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Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
Authors:
Rifat Ferdous,
Kok W. Chan,
Menno Veldhorst,
J. C. C. Hwang,
C. H. Yang,
Gerhard Klimeck,
Andrea Morello,
Andrew S. Dzurak,
Rajib Rahman
Abstract:
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our theoretical predictions with experiments on QDs at a Si/SiO$_2$ interf…
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We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our theoretical predictions with experiments on QDs at a Si/SiO$_2$ interface, in which we observe significant differences in Stark shifts between QDs in two different samples. We also experimentally observe variations in the $g$-factors of one-electron and three-electron spin qubits realized in three neighboring QDs on the same sample, at a level consistent with our calculations. The dephasing times of these qubits also vary, most likely due to their varying sensitivity to charge noise, resulting from different interface conditions. More importantly, from our calculations we show that by employing the anisotropic nature of the spin-orbit interaction (SOI) in a Si QD, we can minimize and control these variations. Ultimately, we predict that the dephasing times of the Si QD spin qubits will be anisotropic and can be improved by at least an order of magnitude, by aligning the external DC magnetic field towards specific crystal directions.
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Submitted 2 August, 2017; v1 submitted 10 March, 2017;
originally announced March 2017.
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Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
Authors:
Fahd A. Mohiyaddin,
Rachpon Kalra,
Arne Laucht,
Rajib Rahman,
Gerhard Klimeck,
Andrea Morello
Abstract:
The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within th…
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The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state quantum computer. Here, we model odd-sized donor chains in silicon under a range of experimental non-idealities, including variability of donor position within the chain. We show that the tolerance against donor placement inaccuracies is greatly improved by operating the spin chain in a mode where the electrons are confined at the Si-SiO$_2$ interface. We then estimate the required timescales and exchange couplings, and the level of noise that can be tolerated to achieve high fidelity transport. We also propose a protocol to calibrate and initialize the chain, thereby providing a complete guideline for realizing a functional donor chain and utilizing it for spin transport.
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Submitted 23 February, 2016;
originally announced February 2016.
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Silicon quantum processor with robust long-distance qubit couplings
Authors:
Guilherme Tosi,
Fahd A. Mohiyaddin,
Vivien Schmitt,
Stefanie Tenberg,
Rajib Rahman,
Gerhard Klimeck,
Andrea Morello
Abstract:
Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a physical platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require pre…
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Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a physical platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and allows hundreds of nanometers inter-qubit distances, therefore facilitating fabrication using current technology. All qubit operations are performed via electrical means on the electron-nuclear spin states of a phosphorus donor. Single-qubit gates use low power electric drive at microwave frequencies, while fast two-qubit gates exploit electric dipole-dipole interactions. Microwave resonators allow for millimeter-distance entanglement and interfacing with photonic links. Sweet spots protect the qubits from charge noise up to second order, implying that all operations can be performed with error rates below quantum error correction thresholds, even without any active noise cancellation technique.
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Submitted 9 March, 2017; v1 submitted 28 September, 2015;
originally announced September 2015.
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Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures
Authors:
K. Miao,
S. Sadasivam,
J. Charles,
G. Klimeck,
T. S. Fisher,
T. Kubis
Abstract:
Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient Büttiker probe concept to phonon NEGF an…
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Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method (NEGF) is known to serve this purpose very well, but is numerically very expensive. This work extends the very efficient Büttiker probe concept to phonon NEGF and discusses all implications of this method. Büttiker probe parameters are presented that reproduce within NEGF experimental phonon conductances of Si and Ge between 10K and 1000K. Results of this method in SiGe heterojunctions illustrate the impact of interface relaxation on the device heat conductance and the importance of inelastic scattering for the phonon distribution.
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Submitted 1 December, 2015; v1 submitted 26 August, 2015;
originally announced August 2015.
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In-surface confinement of topological insulator nanowire surface states
Authors:
Fan W. Chen,
Luis A. Jauregui,
Yaohua Tan,
Michael Manfra,
Gerhard Klimeck,
Yong P. Chen,
Tillmann Kubis
Abstract:
The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potentia…
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The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.
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Submitted 5 May, 2016; v1 submitted 14 May, 2015;
originally announced May 2015.
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Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon
Authors:
Muhammad Usman,
Charles D. Hill,
Rajib Rahman,
Gerhard Klimeck,
Michelle Y. Simmons,
Sven Rogge,
Lloyd C. L. Hollenberg
Abstract:
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fie…
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Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of central-cell corrections and non-static screening of the donor potential capable of describing the hyperfine interaction in the presence of both strain and electric fields in realistically sized devices. We establish and apply a theoretical framework, based on atomistic tight-binding theory, to quantitatively determine the strain and electric field dependent hyperfine couplings of donors. Our method is scalable to millions of atoms, and yet captures the strain effects with an accuracy level of DFT method. Excellent agreement with the available experimental data sets allow reliable investigation of the design space of multi-qubit architectures, based on both strain-only as well as hybrid (strain+field) control of qubits. The benefits of strain are uncovered by demonstrating that a hybrid control of qubits based on (001) compressive strain and in-plane (100 or 010) fields results in higher gate fidelities and/or faster gate operations, for all of the four donor species considered (P, As, Sb, and Bi). The comparison between different donor species in strained environments further highlights the trends of hyperfine shifts, providing predictions where no experimental data exists. Whilst faster gate operations are realisable with in-plane fields for P, As, and Sb donors, only for the Bi donor, our calculations predict faster gate response in the presence of both in-plane and out-of-plane fields, truly benefiting from the proposed planar field control mechanism of the hyperfine interactions.
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Submitted 23 April, 2015;
originally announced April 2015.
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Electrically controlling single spin qubits in a continuous microwave field
Authors:
Arne Laucht,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Rachpon Kalra,
Juan P. Dehollain,
Solomon Freer,
Fay E. Hudson,
Menno Veldhorst,
Rajib Rahman,
Gerhard Klimeck,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr…
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Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.
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Submitted 19 March, 2015;
originally announced March 2015.
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Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Authors:
Muhammad Usman,
Rajib Rahman,
Joe Salfi,
Juanita Bocquel,
Benoit Voisin,
Sven Rogge,
Gerhard Klimeck,
Lloyd L. C. Hollenberg
Abstract:
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric scr…
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Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter ($η_2$) from -1.3 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the static dielectric screening to -1.72 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of $η_2$ to -1.87 $\times$ 10$^{-3} μ$m$^2$/V$^2$, resulting in an excellent agreement of theory with the experimentally measured value of -1.9 $\pm$ 0.2 $\times$ 10$^{-3} μ$m$^2$/V$^2$. Based on our direct comparison of the calculations with the experiment, we conclude that the previously ignored non-static dielectric screening of the donor potential and the lattice strain significantly influence the donor wave function charge density and thereby leads to a better agreement with the available experimental data sets.
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Submitted 7 October, 2014;
originally announced October 2014.
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Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
Authors:
Jarryd J. Pla,
Fahd A. Mohiyaddin,
Kuan Y. Tan,
Juan P. Dehollain,
Rajib Rahman,
Gerhard Klimeck,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spi…
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Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.
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Submitted 6 August, 2014;
originally announced August 2014.
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Silicon Quantum Electronics
Authors:
Floris A. Zwanenburg,
Andrew S. Dzurak,
Andrea Morello,
Michelle Y. Simmons,
Lloyd C. L. Hollenberg,
Gerhard Klimeck,
Sven Rogge,
Susan N. Coppersmith,
Mark A. Eriksson
Abstract:
This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps inc…
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This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.
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Submitted 16 April, 2013; v1 submitted 22 June, 2012;
originally announced June 2012.
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Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties
Authors:
Muhammad Usman,
Vittorianna Tasco,
Maria Teresa Todaro,
Milena De Giorgi,
Eoin P. O'Reilly,
Gerhard Klimeck,
Adriana Passaseo
Abstract:
III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to repro…
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III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.
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Submitted 17 March, 2012;
originally announced March 2012.
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Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells
Authors:
Zhengping Jiang,
Neerav Kharche,
Timothy Boykin,
Gerhard Klimeck
Abstract:
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation…
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A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.
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Submitted 6 March, 2012; v1 submitted 18 October, 2011;
originally announced October 2011.
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Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
Authors:
Muhammad Usman,
Tomoya Inoue,
Yukihiro Harda,
Gerhard Klimeck,
Takashi Kita
Abstract:
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simul…
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Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simulations. The atomistic modeling and simulations allow us to include correct symmetry properties in the calculations of the optical spectra: a factor critical to explain the experimental evidence. The values of the degree of polarization (DOP) calculated from our model follows the trends of the experimental data. We also present detailed physical insight by examining strain profiles, band edges diagrams and wave function plots. Multi-directional PL measurements and calculations of the DOP reveal a unique property of InAs quantum dot stacks that the TE response is anisotropic in the plane of the stacks. Therefore a single value of the DOP is not sufficient to fully characterize the polarization response. We explain this anisotropy of the TE-modes by orientation of hole wave functions along the [-110] direction. Our results provide a new insight that isotropic polarization response measured in the experimental PL spectra is due to two factors: (i) TM[001]-mode contributions increase due to enhanced intermixing of HH and LH bands, and (ii) TE[110]-mode contributions reduce significantly due to hole wave function alignment along the [-110] direction. We also present optical spectra for various geometry configurations of quantum dot stacks to provide a guide to experimentalists for the design of multi-layer QD stacks for optical devices. Our results predict that the QD stacks with identical layers will exhibit lower values of the DOP than the stacks with non-identical layers.
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Submitted 2 June, 2011;
originally announced June 2011.
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Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
Authors:
SungGeun Kim,
Abhijeet Paul,
Mathieu Luisier,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally deriv…
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The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s* tight-binding model. The interface between the silicon and the silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function (ACVF). The oxide layer is modeled in the virtual crystal approximation (VCA) using fictitious SiO2 atoms. <110>-oriented nanowires with different diameters and randomly generated surface configurations are studied. The experimentally observed ON-current and the threshold voltage is quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental results.
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Submitted 3 February, 2011; v1 submitted 14 November, 2010;
originally announced November 2010.
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Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations
Authors:
Muhammad Usman,
Yui-Hong Matthias Tan,
Hoon Ryu,
Shaikh S. Ahmed,
Hubert Krenner,
Timothy B. Boykin,
Gerhard Klimeck
Abstract:
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explici…
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Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.
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Submitted 22 June, 2011; v1 submitted 18 August, 2010;
originally announced August 2010.
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Coherent electron transport by adiabatic passage in an imperfect donor chain
Authors:
Rajib Rahman,
Richard P. Muller,
James E. Levy,
Malcolm S. Carroll,
Gerhard Klimeck,
Andrew D. Greentree,
Lloyd C. L. Hollenberg
Abstract:
Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densiti…
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Coherent Tunneling Adiabatic Passage (CTAP) has been proposed as a long-range physical qubit transport mechanism in solid-state quantum computing architectures. Although the mechanism can be implemented in either a chain of quantum dots or donors, a 1D chain of donors in Si is of particular interest due to the natural confining potential of donors that can in principle help reduce the gate densities in solid-state quantum computing architectures. Using detailed atomistic modeling, we investigate CTAP in a more realistic triple donor system in the presence of inevitable fabrication imperfections. In particular, we investigate how an adiabatic pathway for CTAP is affected by donor misplacements, and propose schemes to correct for such errors. We also investigate the sensitivity of the adiabatic path to gate voltage fluctuations. The tight-binding based atomistic treatment of straggle used here may benefit understanding of other donor nanostructures, such as donor-based charge and spin qubits. Finally, we derive an effective 3 \times 3 model of CTAP that accurately resembles the voltage tuned lowest energy states of the multi-million atom tight-binding simulations, and provides a translation between intensive atomistic Hamiltonians and simplified effective Hamiltonians while retaining the relevant atomic-scale information. This method can help characterize multi-donor experimental structures quickly and accurately even in the presence of imperfections, overcoming some of the numeric intractabilities of finding optimal eigenstates for non-ideal donor placements.
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Submitted 5 August, 2010;
originally announced August 2010.
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On the Bandstructure Velocity and Ballistic Current of Ultra Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation and Bias
Authors:
Neophytos Neophytou,
Sung Geun Kim,
Gerhard Klimeck,
Hans Kosina
Abstract:
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretically examine the bandstructure carrier velocity and ballistic current in silicon nanowire (NW) transistors. Infinitely long, uniform, cylindrical and rectangular NWs, of cross sectional diameters/sides ranging from 3nm t…
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A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretically examine the bandstructure carrier velocity and ballistic current in silicon nanowire (NW) transistors. Infinitely long, uniform, cylindrical and rectangular NWs, of cross sectional diameters/sides ranging from 3nm to 12nm are considered. For a comprehensive analysis, n-type and p-type metal-oxide-semiconductor (NMOS and PMOS) NWs in [100], [110] and [111] transport orientations are examined. In general, physical cross section reduction increases velocities, either by lifting the heavy mass valleys, or significantly changing the curvature of the bands. The carrier velocities of PMOS [110] and [111] NWs are a strong function of diameter, with the narrower D=3nm wires having twice the velocities of the D=12nm NWs. The velocity in the rest of the NW categories shows only minor diameter dependence. This behavior is explained through features in the electronic structure of the silicon host material. The ballistic current, on the other hand, shows the least sensitivity with cross section in the cases where the velocity has large variations. Since the carrier velocity is a measure of the effective mass and reflects on the channel mobility, these results can provide insight into the design of NW devices with enhanced performance and performance tolerant to structure geometry variations. In the case of ballistic transport in high performance devices, the [110] NWs are the ones with both high NMOS and PMOS performance, as well as low on-current variations with cross section geometry variations.
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Submitted 21 June, 2010;
originally announced June 2010.
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Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
Authors:
Rajib Rahman,
Seung H. Park,
Timothy B. Boykin,
Gerhard Klimeck,
Sven Rogge,
Lloyd C. L. Hollenberg
Abstract:
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion at…
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The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.
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Submitted 19 May, 2009;
originally announced May 2009.
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Mapping donor electron wave function deformations at sub-Bohr orbit resolution
Authors:
Seung H. Park,
Rajib Rahman,
Gerhard Klimeck,
Lloyd C. L. Hollenberg
Abstract:
Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the ability to accurately characterize the deformation of the electron wave functions in these atom-based structures through electromagnetic field control. We present…
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Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the ability to accurately characterize the deformation of the electron wave functions in these atom-based structures through electromagnetic field control. We present a method for mapping the subtle changes that occur in the electron wave function through the measurement of the hyperfine tensor probed by 29Si impurities. Our results show that detecting the donor electron wave function deformation is possible with resolution at the sub-Bohr radius level.
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Submitted 25 August, 2009; v1 submitted 9 February, 2009;
originally announced February 2009.
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Final Report on ECCS/NSF Workshop on Quantum, Molecular and High Performance Modeling and Simulation for Devices and Systems (QMHP)
Authors:
Jonathan P. Dowling,
Gerhard Klimeck,
Paul Werbos
Abstract:
The National Science Foundation has identified a new thrust area in Quantum, Molecular and High Performance Modeling and Simulation for Devices and Systems (QMHP) in its core program. The main purpose of this thrust area is to capture scientific opportunities that result from new fundamental cross-cutting research involving three core research communities: (1) experts in modeling and simulation…
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The National Science Foundation has identified a new thrust area in Quantum, Molecular and High Performance Modeling and Simulation for Devices and Systems (QMHP) in its core program. The main purpose of this thrust area is to capture scientific opportunities that result from new fundamental cross-cutting research involving three core research communities: (1) experts in modeling and simulation of electronic devices and systems; (2) high performance computing relevant to devices and systems; and (3) the quantum many-body principles relevant to devices and systems. ECCS is especially interested in learning how work in these areas could enable whole new classes of systems or devices, beyond what is already under development in existing mainstream research. The workshop helped identify technical areas that will enable fundamental breakthroughs in the future. Modeling and simulation in the electronics and optoelectronics areas, in general, have already resulted in important fundamental scientific understanding and advances in design and development of devices and systems. With the increasing emphasis on the next generation of devices and systems at the nano, micro, and macro scales and the interdisciplinary nature of the research, it is imperative that we explore new mathematical models and simulation techniques. This workshop report provides a better understanding of unmet emerging new opportunities to improve modeling, simulation and design techniques for hybrid devices and systems. The purpose the QMHP workshop was to define the field and strengthen the focus of the thrust. The ultimate goal of the workshop was to produce a final report (this document) that will be posted on the web so that the NSF can use it to guide reviewers and researchers in this field.
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Submitted 26 October, 2007; v1 submitted 20 September, 2007;
originally announced September 2007.
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High precision quantum control of single donor spins in silicon
Authors:
Rajib Rahman,
Cameron J. Wellard,
Forrest R. Bradbury,
Marta Prada,
Jared H. Cole,
Gerhard Klimeck,
Lloyd C. L. Hollenberg
Abstract:
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark…
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The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.
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Submitted 15 May, 2007;
originally announced May 2007.
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Effect of electron-nuclear spin interactions on electron-spin qubits localized in self-assembled quantum dots
Authors:
Seungwon Lee,
Paul von Allmen,
Fabiano Oyafuso,
Gerhard Klimeck,
K. Birgitta Whaley
Abstract:
The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in a self-assembled quantum dot. The localized electron wave function is evaluated within the atomistic tight-binding model. The magnetic field generated by the nuclear spins is estimated in the presence of an inhomogeneous environment characterized by…
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The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in a self-assembled quantum dot. The localized electron wave function is evaluated within the atomistic tight-binding model. The magnetic field generated by the nuclear spins is estimated in the presence of an inhomogeneous environment characterized by a random nuclear spin configuration, by the dot-size distribution, by alloy disorder, and by interface disorder. Due to these inhomogeneities, the magnitude of the nuclear magnetic field varies from one qubit to another by the order of 100 G, 100 G, 10 G, and 0.1 G, respectively. The fluctuation of the magnetic field causes errors in exchange operations due to the inequality of the Zeeman splitting between two qubits. We show that the errors can be made lower than the quantum error threshold if an exchange energy larger than 0.1 meV is used for the operation.
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Submitted 16 March, 2004;
originally announced March 2004.
