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Unifying recent experiments on spin-valley locking in TMDC quantum dots
Authors:
Aakash Shandilya,
Sundeep Kapila,
Radha Krishnan,
Bent Weber,
Bhaskaran Muralidharan
Abstract:
The spin-valley or Kramers qubit promises significantly enhanced spin-valley lifetimes due to strong coupling of the electrons' spin to their momentum (valley) degrees of freedom. In transition metal dichalcogenides (TMDCs) such spin-valley locking is expected to be particularly strong owing to the significant intrinsic spin-orbit coupling strength. Very recently, a small number of experiments on…
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The spin-valley or Kramers qubit promises significantly enhanced spin-valley lifetimes due to strong coupling of the electrons' spin to their momentum (valley) degrees of freedom. In transition metal dichalcogenides (TMDCs) such spin-valley locking is expected to be particularly strong owing to the significant intrinsic spin-orbit coupling strength. Very recently, a small number of experiments on TMDC quantum dots have put forth evidence for spin-valley locking for the first time at the few-electron limit. Employing quantum transport theory, here we numerically simulate their ground- and excited-state transport spectroscopy signatures in a unified theoretical framework. In doing so, we reveal the operating conditions under which spin-valley locking occurs in TMDC quantum dots, thereby weaving the connection between intrinsic material properties and the experimental data under diverse conditions. Our simulations thus provide a predictive modeling tool for TMDC quantum dots at the few-electron limit allowing us to deduce from experiments the degree of spin-valley locking based on the SOC strength, inter-valley mixing, and the spin and valley $g$-factors. Our theoretical analysis provides an important milestone towards the next challenge of experimentally confirming valley-relaxation times using single-shot projective measurements
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Submitted 29 October, 2024;
originally announced October 2024.
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Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
Authors:
Radha Krishnan,
Beng Yee Gan,
Yu-Ling Hsueh,
A. M. Saffat-Ee Huq,
Jonathan Kenny,
Rajib Rahman,
Teck Seng Koh,
Michelle Y. Simmons,
Bent Weber
Abstract:
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit co…
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While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
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Submitted 24 April, 2024;
originally announced April 2024.
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Experimental demonstration of high-entropy time of arrival based optical QRNG qualifying stringent statistical tests
Authors:
Anindita Banerjee,
Anuj Sethia,
Vijayalaxmi Mogiligidda,
Rajesh Kumar Krishnan,
Meiyappan AR,
Sairam Rajamani,
Vivek Shenoy
Abstract:
We report a demonstration of a high-entropy optical quantum random number generator (QRNG) based on photon arrival time. We have implemented the scheme with high-speed and high-precision electronics with a time resolution of 1 ps generating 115 Mbps raw data. The random bit generation efficiency is 8 bits per detection. The experimental data is quite consistent with theoretical estimation showing…
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We report a demonstration of a high-entropy optical quantum random number generator (QRNG) based on photon arrival time. We have implemented the scheme with high-speed and high-precision electronics with a time resolution of 1 ps generating 115 Mbps raw data. The random bit generation efficiency is 8 bits per detection. The experimental data is quite consistent with theoretical estimation showing minimum bias. We apply a real-time information-theoretic randomness extractor to generate a final data rate of 109 Mbps. The randomness is rigorously evaluated against well-known statistical test suites of NIST, ENT, Diehard, TU-01 and Dieharder.
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Submitted 13 August, 2021;
originally announced August 2021.
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Hartman effect in presence of Aharanov Bohm flux
Authors:
Swarnali Bandopadhyay,
Raishma Krishnan,
A. M. Jayannavar
Abstract:
The Hartman effect for the tunneling particle implies the independence of group delay time on the opaque barrier width, with superluminal velocities as a consequence. This effect is further examined on a quantum ring geometry in the presence of Aharonov-Bohm flux. We show that while tunneling through an opaque barrier the group delay time for given incident energy becomes independent of the barr…
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The Hartman effect for the tunneling particle implies the independence of group delay time on the opaque barrier width, with superluminal velocities as a consequence. This effect is further examined on a quantum ring geometry in the presence of Aharonov-Bohm flux. We show that while tunneling through an opaque barrier the group delay time for given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux. The Hartman effect is thereby extended beyond one dimension and in the presence of Aharonov-Bohm flux.
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Submitted 3 December, 2003;
originally announced December 2003.
