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Element-specific, non-destructive profiling of layered heterostructures
Authors:
Nicolò D'Anna,
Jamie Bragg,
Elizabeth Skoropata,
Nazareth Ortiz Hernández,
Aidan G. McConnell,
Maël Clémence,
Hiroki Ueda,
Procopios C. Constantinou,
Kieran Spruce,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Dario Ferreira Sanchez,
Daniel Grolimund,
Urs Staub,
Guy Matmon,
Simon Gerber,
Gabriel Aeppli
Abstract:
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high…
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Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($δ$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging.
Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $δ$-layers within silicon, and show that the sub-nm electronic thickness of the $δ$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.
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Submitted 2 October, 2024; v1 submitted 30 September, 2024;
originally announced October 2024.
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Emergence of highly coherent quantum subsystems of a noisy and dense spin system
Authors:
A. Beckert,
M. Grimm,
N. Wili,
R. Tschaggelar,
G. Jeschke,
G. Matmon,
S. Gerber,
M. Müller,
G. Aeppli
Abstract:
Quantum sensors and qubits are usually two-level systems (TLS), the quantum analogs of classical bits which assume binary values '0' or '1'. They are useful to the extent to which they can persist in quantum superpositions of '0' and '1' in real environments. However, such TLS are never alone in real materials and devices, and couplings to other degrees of freedom limit the lifetimes - called deco…
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Quantum sensors and qubits are usually two-level systems (TLS), the quantum analogs of classical bits which assume binary values '0' or '1'. They are useful to the extent to which they can persist in quantum superpositions of '0' and '1' in real environments. However, such TLS are never alone in real materials and devices, and couplings to other degrees of freedom limit the lifetimes - called decoherence times - of the superposition states. Decoherence occurs via two major routes - excitation hopping and fluctuating electromagnetic fields. Common mitigation strategies are based on material improvements, exploitation of clock states which couple only to second rather than first order to external perturbations, and reduction of interactions via extreme dilution of pure materials made from isotopes selected to minimize noise from nuclear spins. We demonstrate that for a dense TLS network in a noisy nuclear spin bath, we can take advantage of interactions to pass from hopping to fluctuation dominance, increasing decoherence times by almost three orders of magnitude. In the dilute rare-earth insulator LiY1-xTbxF4, Tb ions realize TLS characterized by a 30GHz splitting and readily implemented clock states. Dipolar interactions lead to coherent, localized pairs of Tb ions, that decohere due to fluctuating quantum mechanical ring-exchange interaction, sensing the slow dynamics of the surrounding, nearly localized Tb spins. The hopping and fluctuation regimes are sharply distinguished by their Rabi oscillations and the invisible vs. strong effect of classic 'error correcting' microwave pulse sequences. Laying open the decoherence mechanisms at play in a dense, disordered and noisy network of interacting TLS, our work expands the search space for quantum sensors and qubits to include clusters in dense, disordered materials, that can be explored for localization effects.
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Submitted 17 January, 2024; v1 submitted 3 October, 2022;
originally announced October 2022.
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Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Authors:
Nicolò D'Anna,
Dario Ferreira Sanchez,
Guy Matmon,
Jamie Bragg,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Marek Bartkowiak,
Y. Soh,
Daniel Grolimund,
Simon Gerber,
Gabriel Aeppli
Abstract:
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b…
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The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here we exploit X-ray fluorescence to create an element-specific image of As dopants in silicon, with dopant densities in absolute units and a resolution limited by the beam focal size (here $\sim1~μ$m), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunnelling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, dominated by weak localisation, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the $1.5\times10^{10}$ Sv ($1.5\times10^{16}$ Rad/cm$^{-2}$) exposure of the device to X-rays, all transport data were unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3$\%$ for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm.
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Submitted 14 April, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Precise determination of low energy electronuclear Hamiltonian for LiY$_{1-x}$Ho$_{x}$F$_{4}$
Authors:
A. Beckert,
R. I. Hermans,
M. Grimm,
J. R. Freeman,
E. H. Linfield,
A. G. Davies,
M. Müller,
H. Sigg,
S. Gerber,
G. Matmon,
G. Aeppli
Abstract:
We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly sp…
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We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly spaced hyperfine transitions originating from dipolar and quadrupolar hyperfine interactions. We provide refined crystal field parameters and extract the dipolar and quadrupolar hyperfine constants ${A_J=0.02703\pm0.00003}$ $\textrm{cm}^{-1}$ and ${B= 0.04 \pm0.01}$ $\textrm{cm}^{-1}$, respectively. Thereupon we determine all crystal-field energy levels and magnetic moments of the $^5I_8$ ground state manifold, including the (non-linear) hyperfine corrections. The latter match the measurement-based estimates. The scale of the non-linear hyperfine corrections sets an upper bound for the inhomogeneous line widths that would still allow for unique addressing of a selected hyperfine transition. e.g. for quantum information applications. Additionally, we establish the far-infrared, low-temperature refractive index of LiY$_{1-x}$Ho$_{x}$F$_{4}$.
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Submitted 16 December, 2020;
originally announced December 2020.
