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Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation
Authors:
Ray D. Chang,
Nana Shumiya,
Russell A. McLellan,
Yifan Zhang,
Matthew P. Bland,
Faranak Bahrami,
Junsik Mun,
Chenyu Zhou,
Kim Kisslinger,
Guangming Cheng,
Alexander C. Pakpour-Tabrizi,
Nan Yao,
Yimei Zhu,
Mingzhao Liu,
Robert J. Cava,
Sarang Gopalakrishnan,
Andrew A. Houck,
Nathalie P. de Leon
Abstract:
The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems (TLSs) in the surface tantalum oxide. Here, we demonstrat…
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The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems (TLSs) in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. We find that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, suggesting total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide TLS loss in superconducting qubits.
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Submitted 23 August, 2024;
originally announced August 2024.
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Surpassing millisecond coherence times in on-chip superconducting quantum memories by optimizing materials, processes, and circuit design
Authors:
Suhas Ganjam,
Yanhao Wang,
Yao Lu,
Archan Banerjee,
Chan U Lei,
Lev Krayzman,
Kim Kisslinger,
Chenyu Zhou,
Ruoshui Li,
Yichen Jia,
Mingzhao Liu,
Luigi Frunzio,
Robert J. Schoelkopf
Abstract:
The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode approach to characterizing energy losses in superconducting quantum circuits, with the goals of predicting device performance and improving coherence through ma…
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The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode approach to characterizing energy losses in superconducting quantum circuits, with the goals of predicting device performance and improving coherence through materials, process, and circuit design optimization. Using this approach, we measure significant reductions in surface and bulk dielectric losses by employing a tantalum-based materials platform and annealed sapphire substrates. With this knowledge we predict and experimentally verify the relaxation times of aluminum- and tantalum-based transmon qubits. We additionally optimize device geometry to maximize coherence within a coaxial tunnel architecture, and realize on-chip quantum memories with single-photon Ramsey times of 2.0$-$2.7 ms, limited by their energy relaxation times of 1.0$-$1.4 ms. To our knowledge this is the highest coherence achieved in an on-chip quantum memory, and demonstrates an advancement towards a more modular and compact coaxial circuit architecture for bosonic qubits with reproducibly high coherence.
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Submitted 14 September, 2023; v1 submitted 29 August, 2023;
originally announced August 2023.
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Microwave loss characterization using multi-mode superconducting resonators
Authors:
Chan U Lei,
Suhas Ganjam,
Lev Krayzman,
Archan Banerjee,
Kim Kisslinger,
Sooyeon Hwang,
Luigi Frunzio,
Robert J. Schoelkopf
Abstract:
Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials…
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Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. We find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thin-films significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.
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Submitted 2 May, 2023;
originally announced May 2023.
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Chemical profiles of the oxides on tantalum in state of the art superconducting circuits
Authors:
Russell A. McLellan,
Aveek Dutta,
Chenyu Zhou,
Yichen Jia,
Conan Weiland,
Xin Gui,
Alexander P. M. Place,
Kevin D. Crowley,
Xuan Hoang Le,
Trisha Madhavan,
Youqi Gang,
Lukas Baker,
Ashley R. Head,
Iradwikanari Waluyo,
Ruoshui Li,
Kim Kisslinger,
Adrian Hunt,
Ignace Jarrige,
Stephen A. Lyon,
Andi M. Barbour,
Robert J. Cava,
Andrew A. Houck,
Steven L. Hulbert,
Mingzhao Liu,
Andrew L. Walter
, et al. (1 additional authors not shown)
Abstract:
Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently…
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Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.
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Submitted 20 January, 2023; v1 submitted 11 January, 2023;
originally announced January 2023.
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Microscopic Relaxation Channels in Materials for Superconducting Qubits
Authors:
Anjali Premkumar,
Conan Weiland,
Sooyeon Hwang,
Berthold Jaeck,
Alexander P. M. Place,
Iradwikanari Waluyo,
Adrian Hunt,
Valentina Bisogni,
Jonathan Pelliciari,
Andi Barbour,
Mike S. Miller,
Paola Russo,
Fernando Camino,
Kim Kisslinger,
Xiao Tong,
Mark S. Hybertsen,
Andrew A. Houck,
Ignace Jarrige
Abstract:
Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabr…
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Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
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Submitted 6 April, 2020;
originally announced April 2020.
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Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks
Authors:
Igal Bayn,
Edward H. Chen,
Matthew E. Trusheim,
Luozhou Li,
Tim Schröder,
Ophir Gaathon,
Ming Lu,
Aaron Stein,
Mingzhao Liu,
Kim Kisslinger,
Hannah Clevenson,
Dirk Englund
Abstract:
A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ~20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ~1 nm. Super-resoluti…
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A central challenge in developing magnetically coupled quantum registers in diamond is the fabrication of nitrogen vacancy (NV) centers with localization below ~20 nm to enable fast dipolar interaction compared to the NV decoherence rate. Here, we demonstrate the targeted, high throughput formation of NV centers using masks with a thickness of 270 nm and feature sizes down to ~1 nm. Super-resolution imaging resolves NVs with a full-width maximum distribution of $26\pm7$ nm and a distribution of NV-NV separations of $16\pm5$ nm.
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Submitted 19 December, 2014;
originally announced December 2014.
