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Showing 1–5 of 5 results for author: Kemppinen, A

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  1. arXiv:2504.03481  [pdf, other

    quant-ph

    Native-oxide-passivated trilayer junctions for superconducting qubits

    Authors: Pankaj Sethi, Om Prakash, Jukka-Pekka Kaikkonen, Mikael Kervinen, Elsa T. Mannila, Mário Ribeiro, Debopam Datta, Christopher W. Förbom, Jorden Senior, Renan P. Loreto, Joel Hätinen, Klaara Viisanen, Jukka I. Väyrynen, Alberto Ronzani, Antti Kemppinen, Visa Vesterinen, Mika Prunnila, Joonas Govenius

    Abstract: Superconducting qubits in today's quantum processing units are typically fabricated with angle-evaporated aluminum--aluminum-oxide--aluminum Josephson junctions. However, there is an urgent need to overcome the limited reproducibility of this approach when scaling up the number of qubits and junctions. Fabrication methods based on subtractive patterning of superconductor--insulator--superconductor… ▽ More

    Submitted 4 April, 2025; originally announced April 2025.

  2. arXiv:2411.00162  [pdf

    physics.optics cond-mat.supr-con quant-ph

    In-situ electro-optic sampling of microwave signals under cryogenic conditions and for superconducting applications

    Authors: Shekhar Priyadarshi, Rinis Ferizaj, Oliver Kieler, Alexander Fernandez Scarioni, Judith Felgner, Abdulrahman Widaa, Johannes Kohlmann, Thomas Fordell, Jaani Nissilä, Antti Kemppinen, Mark Bieler

    Abstract: We demonstrate a cryogenic electro-optic sampling (EOS) setup that allows for the measurement of microwave signals at arbitrary positions on a cryogenic chip-scale device. We use a Josephson Arbitrary Waveform Synthesizer (JAWS) to generate quantum-accurate voltage signals and measure them with the EOS setup, allowing for the calibration of its response, yielding traceability of the microwave meas… ▽ More

    Submitted 2 September, 2025; v1 submitted 31 October, 2024; originally announced November 2024.

    Comments: 21 pages, 7 figures

  3. Phonon-blocked junction refrigerators for cryogenic quantum devices

    Authors: E. Mykkänen, J. S. Lehtinen, A. Ronzani, A. Kemppinen, A. Alkurdi, P. -O. Chapuis, M. Prunnila

    Abstract: Refrigeration is an important enabler for quantum technology. The very low energy of the fundamental excitations typically utilized in quantum technology devices and systems requires temperature well below 1 K. Expensive cryostats are utilized in reaching sub-1 K regime and solid-state cooling solutions would revolutionize the field. New electronic micro-coolers based on phonon-blocked semiconduct… ▽ More

    Submitted 13 September, 2022; originally announced September 2022.

    Comments: 5 pages, 3 figures, published in 2020 International Electron Devices Meeting (IEDM)

    Journal ref: IEEE International Electron Devices Meeting (IEDM), 2020, pp. 25.8.1-25.8.4

  4. arXiv:2201.04715  [pdf

    physics.optics physics.app-ph quant-ph

    Supporting quantum technologies with an ultra-low loss silicon photonics platform

    Authors: Matteo Cherchi, Arijit Bera, Antti Kemppinen, Jaani Nissilä, Kirsi Tappura, Marco Caputo, Lauri Lehtimäki, Janne Lehtinen, Joonas Govenius, Tomi Hassinen, Mika Prunnila, Timo Aalto

    Abstract: Photonic integrated circuits (PICs) are expected to play a significant role in the ongoing second quantum revolution, thanks to their stability and scalability. Still, major upgrades are needed for available PIC platforms to meet the demanding requirements of quantum devices. In this paper, we present a review of our recent progress in upgrading an unconventional silicon photonics platform towards… ▽ More

    Submitted 15 February, 2023; v1 submitted 12 January, 2022; originally announced January 2022.

    Comments: 24 pages, 14 figures, 159 references

  5. arXiv:1103.5891  [pdf, other

    quant-ph cond-mat.mtrl-sci

    Single-electron shuttle based on a silicon quantum dot

    Authors: K. W. Chan, M. Mottonen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, A. S. Dzurak

    Abstract: We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead… ▽ More

    Submitted 5 October, 2011; v1 submitted 30 March, 2011; originally announced March 2011.

    Journal ref: Appl. Phys. Lett. 98, 212103 (2011)