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Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride
Authors:
Mohammad Abdullah Sadi,
Luca Basso,
David A Fehr,
Xingyu Gao,
Sumukh Vaidya,
Emmeline G Riendeau,
Gajadhar Joshi,
Tongcang Li,
Michael E Flatté,
Andrew M Mounce,
Yong P Chen
Abstract:
Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^-$). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we de…
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Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^-$). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of $V_{\text{B}}^-$ spin defects in hBN driven by circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwave shifted in phase from a RFSoC FPGA to generate circularly polarized microwaves. This enables selective spin $|0\rangle\rightarrow|-1\rangle$ or $|0\rangle\rightarrow|1\rangle$ excitation of $V_{\text{B}}^-$ defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of magnetic field on spin-state selectivity. Our technique enhances the potential of hBN platform for quantum sensing through better spin state control and magnetic sensitivity particularly at low fields.
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Submitted 4 June, 2025;
originally announced June 2025.
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Time-resolved diamond magnetic microscopy of superparamagnetic iron-oxide nanoparticles
Authors:
B. A. Richards,
N. Ristoff,
J. Smits,
A. Jeronimo Perez,
I. Fescenko,
M. D. Aiello,
F. Hubert,
Y. Silani,
N. Mosavian,
M. Saleh Ziabari,
A. Berzins,
J. T. Damron,
P. Kehayias,
D. Egbebunmi,
J. E. Shield,
D. L. Huber,
A. M. Mounce,
M. P. Lilly,
T. Karaulanov,
A. Jarmola,
A. Laraoui,
V. M. Acosta
Abstract:
Superparamagnetic iron-oxide nanoparticles (SPIONs) are promising probes for biomedical imaging, but the heterogeneity of their magnetic properties is difficult to characterize with existing methods. Here, we perform widefield imaging of the stray magnetic fields produced by hundreds of isolated ~30-nm SPIONs using a magnetic microscope based on nitrogen-vacancy centers in diamond. By analyzing th…
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Superparamagnetic iron-oxide nanoparticles (SPIONs) are promising probes for biomedical imaging, but the heterogeneity of their magnetic properties is difficult to characterize with existing methods. Here, we perform widefield imaging of the stray magnetic fields produced by hundreds of isolated ~30-nm SPIONs using a magnetic microscope based on nitrogen-vacancy centers in diamond. By analyzing the SPION magnetic field patterns as a function of applied magnetic field, we observe substantial field-dependent transverse magnetization components that are typically obscured with ensemble characterization methods. We find negligible hysteresis in each of the three magnetization components for nearly all SPIONs in our sample. Most SPIONs exhibit a sharp Langevin saturation curve, enumerated by a characteristic polarizing applied field, B_c. The B_c distribution is highly asymmetric, with a standard deviation (1.4 mT) that is larger than the median (0.6 mT). Using time-resolved magnetic microscopy, we directly record SPION Néel relaxation, after switching off a 31 mT applied field, with a temporal resolution of ~60 ms that is limited by the ring-down time of the electromagnet coils. For small bias fields B_{hold}=1.5-3.5 mT, we observe a broad range of SPION Néel relaxation times--from milliseconds to seconds--that are consistent with an exponential dependence on B_{hold}. Our time-resolved diamond magnetic microscopy study reveals rich SPION sample heterogeneity and may be extended to other fundamental studies of nanomagnetism.
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Submitted 3 February, 2025; v1 submitted 20 November, 2024;
originally announced November 2024.
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Wide-field microwave magnetic field imaging with nitrogen-vacancy centers in diamond
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Gajadhar Joshi,
Michael P. Lilly,
Matthew B. Jordan,
Andrew M. Mounce
Abstract:
Non-invasive imaging of microwave (MW) magnetic fields with microscale lateral resolution is pivotal for various applications, such as MW technologies and integrated circuit failure analysis. Diamond nitrogen-vacancy (NV) center magnetometry has emerged as an ideal tool, offering $μ$m-scale resolution, millimeter-scale field of view, high sensitivity, and non-invasive imaging compatible with diver…
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Non-invasive imaging of microwave (MW) magnetic fields with microscale lateral resolution is pivotal for various applications, such as MW technologies and integrated circuit failure analysis. Diamond nitrogen-vacancy (NV) center magnetometry has emerged as an ideal tool, offering $μ$m-scale resolution, millimeter-scale field of view, high sensitivity, and non-invasive imaging compatible with diverse samples. However, up until now, it has been predominantly used for imaging of static or low-frequency magnetic fields or, concerning MW field imaging, to directly characterize the same microwave device used to drive the NV spin transitions. In this work we leverage an NV center ensemble in diamond for wide-field imaging of MW magnetic fields generated by a test device employing a differential measurement protocol. The microscope is equipped with a MW loop to induce Rabi oscillations between NV spin states, and the MW field from the device-under-test is measured through local deviations in the Rabi frequency. This differential protocol yields magnetic field maps of a 2.57 GHz MW field with a sensitivity of $\sim$ 9 $μ$T Hz$^{-1/2}$ for a total measurement duration of $T = 357$ s, covering a $340\times340$ $μ$m$^2$ field of view with a $μ$m-scale spatial resolution and a DUT input power dynamic range of 30 dB. This work demonstrates a novel NV magnetometry protocol, based on differential Rabi frequency measurement, that extends NV wide-field imaging capabilities to imaging of weak MW magnetic fields that would be difficult to measure directly through standard NV Rabi magnetometry.
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Submitted 18 October, 2024; v1 submitted 24 September, 2024;
originally announced September 2024.
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Fault Localization in a Microfabricated Surface Ion Trap using Diamond Nitrogen-Vacancy Center Magnetometry
Authors:
Pauli Kehayias,
Matthew A. Delaney,
Raymond A. Haltli,
Susan M. Clark,
Melissa C. Revelle,
Andrew M. Mounce
Abstract:
As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hu…
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As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred with likely integrated-photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy (NV) centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared to intentionally-created faults, finding that the root-cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.
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Submitted 16 December, 2024; v1 submitted 13 March, 2024;
originally announced March 2024.
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Mitigation of Nitrogen Vacancy Ionization from Material Integration for Quantum Sensing
Authors:
Jacob Henshaw,
Pauli Kehayias,
Luca Basso,
Michael Jaris,
Rong Cong,
Michael Titze,
Tzu-Ming Lu,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing.…
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The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials near the diamond surface. This is a rich complex area of study with novel nano-magnetism and electronic behavior, that the NV center would be ideal for sensing. However, due to the electronic properties of the NV itself and its host material, getting high quality NV centers within nanometers of such systems is challenging. Band bending caused by space charges formed at the metal-semiconductor interface force the NV center into its insensitive charge states. Here, we investigate optimizing this interface by depositing thin metal films and thin insulating layers on a series of NV ensembles at different depths to characterize the impact of metal films on different ensemble depths. We find an improvement of coherence and dephasing times we attribute to ionization of other paramagnetic defects. The insulating layer of alumina between the metal and diamond provide improved photoluminescence and higher sensitivity in all modes of sensing as compared to direct contact with the metal, providing as much as a factor of 2 increase in sensitivity, decrease of integration time by a factor of 4, for NV $T_1$ relaxometry measurements.
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Submitted 12 April, 2023;
originally announced April 2023.
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High-Resolution Short-Circuit Fault Localization in a Multi-Layer Integrated Circuit using a Quantum Diamond Microscope
Authors:
P. Kehayias,
J. Walraven,
A. L. Rodarte,
A. M. Mounce
Abstract:
As integrated circuit (IC) geometry and packaging become more sophisticated with ongoing fabrication and design innovations, the electrical engineering community needs increasingly-powerful failure analysis (FA) methods to meet the growing troubleshooting challenges of multi-layer (with multiple metal layers) and multi-chip components. In this work, we investigate a new electronics FA method using…
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As integrated circuit (IC) geometry and packaging become more sophisticated with ongoing fabrication and design innovations, the electrical engineering community needs increasingly-powerful failure analysis (FA) methods to meet the growing troubleshooting challenges of multi-layer (with multiple metal layers) and multi-chip components. In this work, we investigate a new electronics FA method using a quantum diamond microscope (QDM) to image the magnetic fields from short-circuit faults. After quantifying the performance by detecting short-circuit faults in a multi-layer silicon die, we assess how a QDM would detect faults in a heterogeneously integrated (HI) die stack. This work establishes QDM-based magnetic imaging as a competitive technique for electronics FA, offering high spatial resolution, high sensitivity, and robust instrumentation. We anticipate these advantages to be especially useful for finding faults deep within chip-stack ICs with many metal layers, optically-opaque layers, or optically-scattering layers.
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Submitted 2 February, 2023;
originally announced February 2023.
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Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Heejun Byeon,
Michael P. Lilly,
Ezra Bussmann,
Deanna M. Campbell,
Shashank Misra,
Andrew M. Mounce
Abstract:
The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include wh…
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The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
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Submitted 28 July, 2022;
originally announced July 2022.
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Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond
Authors:
Jacob Henshaw,
Pauli Kehayias,
Maziar Saleh Ziabari,
Michael Titze,
Erin Morissette,
Kenji Watanabe,
Takashi Taniguchi,
J. I. A Li,
Victor M. Acosta,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in…
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Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.
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Submitted 29 December, 2021;
originally announced December 2021.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
Authors:
P. Kehayias,
E. V. Levine,
L. Basso,
J. Henshaw,
M. Saleh Ziabari,
M. Titze,
R. Haltli,
J. Okoro,
D. R. Tibbetts,
D. M. Udoni,
E. Bielejec,
M. P. Lilly,
T. M. Lu,
P. D. D. Schwindt,
A. M. Mounce
Abstract:
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system…
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Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
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Submitted 19 January, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
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A physically unclonable function using NV diamond magnetometry and micromagnet arrays
Authors:
Pauli Kehayias,
Ezra Bussmann,
Tzu-Ming Lu,
Andrew M. Mounce
Abstract:
A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $μ$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array,…
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A physically unclonable function (PUF) is an embedded hardware security measure that provides protection against counterfeiting. Here we present our work on using an array of randomly-magnetized micron-sized ferromagnetic bars (micromagnets) as a PUF. We employ a 4 $μ$m thick surface layer of nitrogen-vacancy (NV) centers in diamond to image the magnetic fields from each micromagnet in the array, after which we extract the magnetic polarity of each micromagnet using image analysis techniques. After evaluating the randomness of the micromagnet array PUF and the sensitivity of the NV readout, we conclude by discussing the possible future enhancements for improved security and magnetic readout.
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Submitted 18 February, 2020;
originally announced February 2020.
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Computer-automated tuning procedures for semiconductor quantum dot arrays
Authors:
A. R. Mills,
M. M. Feldman,
C. Monical,
P. J. Lewis,
K. W. Larson,
A. M. Mounce,
J. R. Petta
Abstract:
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibra…
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As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tunnel couplings in a triple quantum dot in a computer automated fashion. Finally, we adopt the use of a `tunnel coupling lever arm' to model the interdot barrier gate response and discuss how it can be used to more rapidly tune interdot tunnel couplings to the GHz values that are compatible with exchange gates.
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Submitted 24 July, 2019;
originally announced July 2019.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
