Roadmap on Atomic-scale Semiconductor Devices
Authors:
Steven R. Schofield,
Andrew J. Fisher,
Eran Ginossar,
Joseph W. Lyding,
Richard Silver,
Fan Fei,
Pradeep Namboodiri,
Jonathan Wyrick,
M. G. Masteghin,
D. C. Cox,
B. N. Murdin,
S. K Clowes,
Joris G. Keizer,
Michelle Y. Simmons,
Holly G. Stemp,
Andrea Morello,
Benoit Voisin,
Sven Rogge,
Robert A. Wolkow,
Lucian Livadaru,
Jason Pitters,
Taylor J. Z. Stock,
Neil J. Curson,
Robert E. Butera,
Tatiana V. Pavlova
, et al. (25 additional authors not shown)
Abstract:
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum dev…
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Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.
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Submitted 22 January, 2025; v1 submitted 8 January, 2025;
originally announced January 2025.
Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
Authors:
Zahra Shaterzadeh-Yazdi,
Lucian Livadaru,
Marco Taucer,
Josh Mutus,
Jason Pitters,
Robert A. Wolkow,
Barry C. Sanders
Abstract:
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond p…
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We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond pair by a capacitively coupled atomic-force-microscope tip in the presence of both a surface-parallel electrostatic potential bias between the two dangling bonds and a tunable midinfrared laser capable of inducing Rabi oscillations in the system. With a nonresonant laser, the time-averaged charge distribution in the dangling-bond pair is asymmetric as imposed by the bias. However, as the laser becomes resonant with the coherent electron tunneling in the biased pair the theory predicts that the time-averaged charge distribution becomes symmetric. This resonant symmetry effect should not only reveal the tunneling rate, but also the nature and rate of decoherence of single-electron dynamics in our system.
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Submitted 28 January, 2014; v1 submitted 28 May, 2013;
originally announced May 2013.
Dangling-bond charge qubit on a silicon surface
Authors:
Lucian Livadaru,
Peng Xue,
Zahra Shaterzadeh-Yazdi,
Gino A. DiLabio,
Josh Mutus,
Jason L. Pitters,
Barry C. Sanders,
Robert A. Wolkow
Abstract:
Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum co…
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Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect.
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Submitted 12 December, 2011; v1 submitted 9 October, 2009;
originally announced October 2009.
