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Entanglement-Assisted Concatenated Quantum Codes: Parameters and Asymptotic Performance
Authors:
Jihao Fan,
Wei Cheng,
Gaojun Luo,
Zhou Li,
Meng Cao
Abstract:
Entanglement-assisted concatenated quantum codes (EACQCs) are constructed by concatenating two entanglement-assisted quantum error-correcting codes (EAQECCs). By selecting the inner and outer component codes carefully, it is able to construct state-of-the-art EACQCs with parameters better than previous quantum codes. In this work, we use almost maximum-distance-separable (MDS) codes and $\hbar$-MD…
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Entanglement-assisted concatenated quantum codes (EACQCs) are constructed by concatenating two entanglement-assisted quantum error-correcting codes (EAQECCs). By selecting the inner and outer component codes carefully, it is able to construct state-of-the-art EACQCs with parameters better than previous quantum codes. In this work, we use almost maximum-distance-separable (MDS) codes and $\hbar$-MDS codes as the outer codes to construct EACQCs. Because the range of code length of almost MDS and $\hbar$-MDS codes is much more free than that of the commonly used MDS codes. We derive several families of new EACQCs with parameters better than the previously best known EAQECCs and standard quantum error-correcting codes (QECCs) of the same length and net transmissions. Moreover, we demonstrate that EACQCs are with maximal entanglement if both the inner and outer component codes are with maximal entanglement. As a result, we construct three new maximal-entanglement EACQCs which have optimal parameters. In addition, we present several new maximal-entanglement EACQCs whose minimum distance is only one less than the minimum distance of the optimal codes. In particular, we propose two new families of asymptotically good maximal-entanglement EACQCs with explicit constructions by using entanglement-assisted quantum algebraic geometry codes as the outer codes. At last, we prove that EACQCs can attain the quantum Gilbert-Varshamov bound for EAQECCs asymptotically.
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Submitted 8 January, 2025;
originally announced January 2025.
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Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
Authors:
Rong-Long Ma,
Sheng-Kai Zhu,
Zhen-Zhen Kong,
Tai-Ping Sun,
Ming Ni,
Yu-Chen Zhou,
Yuan Zhou,
Gang Luo,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin block…
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High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin blockade in a Si-MOS double quantum dot device and demonstrate an average singlet-triplet state readout fidelity of 97.59% by the threshold method. We reveal the inherent deficiency of the threshold method for the relaxed triplet state classification and introduce machine learning as a relaxation-independent readout method to reduce the misjudgment. The readout fidelity for classifying the simulated single-shot traces can be improved to 99.67% by machine learning method, better than the threshold method of 97.54% which is consistent with the experimental result. This work indicates that machine learning method can be a strong potential candidate for alleviating the restrictions of stably achieving high-fidelity and high-accuracy singlet-triplet state readout in large-scale quantum computing.
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Submitted 18 September, 2023;
originally announced September 2023.
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Correcting on-chip distortion of control pulses with silicon spin qubits
Authors:
Ming Ni,
Rong-Long Ma,
Zhen-Zhen Kong,
Ning Chu,
Wei-Zhu Liao,
Sheng-Kai Zhu,
Chu Wang,
Gang Luo,
Di Liu,
Gang Cao,
Gui-Lei Wang,
Hai-Ou Li,
Guo-Ping Guo
Abstract:
Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion u…
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Pulse distortion, as one of the coherent error sources, hinders the characterization and control of qubits. In the semiconductor quantum dot system, the distortions on measurement pulses and control pulses disturb the experimental results, while no effective calibration procedure has yet been reported. Here, we demonstrate two different calibration methods to calibrate and correct the distortion using the two-qubit system as a detector. The two calibration methods have different correction accuracy and complexity. One is the coarse predistortion (CPD) method, with which the distortion is partly relieved. The other method is the all predistortion (APD) method, with which we measure the transfer function and significantly improve the exchange oscillation homogeneity. The two methods use the exchange oscillation homogeneity as the metric and are appropriate for any qubit that oscillates with a diabatic pulse. With the APD procedure, an arbitrary control waveform can be accurately delivered to the device, which is essential for characterizing qubits and improving gate fidelity.
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Submitted 18 September, 2023;
originally announced September 2023.
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Fractional revival on abelian Cayley graphs
Authors:
Xiwang Cao,
Gaojun Luo
Abstract:
Fractional revival, known as a quantum transport phenomenon, is essential for entanglement generation in quantum spin networks. The concept of fractional revival is a generalization of perfect state transfer and periodicity on graphs. In this paper, we propose a sufficient and necessary condition for abelian Cayley graphs having fractional revival between any two distinct vertices. With this chara…
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Fractional revival, known as a quantum transport phenomenon, is essential for entanglement generation in quantum spin networks. The concept of fractional revival is a generalization of perfect state transfer and periodicity on graphs. In this paper, we propose a sufficient and necessary condition for abelian Cayley graphs having fractional revival between any two distinct vertices. With this characterization, two general constructions of abelian Cayley graphs having fractional revival is presented. Meanwhile, we establish several new families of abelian Cayley graphs admitting fractional revival.
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Submitted 9 August, 2022;
originally announced August 2022.
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How Much Entanglement Does a Quantum Code Need?
Authors:
Gaojun Luo,
Martianus Frederic Ezerman,
Markus Grassl,
San Ling
Abstract:
In the setting of entanglement-assisted quantum error-correcting codes (EAQECCs), the sender and the receiver have access to pre-shared entanglement. Such codes promise better information rates or improved error handling properties. Entanglement incurs costs and must be judiciously calibrated in designing quantum codes with good performance, relative to their deployment parameters.
Revisiting kn…
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In the setting of entanglement-assisted quantum error-correcting codes (EAQECCs), the sender and the receiver have access to pre-shared entanglement. Such codes promise better information rates or improved error handling properties. Entanglement incurs costs and must be judiciously calibrated in designing quantum codes with good performance, relative to their deployment parameters.
Revisiting known constructions, we devise tools from classical coding theory to better understand how the amount of entanglement can be varied. We present three new propagation rules and discuss how each of them affects the error handling. Tables listing the parameters of the best performing qubit and qutrit EAQECCs that we can explicitly construct are supplied for reference and comparison.
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Submitted 5 September, 2022; v1 submitted 12 July, 2022;
originally announced July 2022.
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Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
Authors:
Fang-Ming Jing,
Zhuo-Zhi Zhang,
Guo-Quan Qin,
Gang Luo,
Gang Cao,
Hai-Ou Li,
Xiang-Xiang Song,
Guo-Ping Guo
Abstract:
Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures…
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Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.
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Submitted 15 April, 2022;
originally announced April 2022.
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Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
Authors:
Xin Zhang,
Rui-Zi Hu,
Hai-Ou Li,
Fang-Ming Jing,
Yuan Zhou,
Rong-Long Ma,
Ming Ni,
Gang Luo,
Gang Cao,
Gui-Lei Wang,
Xuedong Hu,
Hong-Wen Jiang,
Guang-Can Guo,
Guo-Ping Guo
Abstract:
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magne…
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In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.
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Submitted 24 June, 2020; v1 submitted 17 December, 2019;
originally announced December 2019.
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Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Authors:
Ke Wang,
Hai-Ou Li,
Gang Luo,
Xin Zhang,
Fang-Ming Jing,
Rui-Zi Hu,
Yuan Zhou,
He Liu,
Gui-Lei Wang,
Gang Cao,
Ming Xiao,
Hong-Wen Jiang,
Guo-Ping Guo
Abstract:
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen at…
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To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.
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Submitted 7 May, 2020; v1 submitted 4 May, 2019;
originally announced May 2019.
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Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates
Authors:
Da Wei,
Hai-Ou Li,
Gang Cao,
Gang Luo,
Zhi-Xiong Zheng,
Tao Tu,
Ming Xiao,
Guang-Can Guo,
Hong-Wen Jiang,
Guo-Ping Guo
Abstract:
Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in a…
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Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tc,the most important property of the artificial molecule. Here we report measurements of tc in an all-metal-gates-tuned graphene DQD. We find that tc can be controlled continuously about a factor of four by employing a single gate. Furthermore, tc, can be changed monotonically about another factor of four as electrons are gate-pumped into the dot one by one. The results suggest that the strength of tunnel coupling in etched DQDs can be varied in a rather broad range and in a controllable manner, which improves the outlook to use graphene as a base material for qubit applications.
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Submitted 24 July, 2013; v1 submitted 22 July, 2013;
originally announced July 2013.
