Showing 1–27 of 27 results for author: Mohiyaddin, F A

Valley Splitting Correlations Across a Silicon Quantum Well

Authors: Jonathan C. Marcks, Emily Eagen, Emma C. Brann, Merritt P. Losert, Tali Oh, John Reily, Christopher S. Wang, Daniel Keith, Fahd A. Mohiyaddin, Florian Luthi, Matthew J. Curry, Jiefei Zhang, F. Joseph Heremans, Mark Friesen, Mark A. Eriksson

Abstract: Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the… ▽ More Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design. △ Less

Submitted 16 April, 2025; originally announced April 2025.

Comments: 10 pages, 6 figures

Operating two exchange-only qubits in parallel

Authors: Mateusz T. Mądzik, Florian Luthi, Gian Giacomo Guerreschi, Fahd A. Mohiyaddin, Felix Borjans, Jason D. Chadwick, Matthew J. Curry, Joshua Ziegler, Sarah Atanasov, Peter L. Bavdaz, Elliot J. Connors, J. Corrigan, H. Ekmel Ercan, Robert Flory, Hubert C. George, Benjamin Harpt, Eric Henry, Mohammad M. Islam, Nader Khammassi, Daniel Keith, Lester F. Lampert, Todor M. Mladenov, Randy W. Morris, Aditi Nethwewala, Samuel Neyens , et al. (16 additional authors not shown)

Abstract: Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in qua… ▽ More Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology. △ Less

Submitted 1 April, 2025; originally announced April 2025.

Short two-qubit pulse sequences for exchange-only spin qubits in 2D layouts

Authors: Jason D. Chadwick, Gian Giacomo Guerreschi, Florian Luthi, Mateusz T. Mądzik, Fahd A. Mohiyaddin, Prithviraj Prabhu, Albert T. Schmitz, Andrew Litteken, Shavindra Premaratne, Nathaniel C. Bishop, Anne Y. Matsuura, James S. Clarke

Abstract: Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six electrons in six quantum dots, has so far been limited to a small number of the possible configurations, and previous works lack analyses of design considerations and implications for quantum error correction. Using a s… ▽ More Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six electrons in six quantum dots, has so far been limited to a small number of the possible configurations, and previous works lack analyses of design considerations and implications for quantum error correction. Using a simple and fast optimization method, we generate complete pulse sequences for CX, CZ, iSWAP, leakage-controlled CX, and leakage-controlled CZ two-qubit gates on 450 unique planar six-dot topologies and analyze differences in sequence length (up to 43\% reduction) across topology classes. In addition, we show that relaxing constraints on post-operation spin locations can yield further reductions in sequence length; conversely, constraining these locations in a particular way generates a CXSWAP operation with minimal additional cost over a standard CX. We integrate this pulse library into the Intel quantum stack and experimentally verify pulse sequences on a Tunnel Falls chip for different operations in a linear-connectivity device to confirm that they work as expected. Finally, we explore architectural implications of these results for quantum error correction. Our work guides hardware and software design choices for future implementations of scalable quantum dot architectures. △ Less

Submitted 9 April, 2025; v1 submitted 19 December, 2024; originally announced December 2024.

Comments: 17 pages, 13 figures

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Authors: Hubert C. George, Mateusz T. Mądzik, Eric M. Henry, Andrew J. Wagner, Mohammad M. Islam, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew Curry, Michael K. Harper, Daniel Keith, Lester Lampert, Florian Luthi, Fahd A. Mohiyaddin, Sandra Murcia, Rohit Nair, Rambert Nahm, Aditi Nethwewala, Samuel Neyens, Bishnu Patra, Roy D. Raharjo, Carly Rogan, Rostyslav Savytskyy, Thomas F. Watson, Josh Ziegler , et al. (7 additional authors not shown)

Abstract: Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code name… ▽ More Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes. △ Less

Submitted 20 December, 2024; v1 submitted 21 October, 2024; originally announced October 2024.

Fast quantum gates for exchange-only qubits using simultaneous exchange pulses

Authors: Irina Heinz, Felix Borjans, Matthew J. Curry, Roza Kotlyar, Florian Luthi, Mateusz T. Mądzik, Fahd A. Mohiyaddin, Nathaniel Bishop, Guido Burkard

Abstract: The benefit of exchange-only qubits compared to other spin qubit types is the universal control using only voltage controlled exchange interactions between neighboring spins. As a compromise, qubit operations have to be constructed from non-orthogonal rotation axes of the Bloch sphere and result in rather long pulsing sequences. This paper aims to develop a faster implementation of single-qubit an… ▽ More The benefit of exchange-only qubits compared to other spin qubit types is the universal control using only voltage controlled exchange interactions between neighboring spins. As a compromise, qubit operations have to be constructed from non-orthogonal rotation axes of the Bloch sphere and result in rather long pulsing sequences. This paper aims to develop a faster implementation of single-qubit and two-qubit gates using simultaneous exchange pulses. We introduce pulse sequences in which single-qubit gates could be executed faster and show that subsequences on three spins in two-qubit gates could be implemented in fewer steps. Our findings can particularly speed up gate sequences for realistic idle times between sequential pulses and we show that this advantage increases with more interconnectivity of the quantum dots. We further demonstrate how a phase operation can introduce a relative phase between the computational and some of the leakage states, which can be advantageous for the construction of two-qubit gates. In addition to our theoretical analysis, we experimentally demonstrate and characterize a simultaneous exchange implementation of $X$ rotations in a SiGe quantum dot device and compare to the state of the art with sequential exchange pulses. △ Less

Submitted 14 May, 2025; v1 submitted 9 September, 2024; originally announced September 2024.

Probing single electrons across 300 mm spin qubit wafers

Authors: Samuel Neyens, Otto K. Zietz, Thomas F. Watson, Florian Luthi, Aditi Nethwewala, Hubert C. George, Eric Henry, Mohammad Islam, Andrew J. Wagner, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew J. Curry, Daniel Keith, Roza Kotlyar, Lester F. Lampert, Mateusz T. Madzik, Kent Millard, Fahd A. Mohiyaddin, Stefano Pellerano, Ravi Pillarisetty, Mick Ramsey, Rostyslav Savytskyy, Simon Schaal, Guoji Zheng , et al. (5 additional authors not shown)

Abstract: Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev… ▽ More Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices. △ Less

Submitted 3 May, 2024; v1 submitted 10 July, 2023; originally announced July 2023.

Comments: 33 pages, 4 figures, 10 extended data figures. Supplementary Information available under "Ancillary files."

Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers

Authors: D. P. Lozano, M. Mongillo, X. Piao, S. Couet, D. Wan, Y. Canvel, A. M. Vadiraj, Ts. Ivanov, J. Verjauw, R. Acharya, J. Van Damme, F. A. Mohiyaddin, J. Jussot, P. P. Gowda, A. Pacco, B. Raes, J. Van de Vondel, I. P. Radu, B. Govoreanu, J. Swerts, A. Potočnik, K. De Greve

Abstract: The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised… ▽ More The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance. △ Less

Submitted 30 November, 2022; v1 submitted 29 November, 2022; originally announced November 2022.

Comments: 20 pages, 10 figures

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Authors: M. Mohamed El Kordy Shehata, George Simion, Ruoyu Li, Fahd A. Mohiyaddin, Danny Wan, Massimo Mongillo, Bogdan Govoreanu, Iuliana Radu, Kristiaan De Greve, Pol Van Dorpe

Abstract: The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space i… ▽ More The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies. △ Less

Submitted 22 August, 2023; v1 submitted 10 October, 2022; originally announced October 2022.

Comments: 37 pages , 24 figures

Journal ref: PhysRevB. 108, 045305, 2023

Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms

Authors: J. Verjauw, R. Acharya, J. Van Damme, Ts. Ivanov, D. Perez Lozano, F. A. Mohiyaddin, D. Wan, J. Jussot, A. M. Vadiraj, M. Mongillo, M. Heyns, I. Radu, B. Govoreanu, A. Potočnik

Abstract: As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and li… ▽ More As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and lift-off techniques used for current, state-of-the art superconducting qubits are generally incompatible with modern day manufacturable processes. Here, we demonstrate a fully CMOS compatible qubit fabrication method, and show results from overlap Josephson junction devices with long coherence and relaxation times, on par with the state-of-the-art. We experimentally verify that Argon milling - the critical step during junction fabrication - and a subtractive etch process nevertheless result in qubits with average qubit energy relaxation times T1 reaching 70 $μ$s, with maximum values exceeding 100 $μ$s. Furthermore, we show that our results are still limited by surface losses and not, crucially, by junction losses. The presented fabrication process therefore heralds an important milestone towards a manufacturable 300 mm CMOS process for high-coherence superconducting qubits and has the potential to advance the scaling of superconducting device architectures. △ Less

Submitted 21 February, 2022; originally announced February 2022.

Comments: 13+6 pages, 3+6 figures, 0+2 tables

Journal ref: npj Quantum Inf 8, 93 (2022)

Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process

Authors: N. I. Dumoulin Stuyck, R. Li, C. Godfrin, A. Elsayed, S. Kubicek, J. Jussot, B. T. Chan, F. A. Mohiyaddin, M. Shehata, G. Simion, Y. Canvel, L. Goux, M. Heyns, B. Govoreanu, I. P. Radu

Abstract: Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO… ▽ More Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO$_2$ is proved by a 10K Hall mobility of $1.5 \cdot 10^4$ $cm^2$/Vs. Well-controlled sensors with low charge noise (3.6 $μ$eV/$\sqrt{\mathrm{Hz}}$ at 1 Hz) are used for charge sensing down to the last electron. We demonstrate excellent and reproducible interdot coupling control over nearly 2 decades (2-100 GHz). We show spin manipulation and single-shot spin readout, extracting a valley splitting energy of around 150 $μ$eV. These low-disorder, uniform qubit devices and 300mm fab integration pave the way for fast scale-up to large quantum processors. △ Less

Submitted 24 August, 2021; originally announced August 2021.

Comments: 2021 Symposium on VLSI Circuits. IEEE, 2021. Copyright 2021 by The Japan Society of Applied Physics. All rights reserved

Low dephasing and robust micromagnet designs for silicon spin qubits

Authors: N. I. Dumoulin Stuyck, F. A. Mohiyaddin, R. Li, M. Heyns, B. Govoreanu, I. P. Radu

Abstract: Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes q… ▽ More Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and position relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to 3-orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors, and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches. △ Less

Submitted 24 August, 2021; originally announced August 2021.

Comments: 5 pages, 4 figures

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

Authors: R. Li, N. I. Dumoulin Stuyck, S. Kubicek, J. Jussot, B. T. Chan, F. A. Mohiyaddin, A. Elsayed, M. Shehata, G. Simion, C. Godfrin, Y. Canvel, Ts. Ivanov, L. Goux, B. Govoreanu, I. P. Radu

Abstract: We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are charact… ▽ More We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor. △ Less

Submitted 7 February, 2021; originally announced February 2021.

Comments: 2020 IEEE International Electron Devices Meeting (IEDM), December 12-18, 2020

Journal ref: 2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4

Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation

Authors: Anton Potočnik, Steven Brebels, Jeroen Verjauw, Rohith Acharya, Alexander Grill, Danny Wan, Massimo Mongillo, Ruoyu Li, Tsvetan Ivanov, Steven Van Winckel, Fahd A. Mohiyaddin, Bogdan Govoreanu, Jan Craninckx, I. P. Radu

Abstract: Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of l… ▽ More Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers. △ Less

Submitted 14 September, 2021; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: 22+11 pages, 3+5 figures, 1+1 tables

Journal ref: Quantum Sci. Technol. 7 015004 (2022)

Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon

Authors: Kok Wai Chan, Harshad Sahasrabudhe, Wister Huang, Yu Wang, Henry C. Yang, Menno Veldhorst, Jason C. C. Hwang, Fahd A. Mohiyaddin, Fay E. Hudson, Kohei M. Itoh, Andre Saraiva, Andrea Morello, Arne Laucht, Rajib Rahman, Andrew S. Dzurak

Abstract: Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling… ▽ More Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between electronic wavefunctions in quantum dot systems, as long as they occupy neighbouring dots. An alternative route is the exploration of superexchange - the coupling between remote spins mediated by a third idle electron that bridges the distance between quantum dots. We experimentally demonstrate direct exchange coupling and provide evidence for second neighbour mediated superexchange in a linear array of three single-electron spin qubits in silicon, inferred from the electron spin resonance frequency spectra. We confirm theoretically through atomistic modeling that the device geometry only allows for sizeable direct exchange coupling for neighbouring dots, while next nearest neighbour coupling cannot stem from the vanishingly small tail of the electronic wavefunction of the remote dots, and is only possible if mediated. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Comments: 20 pages, 1.4MB, 4 figures

Journal ref: Nano Letters 2021, 21, 3, 1517-1522

Quantum Computing Circuits and Devices

Authors: Travis S. Humble, Himanshu Thapliyal, Edgard Munoz-Coreas, Fahd A. Mohiyaddin, Ryan S. Bennink

Abstract: The development of quantum computing technologies builds on the unique features of quantum physics while borrowing familiar principles from the design of conventional devices. We introduce the fundamental concepts required for designing and operating quantum computing devices by reviewing state of the art efforts to fabricate and demonstrate quantum gates and qubits. We summarize the near-term cha… ▽ More The development of quantum computing technologies builds on the unique features of quantum physics while borrowing familiar principles from the design of conventional devices. We introduce the fundamental concepts required for designing and operating quantum computing devices by reviewing state of the art efforts to fabricate and demonstrate quantum gates and qubits. We summarize the near-term challenges for devices based on semiconducting, superconducting, and trapped ion technologies with an emphasis on design tools as well as methods of verification and validation. We then discuss the generation and synthesis of quantum circuits for higher-order logic that can be carried out using quantum computing devices. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Comments: 18 Pages, 17 Figures

Quantum Accelerators for High-Performance Computing Systems

Authors: Keith A. Britt, Fahd A. Mohiyaddin, Travis S. Humble

Abstract: We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in p… ▽ More We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantum-accelerator framework that uses specialized kernels to offload select workloads while integrating with existing computing infrastructure. We elaborate on the role of the host operating system to manage these unique accelerator resources, the prospects for deploying quantum modules, and the requirements placed on the language hierarchy connecting these different system components. We draw on recent advances in the modeling and simulation of quantum computing systems with the development of architectures for hybrid high-performance computing systems and the realization of software stacks for controlling quantum devices. Finally, we present simulation results that describe the expected system-level behavior of high-performance computing systems composed from compute nodes with quantum processing units. We describe performance for these hybrid systems in terms of time-to-solution, accuracy, and energy consumption, and we use simple application examples to estimate the performance advantage of quantum acceleration. △ Less

Submitted 4 December, 2017; originally announced December 2017.

Comments: "If you want to go quickly, go alone. If you want to go far, go together."

Journal ref: 2017 IEEE International Conference on Rebooting Computing (ICRC), Washington, DC, USA, 2017, pp. 1-7

Robust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Stefanie Tenberg, Arne Laucht, Andrea Morello

Abstract: The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ De… ▽ More The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times, but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole ($>100$ Debye) at microwave frequencies for the nuclear spin. This is achieved by applying a magnetic drive to the spin of the donor-bound electron, while simultaneously controlling its charge state with electric fields. Under certain conditions, the microwave magnetic drive also renders the nuclear spin resonance frequency and electric dipole strongly insensitive to electrical noise, yielding long ($>1$ ms) dephasing times and robust gate operations. The nuclear spin could then be strongly coupled to microwave resonators, with a vacuum Rabi splitting of order 1 MHz, or to other nuclear spins, nearly half a micrometer apart, via strong electric dipole-dipole interaction. This work brings the $^{31}$P nuclear qubit into the realm of hybrid quantum systems and opens up new avenues in quantum information processing. △ Less

Submitted 13 August, 2018; v1 submitted 25 June, 2017; originally announced June 2017.

Comments: 10 pages, 5 figures. Expanded and improved version

Journal ref: Phys. Rev. B 98, 075313 (2018)

Strain-induced spin resonance shifts in silicon devices

Authors: J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet

Abstract: In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict d… ▽ More In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain. △ Less

Submitted 9 January, 2018; v1 submitted 25 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Applied 9, 044014 (2018)

A single-atom quantum memory in silicon

Authors: S. Freer, S. Simmons, A. Laucht, J. T. Muhonen, J. P. Dehollain, R. Kalra, F. A. Mohiyaddin, F. Hudson, K. M. Itoh, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, A. Morello

Abstract: Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex… ▽ More Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses. △ Less

Submitted 5 September, 2016; v1 submitted 25 August, 2016; originally announced August 2016.

Comments: 14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references

A Computational Workflow for Designing Silicon Donor Qubits

Authors: Travis S. Humble, M. Nance Ericson, Jacek Jakowski, Jingsong Huang, Charles Britton, Franklin G. Curtis, Eugene F. Dumitrescu, Fahd A. Mohiyaddin, Bobby G. Sumpter

Abstract: Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early device designs and establishing expectations for operational performance. However, the complex integrated material systems required by quantum device designs are… ▽ More Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early device designs and establishing expectations for operational performance. However, the complex integrated material systems required by quantum device designs are not captured by any single existing computational modeling method. We examine the development and analysis of a multi-staged computational workflow that can be used to design and characterize silicon donor qubit systems with modeling and simulation. Our approach integrates quantum computational chemistry calculations with electrostatic field solvers to perform detailed simulations of a phosphorus dopant in silicon. We show how atomistic details can be synthesized into an operational model for the logical gates that define quantum computation in this particular technology. The resulting computational workflow realizes a design tool for silicon donor qubits that can help verify and validate current and near-term experimental devices. △ Less

Submitted 3 August, 2016; originally announced August 2016.

Comments: 21 pages, 8 figures; A smart model is a good model

Journal ref: Nanotechnology 27, 424002 (2016)

A Dressed Spin Qubit in Silicon

Authors: Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, A. Morello

Abstract: Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp… ▽ More Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions

Authors: Fahd A. Mohiyaddin, Rachpon Kalra, Arne Laucht, Rajib Rahman, Gerhard Klimeck, Andrea Morello

Abstract: The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within th… ▽ More The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO$_2$ interface. We then estimate the required timescales and exchange couplings, and the level of noise that can be tolerated to achieve high fidelity transport. We also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport. △ Less

Submitted 23 February, 2016; originally announced February 2016.

Comments: 19 pages, 12 figures

Journal ref: Phys. Rev. B 94, 045314 (2016)

Silicon quantum processor with robust long-distance qubit couplings

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Vivien Schmitt, Stefanie Tenberg, Rajib Rahman, Gerhard Klimeck, Andrea Morello

Abstract: Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a physical platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require pre… ▽ More Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a physical platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and allows hundreds of nanometers inter-qubit distances, therefore facilitating fabrication using current technology. All qubit operations are performed via electrical means on the electron-nuclear spin states of a phosphorus donor. Single-qubit gates use low power electric drive at microwave frequencies, while fast two-qubit gates exploit electric dipole-dipole interactions. Microwave resonators allow for millimeter-distance entanglement and interfacing with photonic links. Sweet spots protect the qubits from charge noise up to second order, implying that all operations can be performed with error rates below quantum error correction thresholds, even without any active noise cancellation technique. △ Less

Submitted 9 March, 2017; v1 submitted 28 September, 2015; originally announced September 2015.

Journal ref: Nature Communications 8, 450 (2017)

Electrically controlling single spin qubits in a continuous microwave field

Authors: Arne Laucht, Juha T. Muhonen, Fahd A. Mohiyaddin, Rachpon Kalra, Juan P. Dehollain, Solomon Freer, Fay E. Hudson, Menno Veldhorst, Rajib Rahman, Gerhard Klimeck, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr… ▽ More Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Comments: Main paper: 13 pages, 4 figures. Supplementary information: 25 pages, 13 figures

Journal ref: Science Advances 1, 1500022 (2015)

Coherent Control of a Single Silicon-29 Nuclear Spin Qubit

Authors: Jarryd J. Pla, Fahd A. Mohiyaddin, Kuan Y. Tan, Juan P. Dehollain, Rajib Rahman, Gerhard Klimeck, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spi… ▽ More Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer. △ Less

Submitted 6 August, 2014; originally announced August 2014.

Journal ref: Phys. Rev. Lett. 113, 246801 (2014)

Circuit-quantum electrodynamics with direct magnetic coupling to single-atom spin qubits in isotopically enriched 28Si

Authors: Guilherme Tosi, Fahd A. Mohiyaddin, Hans Huebl, Andrea Morello

Abstract: Recent advances in silicon nanofabrication have allowed the manipulation of spin qubits that are extremely isolated from noise sources, being therefore the semiconductor equivalent of single atoms in vacuum. We investigate the possibility of directly coupling an electron spin qubit to a superconducting resonator magnetic vacuum field. By using resonators modified to increase the vacuum magnetic fi… ▽ More Recent advances in silicon nanofabrication have allowed the manipulation of spin qubits that are extremely isolated from noise sources, being therefore the semiconductor equivalent of single atoms in vacuum. We investigate the possibility of directly coupling an electron spin qubit to a superconducting resonator magnetic vacuum field. By using resonators modified to increase the vacuum magnetic field at the qubit location, and isotopically purified 28Si substrates, it is possible to achieve coupling rates faster than the single spin dephasing. This opens up new avenues for circuit-quantum electrodynamics with spins, and provides a pathway for dispersive read-out of spin qubits via superconducting resonators. △ Less

Submitted 26 August, 2014; v1 submitted 6 May, 2014; originally announced May 2014.

Journal ref: AIP Advances 4, 087122 (2014)

High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon

Authors: Arne Laucht, Rachpon Kalra, Juha T. Muhonen, Juan P. Dehollain, Fahd A. Mohiyaddin, Fay Hudson, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses.… ▽ More The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments. △ Less

Submitted 17 December, 2013; originally announced December 2013.

Comments: 4 pages, 2 figures