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Coulomb sensing of single ballistic electrons
Authors:
J. D. Fletcher,
W. Park,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
H. -S. Sim,
M. Kataoka
Abstract:
While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed Coulomb collisions of counterpropagating electrons in a beam splitter, giving time resolved control of interactions between single electrons. Here we use remote…
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While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed Coulomb collisions of counterpropagating electrons in a beam splitter, giving time resolved control of interactions between single electrons. Here we use remote Coulomb interactions to demonstrate a scheme for sensing single ballistic electrons. We show that interactions are highly controllable via electron energy and emission timing. We use a weakly-coupled `sensing' regime to characterise the nanoscale potential landscape of the beam splitter and the strength of the Coulomb interaction, and show multi-electron sensing with picosecond resolution.
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Submitted 20 December, 2024;
originally announced December 2024.
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Fast characterization of multiplexed single-electron pumps with machine learning
Authors:
N. Schoinas,
Y. Rath,
S. Norimoto,
W. Xie,
P. See,
J. P. Griffiths,
C. Chen,
D. A. Ritchie,
M. Kataoka,
A. Rossi,
I. Rungger
Abstract:
We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease…
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We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps.
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Submitted 17 September, 2024; v1 submitted 31 May, 2024;
originally announced May 2024.
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Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling
Authors:
Hermann Edlbauer,
Junliang Wang,
Thierry Crozes,
Pierre Perrier,
Seddik Ouacel,
Clément Geffroy,
Giorgos Georgiou,
Eleni Chatzikyriakou,
Antonio Lacerda-Santos,
Xavier Waintal,
D. Christian Glattli,
Preden Roulleau,
Jayshankar Nath,
Masaya Kataoka,
Janine Splettstoesser,
Matteo Acciai,
Maria Cecilia da Silva Figueira,
Kemal Öztas,
Alex Trellakis,
Thomas Grange,
Oleg M. Yevtushenko,
Stefan Birner,
Christopher Bäuerle
Abstract:
The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological…
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The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological challenges of flying qubits that are currently faced by academia and quantum enterprises, we underline the relevance of interdisciplinary cooperation to move emerging quantum industry forward. The review consists of two main sections:
Pathways towards the electron flying qubit: We address three routes of single-electron transport in GaAs-based devices focusing on surface acoustic waves, hot-electron emission from quantum dot pumps and Levitons. For each approach, we discuss latest experimental results and point out how numerical simulations facilitate engineering the electron flying qubit.
Numerical modelling of quantum devices: We review the full stack of numerical simulations needed for fabrication of the flying qubits. Choosing appropriate models, examples of basic quantum mechanical simulations are explained in detail. We discuss applications of open-source (KWANT) and the commercial (nextnano) platforms for modelling the flying qubits. The discussion points out the large relevance of software tools to design quantum devices tailored for efficient operation.
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Submitted 4 July, 2022;
originally announced July 2022.
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Single-Hole Pump in Germanium
Authors:
A. Rossi,
N. W. Hendrickx,
A. Sammak,
M. Veldhorst,
G. Scappucci,
M. Kataoka
Abstract:
Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and speed of operation, in the past decade there has been a focus on semiconductor-based devices. The use of a variety of semiconductor materials enables the univer…
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Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach the metrological requirements in terms of both accuracy and speed of operation, in the past decade there has been a focus on semiconductor-based devices. The use of a variety of semiconductor materials enables the universality of charge pump devices to be tested, a highly desirable demonstration for metrology, with GaAs and Si pumps at the forefront of these tests. Here, we show that pumping can be achieved in a yet unexplored semiconductor, i.e. germanium. We realise a single-hole pump with a tunable-barrier quantum dot electrostatically defined at a Ge/SiGe heterostructure interface. We observe quantized current plateaux by driving the system with a single sinusoidal drive up to a frequency of 100 MHz. The operation of the prototype was affected by accidental formation of multiple dots, probably due to disorder potential, and random charge fluctuations. We suggest straightforward refinements of the fabrication process to improve pump characteristics in future experiments.
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Submitted 31 May, 2021;
originally announced May 2021.
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Clock-controlled emission of single-electron wavepackets in a solid-state circuit
Authors:
J. D. Fletcher,
M. Kataoka,
H. Howe,
M. Pepper,
P. See,
S. P. Giblin,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
T. J. B. M. Janssen
Abstract:
We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phon…
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We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths.
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Submitted 20 February, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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Stabilization of single-electron pumps by high magnetic fields
Authors:
J. D. Fletcher,
M. Kataoka,
S. P. Giblin,
Sunghun Park,
H. -S. Sim,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
H. E. Beere,
D. A. Ritchie
Abstract:
We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati…
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We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.
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Submitted 31 August, 2012; v1 submitted 22 July, 2011;
originally announced July 2011.
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Surface Acoustic Wave Single-Electron Interferometry
Authors:
Roberta Rodriquez,
Daniel K. L. Oi,
Crispin H. W. Barnes,
Masaya Kataoka,
Toshio Ohshima,
Artur K. Ekert
Abstract:
We propose an experiment to observe interference of a single electron as it is transported along two parallel quasi-one-dimensional channels trapped in a single minimum of a travelling periodic electric field. The experimental device is a modification of the surface acoustic wave (SAW) based quantum processor. Interference is achieved by creating a superposition of spatial wavefunctions between…
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We propose an experiment to observe interference of a single electron as it is transported along two parallel quasi-one-dimensional channels trapped in a single minimum of a travelling periodic electric field. The experimental device is a modification of the surface acoustic wave (SAW) based quantum processor. Interference is achieved by creating a superposition of spatial wavefunctions between the two channels and inducing a relative phase shift via either a transverse electric field or a magnetic field. The interference can be used to estimate the decoherence time of an electron in this type of solid-state device.
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Submitted 30 September, 2004;
originally announced September 2004.
