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Efficient measure of information backflow with quasi-stochastic process
Authors:
Kelvin Onggadinata,
Teck Seng Koh
Abstract:
Characterization and quantification of non-Markovian dynamics in open quantum systems is a topical issue in the rapidly developing field of quantum computation and quantum communication. A standard approach based on the notion of information backflow detects the flow of information from the environment back to the system. Numerous measures of information backflow have been proposed using different…
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Characterization and quantification of non-Markovian dynamics in open quantum systems is a topical issue in the rapidly developing field of quantum computation and quantum communication. A standard approach based on the notion of information backflow detects the flow of information from the environment back to the system. Numerous measures of information backflow have been proposed using different definitions of distinguishability between pairs of quantum states. These measures, however, necessitate optimization over the state space which can be analytically challenging or numerically demanding. Here, we propose an alternative witness and measure of information backflow that is explicitly state-independent by utilizing the concept of quasiprobability representation and recent advances in the theory of majorization for quasiprobabilities. We illustrate its use over several paradigmatic examples, demonstrating consistent Markovian conditions with known results and also reported necessary and sufficient condition for qutrit system in random unitary channel. The paper concludes with discussions on the foundational implications of quantum dynamical evolution.
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Submitted 16 January, 2025;
originally announced January 2025.
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Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
Authors:
Radha Krishnan,
Beng Yee Gan,
Yu-Ling Hsueh,
A. M. Saffat-Ee Huq,
Jonathan Kenny,
Rajib Rahman,
Teck Seng Koh,
Michelle Y. Simmons,
Bent Weber
Abstract:
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit co…
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While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
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Submitted 24 April, 2024;
originally announced April 2024.
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High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation
Authors:
Guangzhao Yang,
Marek Gluza,
Si Yan Koh,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Bent Weber,
Hui Khoon Ng,
Teck Seng Koh
Abstract:
Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for th…
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Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for the DQD spin qubit within the rotating-wave approximation (RWA). Rapid gates demand strong coupling, but RWA breaks down when coupling strengths become significant relative to system frequencies. Therefore, understanding the detrimental impact of time-dependent terms ignored by RWA is critical for high-fidelity operation. Here, we go beyond RWA to study CZ gate fidelity for both DQD spin and charge qubits. We propose a novel parametric drive on the charge qubit that produces fewer time-dependent terms and show that it outperforms its spin counterpart. We find that drive amplitude - a parameter dropped in RWA - is critical for optimizing fidelity and map out high-fidelity regimes. Our results demonstrate the necessity of going beyond RWA in understanding how long-range gates can be realized in DQD qubits, with charge qubits offering considerable advantages in high-fidelity operation.
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Submitted 9 April, 2024;
originally announced April 2024.
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2022 Roadmap for Materials for Quantum Technologies
Authors:
Christoph Becher,
Weibo Gao,
Swastik Kar,
Christian Marciniak,
Thomas Monz,
John G. Bartholomew,
Philippe Goldner,
Huanqian Loh,
Elizabeth Marcellina,
Kuan Eng Johnson Goh,
Teck Seng Koh,
Bent Weber,
Zhao Mu,
Jeng-Yuan Tsai,
Qimin Yan,
Samuel Gyger,
Stephan Steinhauer,
Val Zwiller
Abstract:
Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturit…
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Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.
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Submitted 15 February, 2022;
originally announced February 2022.
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Ghost factors in Gauss-sum factorization with transmon qubits
Authors:
Lin Htoo Zaw,
Yuanzheng Paul Tan,
Long Hoang Nguyen,
Rangga P. Budoyo,
Kun Hee Park,
Zhi Yang Koh,
Alessandro Landra,
Christoph Hufnagel,
Yung Szen Yap,
Teck Seng Koh,
Rainer Dumke
Abstract:
A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previousl…
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A challenge in the Gauss sums factorization scheme is the presence of ghost factors - non-factors that behave similarly to actual factors of an integer - which might lead to the misidentification of non-factors as factors or vice versa, especially in the presence of noise. We investigate Type II ghost factors, which are the class of ghost factors that cannot be suppressed with techniques previously laid out in the literature. The presence of Type II ghost factors and the coherence time of the qubit set an upper limit for the total experiment time, and hence the largest factorizable number with this scheme. Discernability is a figure of merit introduced to characterize this behavior. We introduce preprocessing as a strategy to increase the discernability of a system, and demonstrate the technique with a transmon qubit. This can bring the total experiment time of the system closer to its decoherence limit, and increase the largest factorizable number.
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Submitted 8 December, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
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Two-qubit sweet spots for capacitively coupled exchange-only spin qubits
Authors:
MengKe Feng,
Lin Htoo Zaw,
Teck Seng Koh
Abstract:
The implementation of high fidelity two-qubit gates is a bottleneck in the progress towards universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the $S = 1/2$, $S_z = -1/2$ decoherence-free subspace -- the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and dem…
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The implementation of high fidelity two-qubit gates is a bottleneck in the progress towards universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the $S = 1/2$, $S_z = -1/2$ decoherence-free subspace -- the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and demonstrate theoretically, the existence of multiple two-qubit sweet spots (2QSS) in the parameter space of capacitively coupled EO qubits. Gate operations have the advantage of being all-electrical, but charge noise that couple to electrical parameters of the qubits cause decoherence. Assuming noise with a 1/f spectrum, two-qubit gate fidelities and times are calculated, which provide useful information on the noise threshold necessary for fault-tolerance. We study two-qubit gates at single and multiple parameter 2QSS. In particular, for two existing EO implementations -- the resonant exchange (RX) and the always-on exchange-only (AEON) qubits -- we compare two-qubit gate fidelities and times at positions in parameter space where the 2QSS are simultaneously single-qubit sweet spots (1QSS) for the RX and AEON. These results provide a potential route to the realization of high fidelity quantum computation.
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Submitted 22 August, 2021; v1 submitted 29 March, 2021;
originally announced March 2021.
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Coherent transfer of singlet-triplet qubit states in an architecture of triple quantum dots
Authors:
MengKe Feng,
Chang Jian Kwong,
Teck Seng Koh,
Leong Chuan Kwek
Abstract:
We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electrical control over the detuning energy of the quantum dots. The first is a pulse-gated scheme, requiring dc pulses and engineering of inter- and intra-dot Coulomb energies. The second scheme is based on the adiabatic theore…
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We propose two schemes to coherently transfer arbitrary quantum states of the two-electron singlet-triplet qubit across a chain of 3 quantum dots. The schemes are based on electrical control over the detuning energy of the quantum dots. The first is a pulse-gated scheme, requiring dc pulses and engineering of inter- and intra-dot Coulomb energies. The second scheme is based on the adiabatic theorem, requiring time-dependent control of the detuning energy through avoided crossings at a rate that the system remains in the ground state. We simulate the transfer fidelity using typical experimental parameters for silicon quantum dots. Our results give state transfer fidelities between $94.3\% < \mathcal{F} < 99.5\%$ at sub-ns gate times for the pulse-gated scheme and between $75.4\% < \mathcal{F} < 99.0 \%$ at tens of ns for the adiabatic scheme. Taking into account dephasing from charge noise, we obtain state transfer fidelities between $94.0\% < \mathcal{F} < 99.2\%$ for the pulse-gated scheme and between $64.9\% < \mathcal{F} < 93.6\%$ for the adiabatic scheme.
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Submitted 21 June, 2018; v1 submitted 27 February, 2016;
originally announced February 2016.
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High-fidelity gates in quantum dot spin qubits
Authors:
Teck Seng Koh,
S. N. Coppersmith,
Mark Friesen
Abstract:
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semic…
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Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance (LQR), and a gate-like process known as stimulated Raman adiabatic passage (STIRAP). These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling $g$ and the detuning $ε$, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity ($f$) for fixed $g$ as a function of the other control parameters; this yields an $f^\text{opt}(g)$ that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound $f^\text{max}$ that is specific to the qubit-gate combination. We show that similar gate fidelities ($ \sim 99.5$%) should be attainable for ST qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields $ΔB$ produced by nuclear spins.
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Submitted 6 December, 2013; v1 submitted 31 July, 2013;
originally announced July 2013.
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Coherent Quantum Oscillations in a Silicon Charge Qubit
Authors:
Zhan Shi,
C. B. Simmons,
Daniel. R. Ward,
J. R. Prance,
R. T. Mohr,
Teck Seng Koh,
John King Gamble,
Xian. Wu,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b…
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Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.
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Submitted 17 July, 2013; v1 submitted 2 August, 2012;
originally announced August 2012.
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Pulse-gated quantum dot hybrid qubit
Authors:
Teck Seng Koh,
John King Gamble,
Mark Friesen,
M. A. Eriksson,
S. N. Coppersmith
Abstract:
A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level crossings in a pulsed gating scheme, which decomposes the spin qubit into a series of charge transitions. We develop one and two-qubit dc quantum gates that are…
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A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level crossings in a pulsed gating scheme, which decomposes the spin qubit into a series of charge transitions. We develop one and two-qubit dc quantum gates that are simpler than the previously proposed ac gates. We obtain closed form solutions for the control sequences and show that these sub-nanosecond gates can achieve high fidelities.
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Submitted 23 July, 2012;
originally announced July 2012.
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A fast "hybrid" silicon double quantum dot qubit
Authors:
Zhan Shi,
C. B. Simmons,
J. R. Prance,
John King Gamble,
Teck Seng Koh,
Yun-Pil Shim,
Xuedong Hu,
D. E. Savage,
M. G. Lagally,
M. A. Eriksson,
Mark Friesen,
S. N. Coppersmith
Abstract:
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occ…
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We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.
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Submitted 30 October, 2011;
originally announced October 2011.
