Showing 1–10 of 10 results for author: Lagutchev, A

Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation

Authors: Alexander Senichev, Zachariah O. Martin, Yongqiang Wang, Owen M. Matthiessen, Alexei Lagutchev, Han Htoon, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehen… ▽ More The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation and thermal annealing techniques. Guided by theoretical predictions, we assess the potential of Zr ions to create optically addressable spin-defects and employ Kr ions as an alternative approach that targets lattice defects without inducing chemical doping effects. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions. The emitter density increases with the ion fluence, and there is an optimal value for the high density of emitters with low AlN background fluorescence. Additionally, under shorter excitation wavelength of 405 nm, Zr-implanted AlN exhibits isolated point-like emitters, which can be related to Zr-based defect complexes. This study provides important insights into the formation and properties of single-photon emitters in aluminum nitride induced by heavy ion implantation, contributing to the advancement of the aluminum nitride platform for on-chip quantum photonic applications. △ Less

Submitted 25 January, 2024; originally announced January 2024.

Comments: The following article has been submitted to APL Quantum. After it is published, it will be found at AIP Publishing/APL Quantum

All-optical modulation with single-photons using electron avalanche

Authors: Demid V. Sychev, Peigang Chen, Yuheng Chen, Morris Yang, Colton Fruhling, Alexei Lagutchev, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: The distinctive characteristics of light, such as high-speed and low-loss propagation, low cross-talk and low power consumption, along with photons unique quantum properties, make it most suitable for various applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor, though, is the weak optical nonlinearity of conv… ▽ More The distinctive characteristics of light, such as high-speed and low-loss propagation, low cross-talk and low power consumption, along with photons unique quantum properties, make it most suitable for various applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor, though, is the weak optical nonlinearity of conventional media that poses challenges for the control of light with ultra-low intensities. In this work, we demonstrate all-optical modulation enabled by electron avalanche process in silicon, using a control beam with single-photon light intensities. The observed process corresponds to a record-high nonlinear refractive index of $n_{2}$~$1.3*10^{-2} m^2/W$, which is several orders of magnitude higher than the best known nonlinear optical materials. Our approach opens the possibility of gigahertz-speed, and potentially even faster, optical switching at the single-photon level, which could enable a family of novel on-chip photonic and quantum devices operating at room temperature. △ Less

Submitted 31 March, 2025; v1 submitted 18 December, 2023; originally announced December 2023.

Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

Authors: Zachariah O. Martin, Alexander Senichev, Samuel Peana, Benjamin J. Lawrie, Alexei S. Lagutchev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform. Here, the fundamental photophysical properties of these emitters are probed through measurements of op… ▽ More A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2K to 300K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent homogeneous broadening of the zero-phonon lines. At 4.2K, spectral diffusion was found to be the main broadening mechanism, while time-resolved spectroscopy measurements revealed homogeneously broadened zero-phonon lines with instrument-limited linewidths. △ Less

Submitted 25 January, 2023; originally announced January 2023.

Comments: 21 pages, 10 figures

Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics

Authors: Alexander Senichev, Samuel Peana, Zachariah O. Martin, Omer Yesilyurt, Demid Sychev, Alexei S. Lagutchev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the sing… ▽ More The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters. △ Less

Submitted 17 May, 2022; originally announced May 2022.

Comments: 10 pages, 5 figures

Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates

Authors: Xiaohui Xu, Zachariah O. Martin, Demid Sychev, Alexei S. Lagutchev, Yong Chen, Takashi Taniguchi, Kenji Watanabe, Vladimir M. Shalaev, Alexandra Boltasseva

Abstract: Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, the… ▽ More Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, they either rely on a substrate nanopatterning procedure that is not compatible with integrated photonic devices or utilize a radiation source that might cause unpredictable damage to hBN and underlying substrates. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip. The method is applied to thin hBN flakes (less than 25 nm in thickness) on flat silicon-dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPEs yields are above 30% by utilizing multiple indent sizes, and a maximum yield of 36% is demonstrated for the indent size of around 400 nm. Our results mark an important step towards the deterministic creation and integration of hBN SPEs with photonic and plasmonic on-chip devices. △ Less

Submitted 28 June, 2021; originally announced June 2021.

Comments: 31 pages, 14 figures

Room temperature single-photon emitters in silicon nitride

Authors: Alexander Senichev, Zachariah O. Martin, Samuel Peana, Demid Sychev, Xiaohui Xu, Alexei S. Lagutchev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observat… ▽ More Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 15 pages, 4 figures, and Supplementary Information

Chip-compatible quantum plasmonic launcher

Authors: Chin-Cheng Chiang, Simeon I. Bogdanov, Oksana A. Makarova, Xiaohui Xu, Soham Saha, Deesha Shah, Di Wang, Alexei S. Lagutchev, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: Integrated on-demand single-photon sources are critical for the implementation of photonic quantum information processing systems. To enable practical quantum photonic devices, the emission rates of solid-state quantum emitters need to be substantially enhanced and the emitted signal must be directly coupled to an on-chip circuitry. The photon emission rate speed-up is best achieved via coupling t… ▽ More Integrated on-demand single-photon sources are critical for the implementation of photonic quantum information processing systems. To enable practical quantum photonic devices, the emission rates of solid-state quantum emitters need to be substantially enhanced and the emitted signal must be directly coupled to an on-chip circuitry. The photon emission rate speed-up is best achieved via coupling to plasmonic antennas, while on-chip integration can be easily obtained by directly coupling emitters to photonic waveguides. The realization of practical devices requires that both the emission speed-up and efficient out-couping are achieved in a single architecture. Here, we propose a novel platform that effectively combines on-chip compatibility with high radiative emission rates, a quantum plasmonic launcher. The proposed launchers contain single nitrogen-vacancy (NV) centers in nanodiamonds as quantum emitters that offer record-high average fluorescence lifetime shortening factors of about 7000 times. Nanodiamonds with single NV are sandwiched between two silver films that couple more than half of the emission into in-plane propagating surface plasmon polaritons. This simple, compact, and scalable architecture represents a crucial step towards the practical realization of high-speed on-chip quantum networks. △ Less

Submitted 7 October, 2019; originally announced October 2019.

On-chip microwave-spin-plasmon interface (MSPI)

Authors: Mikhail Y. Shalaginov, Simeon I. Bogdanov, Alexei S. Lagutchev, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: On-chip scalable integration represents a major challenge for practical quantum devices. One particular challenge is to implement on-chip optical readout of spins in diamond. This readout requires simultaneous application of optical and microwave fields along with an efficient collection of fluorescence. The readout is typically accomplished via bulk optics and macroscopic microwave transmission s… ▽ More On-chip scalable integration represents a major challenge for practical quantum devices. One particular challenge is to implement on-chip optical readout of spins in diamond. This readout requires simultaneous application of optical and microwave fields along with an efficient collection of fluorescence. The readout is typically accomplished via bulk optics and macroscopic microwave transmission structures. We experimentally demonstrate an on-chip integrated structure for nitrogen vacancy (NV) spin-based applications, implemented in a single material layer with one patterning step. A nanodiamond with multiple NV centres is positioned at the end of the groove waveguide milled in a thick gold film. The gold film carries the microwave control signal while the groove waveguide acts as a fluorescence collector, partially filtering out the pump excitation. As a result, the device dimensions and fabrication complexity are substantially reduced. Our approach will foster further development of ultra-compact nanoscale quantum sensors and quantum information processing devices on a monolithic platform. NV centre-based nanoscale sensors are the most promising application of the developed interface. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Comments: 17 pages, 9 figures

Deterministic integration of single nitrogen-vacancy centers into nanopatch antennas

Authors: Simeon I. Bogdanov, Oksana A. Makarova, Alexei S. Lagutchev, Deesha Shah, Chin-Cheng Chiang, Soham Saha, Alexandr S. Baburin, Ilya A. Ryzhikov, Ilya A. Rodionov, Alexander V. Kildishev, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using variou… ▽ More Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using various self-assembly or random assembly techniques. Yet, the difficulty of controllably fabricate nanoantennas with the smallest mode sizes coupled to pre-characterized single emitters until now has remained a serious issue plaguing the development of quantum plasmonic devices. We demonstrate the transfer of nanodiamonds with single nitrogen-vacancy (NV) centers to an epitaxial silver substrate and their subsequent deterministic coupling to plasmonic gap nanoantennas. Through fine control of the assembled nanoantenna geometry, a dramatic shortening of the NV fluorescence lifetime was achieved. We furthermore show that by preselecting NV centers exhibiting a photostable spin contrast, a coherent spin dynamics can be measured in the coupled configuration. The demonstrated approach opens unique applications of plasmon-enhanced quantum emitters for integrated quantum information and sensing devices. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Comments: 12 pages, 4 figures

Ultrabright room-temperature single-photon emission from nanodiamond nitrogen-vacancy centers with sub-nanosecond excited-state lifetime

Authors: Simeon Bogdanov, Mikhail Y. Shalaginov, Alexei Lagutchev, Chin-Cheng Chiang, Deesha Shah, Alexander S. Baburin, Ilya A. Ryzhikov, Ilya A. Rodionov, Alexandra Boltasseva, Vladimir M. Shalaev

Abstract: Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of partic… ▽ More Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of particular interest for such applications. We demonstrate single-photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to nanosized gap plasmonic cavities with internal mode volumes about 10 000 times smaller than the cubic vacuum wavelength. The resulting structures features sub-nanosecond NV excited-state lifetimes and detected photon rates up to 50 million counts per second. Analysis of the fluorescence saturation allows the extraction of the multi-order excitation rate enhancement provided by the nanoantenna. Efficiency analysis shows that the NV center is producing up to 0.25 billion photons per second in the far-field. △ Less

Submitted 1 December, 2017; v1 submitted 26 November, 2017; originally announced November 2017.