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Nanoscale vector electric field imaging using a single electron spin
Authors:
M. S. J Barson,
L. M. Oberg,
L. P. McGuinness,
A. Denisenko,
N. B. Manson,
J. Wrachtrup,
M. W. Doherty
Abstract:
The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (NV) center in diamond is capable of high-sensitivity electrometry, demonstrations have so far been limited to macroscopic field features or detection of single charges internal to diamond itself. In this work we greatly…
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The ability to perform nanoscale electric field imaging of elementary charges at ambient temperatures will have diverse interdisciplinary applications. While the nitrogen-vacancy (NV) center in diamond is capable of high-sensitivity electrometry, demonstrations have so far been limited to macroscopic field features or detection of single charges internal to diamond itself. In this work we greatly extend these capabilities by using a shallow NV center to image the electric field of a charged atomic force microscope tip with nanoscale resolution. This is achieved by measuring Stark shifts in the NV spin-resonance due to AC electric fields. To achieve this feat we employ for the first time, the integration of Qdyne with scanning quantum microscopy. We demonstrate near single charge sensitivity of $η_e = 5.3$ charges/$\sqrt{\text{Hz}}$, and sub-charge detection ($0.68e$). This proof-of-concept experiment provides the motivation for further sensing and imaging of electric fields using NV centers in diamond.
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Submitted 24 November, 2020;
originally announced November 2020.
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Optimised fast gates for quantum computing with trapped ions
Authors:
Evan P. G. Gale,
Zain Mehdi,
Lachlan M. Oberg,
Alexander K. Ratcliffe,
Simon A. Haine,
Joseph J. Hope
Abstract:
We present an efficient approach to optimising pulse sequences for implementing fast entangling two-qubit gates on trapped ion quantum information processors. We employ a two-phase procedure for optimising gate fidelity, which we demonstrate for multi-ion systems in linear Paul trap and microtrap architectures. The first phase involves a global optimisation over a computationally inexpensive cost…
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We present an efficient approach to optimising pulse sequences for implementing fast entangling two-qubit gates on trapped ion quantum information processors. We employ a two-phase procedure for optimising gate fidelity, which we demonstrate for multi-ion systems in linear Paul trap and microtrap architectures. The first phase involves a global optimisation over a computationally inexpensive cost function constructed under strong approximations of the gate dynamics. The second phase involves local optimisations that utilise a more precise ODE description of the gate dynamics, which captures the non-linearity of the Coulomb interaction and the effects of finite laser repetition rate. We propose two novel gate schemes that are compatible with this approach, and we demonstrate that they outperform existing schemes in terms of achievable gate speed and fidelity for feasible laser repetition rates. In optimising sub-microsecond gates in microtrap architectures, the proposed schemes achieve orders of magnitude higher fidelities than previous proposals. Finally, we investigate the impact of pulse imperfections on gate fidelity and evaluate error bounds for a range of gate speeds.
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Submitted 5 March, 2020; v1 submitted 16 December, 2019;
originally announced December 2019.
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Spin coherent quantum transport of electrons between defects in diamond
Authors:
Lachlan M Oberg,
Eric Huang,
Prithvi M Reddy,
Audrius Alkauskas,
Andrew D Greentree,
Jared H Cole,
Neil B Manson,
Carlos A Meriles,
Marcus W Doherty
Abstract:
The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method…
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The nitrogen-vacancy color center in diamond has rapidly emerged as an important solid-state system for quantum information processing. While individual spin registers have been used to implement small-scale diamond quantum computing, the realization of a large-scale device requires development of an on-chip quantum bus for transporting information between distant qubits. Here we propose a method for coherent quantum transport of an electron and its spin state between distant NV centers. Transport is achieved by the implementation of spatial stimulated adiabatic Raman passage through the optical control of the NV center charge states and the confined conduction states of a diamond nanostructure. Our models show that for two NV centers in a diamond nanowire, high fidelity transport can be achieved over distances of order hundreds of nanometres in timescales of order hundreds of nanoseconds. Spatial adiabatic passage is therefore a promising option for realizing an on-chip spin quantum bus.
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Submitted 16 May, 2019;
originally announced May 2019.
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Micromotion-Enhanced Fast Entangling Gates For Trapped Ion Quantum Computing
Authors:
Alexander K. Ratcliffe,
Lachlan M. Oberg,
Joseph J. Hope
Abstract:
RF-induced micromotion in trapped ion systems is typically minimised or circumvented to avoid off-resonant couplings for adiabatic processes such as multi-ion gate operations. Non-adiabatic entangling gates (so-called `fast gates') do not require resolution of specific motional sidebands, and are therefore not limited to timescales longer than the trapping period. We find that fast gates designed…
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RF-induced micromotion in trapped ion systems is typically minimised or circumvented to avoid off-resonant couplings for adiabatic processes such as multi-ion gate operations. Non-adiabatic entangling gates (so-called `fast gates') do not require resolution of specific motional sidebands, and are therefore not limited to timescales longer than the trapping period. We find that fast gates designed for micromotion-free environments have significantly reduced fidelity in the presence of micromotion. We show that when fast gates are designed to account for the RF-induced micromotion, they can, in fact, out-perform fast gates in the absence of micromotion. The state-dependent force due to the laser induces energy shifts that are amplified by the state-independent forces producing the micromotion. This enhancement is present for all trapping parameters and is robust to realistic sources of experimental error. This result paves the way for fast two-qubit entangling gates on scalable 2D architectures, where micromotion is necessarily present on at least one inter-ion axis.
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Submitted 23 February, 2020; v1 submitted 17 February, 2019;
originally announced February 2019.
