Flux Trapping Characterization for Superconducting Electronics Using a Cryogenic Widefield NV-Diamond Microscope
Authors:
Rohan T. Kapur,
Pauli Kehayias,
Sergey K. Tolpygo,
Adam A. Libson,
George Haldeman,
Collin N. Muniz,
Alex Wynn,
Nathaniel J. O'Connor,
Neel A. Parmar,
Ryan Johnson,
Andrew C. Maccabe,
John Cummings,
Justin L. Mallek,
Danielle A. Braje,
Jennifer M. Schloss
Abstract:
Magnetic flux trapping is a significant hurdle limiting reliability and scalability of superconducting electronics, yet tools for imaging flux vortices remain slow or insensitive. We present a cryogenic widefield NV-diamond magnetic microscope capable of rapid, micron-scale imaging of flux trapping in superconducting devices. Using this technique, we measure vortex expulsion fields in Nb thin film…
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Magnetic flux trapping is a significant hurdle limiting reliability and scalability of superconducting electronics, yet tools for imaging flux vortices remain slow or insensitive. We present a cryogenic widefield NV-diamond magnetic microscope capable of rapid, micron-scale imaging of flux trapping in superconducting devices. Using this technique, we measure vortex expulsion fields in Nb thin films and patterned strips, revealing a crossover in expulsion behavior between $10$ and $20~μ$m strip widths. The observed scaling agrees with theoretical models and suggests the influence of film defects on vortex expulsion dynamics. This instrument enables high-throughput magnetic characterization of superconducting materials and circuits, providing new insight for flux mitigation strategies in scalable superconducting electronics.
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Submitted 2 June, 2025;
originally announced June 2025.
Fabrication of superconducting through-silicon vias
Authors:
Justin L. Mallek,
Donna-Ruth W. Yost,
Danna Rosenberg,
Jonilyn L. Yoder,
Gregory Calusine,
Matt Cook,
Rabindra Das,
Alexandra Day,
Evan Golden,
David K. Kim,
Jeffery Knecht,
Bethany M. Niedzielski,
Mollie Schwartz,
Arjan Sevi,
Corey Stull,
Wayne Woods,
Andrew J. Kerman,
William D. Oliver
Abstract:
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challen…
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Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challenging. Here, we discuss our approach for realizing high-aspect-ratio superconducting TSVs\textemdash 10 $μ$m wide by 20 $μ$m long by 200 $μ$m deep\textemdash with densities of 100 electrically isolated TSVs per square millimeter. We characterize the DC and microwave performance of superconducting TSVs at cryogenic temperatures and demonstrate superconducting critical currents greater than 20 mA. These high-aspect-ratio, high critical current superconducting TSVs will enable high-density vertical signal routing within superconducting quantum processors.
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Submitted 15 March, 2021;
originally announced March 2021.