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Native-oxide-passivated trilayer junctions for superconducting qubits
Authors:
Pankaj Sethi,
Om Prakash,
Jukka-Pekka Kaikkonen,
Mikael Kervinen,
Elsa T. Mannila,
Mário Ribeiro,
Debopam Datta,
Christopher W. Förbom,
Jorden Senior,
Renan P. Loreto,
Joel Hätinen,
Klaara Viisanen,
Jukka I. Väyrynen,
Alberto Ronzani,
Antti Kemppinen,
Visa Vesterinen,
Mika Prunnila,
Joonas Govenius
Abstract:
Superconducting qubits in today's quantum processing units are typically fabricated with angle-evaporated aluminum--aluminum-oxide--aluminum Josephson junctions. However, there is an urgent need to overcome the limited reproducibility of this approach when scaling up the number of qubits and junctions. Fabrication methods based on subtractive patterning of superconductor--insulator--superconductor…
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Superconducting qubits in today's quantum processing units are typically fabricated with angle-evaporated aluminum--aluminum-oxide--aluminum Josephson junctions. However, there is an urgent need to overcome the limited reproducibility of this approach when scaling up the number of qubits and junctions. Fabrication methods based on subtractive patterning of superconductor--insulator--superconductor trilayers, used for more classical large-scale Josephson junction circuits, could provide the solution but they in turn often suffer from lossy dielectrics incompatible with high qubit coherence. In this work, we utilize native aluminum oxide as a sidewall passivation layer for junctions based on aluminum--aluminum-oxide--niobium trilayers, and use such junctions in qubits. We design the fabrication process such that the few-nanometer-thin native oxide is not exposed to oxide removal steps that could increase its defect density or hinder its ability to prevent shorting between the leads of the junction. With these junctions, we design and fabricate transmon-like qubits and measure time-averaged coherence times up to 30 $μ$s at a qubit frequency of 5 GHz, corresponding to a qubit quality factor of one million. Our process uses subtractive patterning and optical lithography on wafer scale, enabling high throughput in patterning. This approach provides a scalable path toward fabrication of superconducting qubits on industry-standard platforms.
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Submitted 4 April, 2025;
originally announced April 2025.
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In-situ electro-optic sampling of microwave signals under cryogenic conditions and for superconducting applications
Authors:
Shekhar Priyadarshi,
Rinis Ferizaj,
Oliver Kieler,
Alexander Fernandez Scarioni,
Judith Felgner,
Abdulrahman Widaa,
Johannes Kohlmann,
Thomas Fordell,
Jaani Nissilä,
Antti Kemppinen,
Mark Bieler
Abstract:
We demonstrate a cryogenic electro-optic sampling (EOS) setup that allows for the measurement of microwave signals at arbitrary positions on a cryogenic chip-scale device. We use a Josephson Arbitrary Waveform Synthesizer (JAWS) to generate quantum-accurate voltage signals and measure them with the EOS setup, allowing for the calibration of its response, yielding traceability of the microwave meas…
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We demonstrate a cryogenic electro-optic sampling (EOS) setup that allows for the measurement of microwave signals at arbitrary positions on a cryogenic chip-scale device. We use a Josephson Arbitrary Waveform Synthesizer (JAWS) to generate quantum-accurate voltage signals and measure them with the EOS setup, allowing for the calibration of its response, yielding traceability of the microwave measurements to a quantum standard. We use the EOS setup to determine the time-domain response of ultrafast cryogenic photodiodes and the electrical reflection coefficient, i.e., the S11 scattering parameter, in a superconducting transmission line. Finally, we introduce an optical femtosecond pulse source which can be used to study the fidelity of superconducting transmission lines and terminations, as well as reflections from elements like Josephson junction arrays imbedded in them.
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Submitted 2 September, 2025; v1 submitted 31 October, 2024;
originally announced November 2024.
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Phonon-blocked junction refrigerators for cryogenic quantum devices
Authors:
E. Mykkänen,
J. S. Lehtinen,
A. Ronzani,
A. Kemppinen,
A. Alkurdi,
P. -O. Chapuis,
M. Prunnila
Abstract:
Refrigeration is an important enabler for quantum technology. The very low energy of the fundamental excitations typically utilized in quantum technology devices and systems requires temperature well below 1 K. Expensive cryostats are utilized in reaching sub-1 K regime and solid-state cooling solutions would revolutionize the field. New electronic micro-coolers based on phonon-blocked semiconduct…
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Refrigeration is an important enabler for quantum technology. The very low energy of the fundamental excitations typically utilized in quantum technology devices and systems requires temperature well below 1 K. Expensive cryostats are utilized in reaching sub-1 K regime and solid-state cooling solutions would revolutionize the field. New electronic micro-coolers based on phonon-blocked semiconductor-superconductor junctions could provide a viable route to such miniaturization. Here, we investigate the performance limits of these junction refrigerators.
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Submitted 13 September, 2022;
originally announced September 2022.
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Supporting quantum technologies with an ultra-low loss silicon photonics platform
Authors:
Matteo Cherchi,
Arijit Bera,
Antti Kemppinen,
Jaani Nissilä,
Kirsi Tappura,
Marco Caputo,
Lauri Lehtimäki,
Janne Lehtinen,
Joonas Govenius,
Tomi Hassinen,
Mika Prunnila,
Timo Aalto
Abstract:
Photonic integrated circuits (PICs) are expected to play a significant role in the ongoing second quantum revolution, thanks to their stability and scalability. Still, major upgrades are needed for available PIC platforms to meet the demanding requirements of quantum devices. In this paper, we present a review of our recent progress in upgrading an unconventional silicon photonics platform towards…
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Photonic integrated circuits (PICs) are expected to play a significant role in the ongoing second quantum revolution, thanks to their stability and scalability. Still, major upgrades are needed for available PIC platforms to meet the demanding requirements of quantum devices. In this paper, we present a review of our recent progress in upgrading an unconventional silicon photonics platform towards such goal, including ultra-low propagation losses, low fibre coupling losses, integration of superconducting elements, Faraday rotators, fast and efficient detectors, as well as phase modulators with low loss and/or low energy consumption. We show the relevance of our developments and of our vision in two main applications: quantum key distribution - to achieve significantly higher key rates and large-scale deployment - and cryogenic quantum computers - to replace electrical connections to the cryostat with optical fibres.
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Submitted 15 February, 2023; v1 submitted 12 January, 2022;
originally announced January 2022.
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Single-electron shuttle based on a silicon quantum dot
Authors:
K. W. Chan,
M. Mottonen,
A. Kemppinen,
N. S. Lai,
K. Y. Tan,
W. H. Lim,
A. S. Dzurak
Abstract:
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead…
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We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.
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Submitted 5 October, 2011; v1 submitted 30 March, 2011;
originally announced March 2011.