiao,
Pablo Cova Fariña,
Chien-An Wang,
Stefan D. Oosterhout,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst,
Lieven M. K. Vandersypen
Abstract:
The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubi…
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The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubits in this system and show two-axis single-qubit control of each qubit and SWAP-style two-qubit gates between all neighbouring qubit pairs, yielding average single-qubit gate fidelities of 99.49(8)-99.84(1)% and Bell state fidelities of 73(1)-90(1)%. Combining these operations, we experimentally implement a circuit designed to generate and distribute entanglement across the array. A remote Bell state with a fidelity of 75(2)% and concurrence of 22(4)% is achieved. These results highlight the potential of singlet-triplet qubits as a competing platform for quantum computing and indicate that scaling up the control of quantum dot spins in extended bilinear arrays can be feasible.
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Submitted 23 July, 2024; v1 submitted 26 December, 2023;
originally announced December 2023.
