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Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
Authors:
N. -J. Guo,
W. Liu,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -A. Wang,
X. -D. Zeng,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
Y. -T. Wang,
J. -S. Tang,
C. -F. Li,
G. -C. Guo
Abstract:
Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed to have unique superiority in quantum sensing since their atomatic thickness. Here, we demonstrate that the negatively boron charged vacancy (V…
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Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed to have unique superiority in quantum sensing since their atomatic thickness. Here, we demonstrate that the negatively boron charged vacancy (V$ _\text{B}^{-} $) with good spin properties in hexagonal boron nitride can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of V$ _\text{B}^{-} $ defects, showing zero-filed splitting of $ \sim $ 3.47 GHz. We compare the photoluminescence intensity and spin properties of V$ _\text{B}^{-} $ defects generated by different implantation parameters, such as fluence, energy and ion species. With proper parameters, we can create V$ _\text{B}^{-} $ defects successfully with high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for integrated hBN-based devices.
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Submitted 14 January, 2022; v1 submitted 25 May, 2021;
originally announced May 2021.
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Coherent dynamics of multi-spin $\rm V_B^-$ centers in hexagonal boron nitride
Authors:
W. Liu,
V. Ivády,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -A. Wang,
N. -J. Guo,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
X. Liu,
Z. -Q. Zhou Y. Dong,
X. -D. Chen,
F. -W. Sun,
Y. -T. Wang,
J. -S. Tang,
A. Gali,
C. -F. Li,
G. -C. Guo
Abstract:
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillatio…
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Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related dynamical phenomena of the negatively charged boron vacancy ($\rm V_B^-$) spins in hBN. We report on different dynamics of the $\rm V_B^-$ spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting the multiple-frequency dynamical oscillation like clear beat in Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of $\rm V_B^-$ and reveal that the nuclear spins can be driven via the strong electric-nuclear coupling existing in $\rm V_B^-$ center, which can be modulated by the magnetic field and microwave field.
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Submitted 1 October, 2022; v1 submitted 27 January, 2021;
originally announced January 2021.
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Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride
Authors:
W. Liu,
Z. -P. Li,
Y. -Z. Yang,
S. Yu,
Y. Meng,
Z. -C. Li,
N. -J. Guo,
F. -F. Yan,
Q. Li,
J. -F. Wang,
J. -S. Xu,
Y. -T. Wang,
J. -S. Tang,
C. -F. Li,
G. -C. Guo
Abstract:
Two-dimensional hexagonal boron nitride (hBN) has attracted large attentions as platforms for realizations for integrated nanophotonics and collective effort has been focused on the spin defect centers. Here, the temperature dependence of the resonance spectrum in the range of 5-600 K is investigated. The zero-field splitting (ZFS) parameter D is found to decrease monotonicly with increasing tempe…
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Two-dimensional hexagonal boron nitride (hBN) has attracted large attentions as platforms for realizations for integrated nanophotonics and collective effort has been focused on the spin defect centers. Here, the temperature dependence of the resonance spectrum in the range of 5-600 K is investigated. The zero-field splitting (ZFS) parameter D is found to decrease monotonicly with increasing temperature and can be described by Varshni empirical equation perfectly, while E almost does not change. We systematically study the differences among different hBN nanopowders and provide an evidence of edge effects on ODMR of VB- defects. Considering the proportional relation between D and reciprocal of lattice volume, the thermal expansion might be the dominant reason for energy-level shifts. We also demonstrate that the VB- defects still exist stably at least at 600 K. Moreover, we propose a scheme for detecting laser intensity using the VB- defects in hBN nanopowders, which is based on the obvious dependence of its D value on laser intensity. Our results are helpful to gain insight into the spin properties of VB- and for the realizations of miniaturized, integrated thermal sensor.
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Submitted 23 September, 2021; v1 submitted 25 January, 2021;
originally announced January 2021.
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Atom-Pair Tunneling and Quantum Phase Transition in Strong Interaction Regime
Authors:
J. -Q. Liang,
J. -L. Liu,
W. -D. Li,
Z. -J. Li
Abstract:
We propose a Hamiltonian of ultracold spinless atoms in optical lattices including the two-body interaction of nearest neighbors, which reduces to the Bose-Hubbard model in weak interaction limit. An atom-pair hoping term appearing in the new Hamiltonian explains naturally the recent experimental observation of correlated tunneling in a double-well trap with strong atom-atom interactions and mor…
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We propose a Hamiltonian of ultracold spinless atoms in optical lattices including the two-body interaction of nearest neighbors, which reduces to the Bose-Hubbard model in weak interaction limit. An atom-pair hoping term appearing in the new Hamiltonian explains naturally the recent experimental observation of correlated tunneling in a double-well trap with strong atom-atom interactions and moreover leads to a new dynamic process of atom-pair tunneling where strongly interacting atoms can tunnel back and forth as a fragmented pair. Finally a new dynamics of oscillations induced by the atom-pair tunneling is found in the strong interaction regime, where the Bose-Hubbard model gives rise to the insulator state with fixed time-averaged value of atom-occupation-number only. Quantum phase transitions between two quantum phases characterized by degenerate and non-degenerate ground states are shown to be coinciding with the Landau second-order phase transition theory. In the system of finite atom-number the degeneracy of ground states can be removed by quantum tunneling for the even-number of atoms but not for the odd-number.
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Submitted 22 March, 2009; v1 submitted 12 March, 2008;
originally announced March 2008.
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Relativistic Harmonic Oscillator
Authors:
Z. -F. Li,
J. J. Liu,
Wolfgang Lucha,
W. G. Ma,
F. F. Schoberl
Abstract:
We study the semirelativistic Hamiltonian operator composed of the relativistic kinetic energy and a static harmonic-oscillator potential in three spatial dimensions and construct, for bound states with vanishing orbital angular momentum, its eigenfunctions in compact form, i. e., as power series, with expansion coefficients determined by an explicitly given recurrence relation. The correspondin…
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We study the semirelativistic Hamiltonian operator composed of the relativistic kinetic energy and a static harmonic-oscillator potential in three spatial dimensions and construct, for bound states with vanishing orbital angular momentum, its eigenfunctions in compact form, i. e., as power series, with expansion coefficients determined by an explicitly given recurrence relation. The corresponding eigenvalues are fixed by the requirement of normalizability of the solutions.
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Submitted 20 September, 2005; v1 submitted 28 January, 2005;
originally announced January 2005.
