Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers
Authors:
Xingrui Cheng,
Nils Kolja Wessling,
Saptarsi Ghosh,
Andrew R. Kirkpatrick,
Menno J. Kappers,
Yashna N. D. Lekhai,
Gavin W. Morley,
Rachel A. Oliver,
Jason M. Smith,
Martin D. Dawson,
Patrick S. Salter,
Michael J. Strain
Abstract:
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion…
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Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centres and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes towards future scalable systems development. The micro-lenses are integrated in a non-invasive manner, as they are added on top of the unstructured diamond surface and bond by Van-der-Waals forces. For emitters at 5 micrometer depth, we find approximately 2x improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV's quantum properties after integration.
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Submitted 20 June, 2023;
originally announced June 2023.
Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities
Authors:
Igor Aharonovich,
Nan Niu,
Fabian Rol,
Kasey J Russell,
Alexander Woolf,
Haitham A. R. El-Ella,
Menno J. Kappers,
Rachel A Oliver,
Evelyn L. Hu
Abstract:
Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). T…
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Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN μ-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices.
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Submitted 23 August, 2011;
originally announced August 2011.
