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Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics
Authors:
Cheng Ji,
Robert M. Pettit,
Shobhit Gupta,
Gregory D. Grant,
Ignas Masiulionis,
Ananthesh Sundaresh,
Skylar Deckoff--Jones,
Max Olberding,
Manish K. Singh,
F. Joseph Heremans,
Supratik Guha,
Alan M. Dibos,
Sean E. Sullivan
Abstract:
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce…
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Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.
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Submitted 4 June, 2024;
originally announced June 2024.
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Optical and spin coherence of Er$^{3+}$ in epitaxial CeO$_2$ on silicon
Authors:
Jiefei Zhang,
Gregory D. Grant,
Ignas Masiulionis,
Michael T. Solomon,
Jasleen K. Bindra,
Jens Niklas,
Alan M. Dibos,
Oleg G. Poluektov,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom
Abstract:
Solid-state atomic defects with optical transitions in the telecommunication bands, potentially in a nuclear spin free environment, are important for applications in fiber-based quantum networks. Erbium ions doped in CeO$_2$ offer such a desired combination. Here we report on the optical homogeneous linewidth and electron spin coherence of Er$^{3+}$ ions doped in CeO$_2$ epitaxial film grown on a…
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Solid-state atomic defects with optical transitions in the telecommunication bands, potentially in a nuclear spin free environment, are important for applications in fiber-based quantum networks. Erbium ions doped in CeO$_2$ offer such a desired combination. Here we report on the optical homogeneous linewidth and electron spin coherence of Er$^{3+}$ ions doped in CeO$_2$ epitaxial film grown on a Si(111) substrate. The long-lived optical transition near 1530 nm in the environmentally-protected 4f shell of Er$^{3+}$ shows a narrow homogeneous linewidth of 440 kHz with an optical coherence time of 0.72 $μ$s at 3.6 K. The reduced nuclear spin noise in the host allows for Er$^{3+}$ electron spin polarization at 3.6 K, yielding an electron spin coherence of 0.66 $μ$s (in the isolated ion limit) and a spin relaxation of 2.5 ms. These findings indicate the potential of Er$^{3+}$:CeO$_2$ film as a valuable platform for quantum networks and communication applications.
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Submitted 28 September, 2023;
originally announced September 2023.
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Anomalous Purcell decay of strongly driven inhomogeneous emitters coupled to a cavity
Authors:
Michael T. Solomon,
Martin Koppenhöfer,
Mikhail Mamaev,
Cheng Ji,
Gregory Grant,
Ignas Masiulionis,
Sean E. Sullivan,
F. Joseph Heremans,
Supratik Guha,
David D. Awschalom,
Aashish A. Clerk,
Alan M. Dibos
Abstract:
We perform resonant fluorescence lifetime measurements on a nanocavity-coupled erbium ensemble as a function of cavity-laser detuning and pump power. Our measurements reveal an anomalous three-fold suppression of the ensemble Purcell factor at zero cavity detuning and high pump fluence. We capture qualitative aspects of this decay rate suppression using a Tavis-Cummings model of non-interacting sp…
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We perform resonant fluorescence lifetime measurements on a nanocavity-coupled erbium ensemble as a function of cavity-laser detuning and pump power. Our measurements reveal an anomalous three-fold suppression of the ensemble Purcell factor at zero cavity detuning and high pump fluence. We capture qualitative aspects of this decay rate suppression using a Tavis-Cummings model of non-interacting spins coupled to a common cavity.
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Submitted 7 March, 2024; v1 submitted 28 September, 2023;
originally announced September 2023.
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Nanocavity-mediated Purcell enhancement of Er in TiO$_2$ thin films grown via atomic layer deposition
Authors:
Cheng Ji,
Michael T. Solomon,
Gregory D. Grant,
Koichi Tanaka,
Muchuan Hua,
Jianguo Wen,
Sagar K. Seth,
Connor P. Horn,
Ignas Masiulionis,
Manish K. Singh,
Sean E. Sullivan,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha,
Alan M. Dibos
Abstract:
The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber…
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The use of trivalent erbium (Er$^{3+}$), typically embedded as an atomic defect in the solid-state, has widespread adoption as a dopant in telecommunications devices and shows promise as a spin-based quantum memory for quantum communication. In particular, its natural telecom C-band optical transition and spin-photon interface makes it an ideal candidate for integration into existing optical fiber networks without the need for quantum frequency conversion. However, successful scaling requires a host material with few intrinsic nuclear spins, compatibility with semiconductor foundry processes, and straightforward integration with silicon photonics. Here, we present Er-doped titanium dioxide (TiO$_2$) thin film growth on silicon substrates using a foundry-scalable atomic layer deposition process with a wide range of doping control over the Er concentration. Even though the as-grown films are amorphous, after oxygen annealing they exhibit relatively large crystalline grains, and the embedded Er ions exhibit the characteristic optical emission spectrum from anatase TiO$_2$. Critically, this growth and annealing process maintains the low surface roughness required for nanophotonic integration. Finally, we interface Er ensembles with high quality factor Si nanophotonic cavities via evanescent coupling and demonstrate a large Purcell enhancement (300) of their optical lifetime. Our findings demonstrate a low-temperature, non-destructive, and substrate-independent process for integrating Er-doped materials with silicon photonics. At high doping densities this platform can enable integrated photonic components such as on-chip amplifiers and lasers, while dilute concentrations can realize single ion quantum memories.
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Submitted 23 September, 2023;
originally announced September 2023.
