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Compact frequency multiplexed readout of silicon quantum dots in monolithic FDSOI 28nm technology
Authors:
Quentin Schmidt,
Baptiste Jadot,
Brian Martinez,
Thomas Houriez,
Adrien Morel,
Tristan Meunier,
Gaël Pillonnet,
Gérard Billiot,
Aloysius Jansen,
Xavier Jehl,
Yvain Thonnart,
Franck Badets
Abstract:
This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves…
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This paper demonstrates the first on-chip frequency multiplexed readout of two co-integrated single-electron transistors without the need for bulky resonators. We characterize single electron dynamics in both single electron transistors at 4.2K before validating their simultaneous readout within 2.2μs, achieving a 99.9% fidelity with a 1MHz frequency spacing. This experimental demonstration paves the way towards resonator-free large-scale quantum-classical architectures that would be required for future universal and reprogrammable quantum computers.
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Submitted 29 October, 2024;
originally announced October 2024.
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Parametric longitudinal coupling of a semiconductor charge qubit and a RF resonator
Authors:
Victor Champain,
Simon Zihlmann,
Alessandro Chessari,
Benoit Bertrand,
Heimanu Niebojewski,
Etienne Dumur,
Xavier Jehl,
Vivien Schmitt,
Boris Brun,
Clemens Winkelmann,
Yann-Michel Niquet,
Michele Filippone,
Silvano De Franceschi,
Romain Maurand
Abstract:
In this study, we provide a full experimental characterization of the parametric longitudinal coupling between a CMOS charge qubit and an off-chip RF resonator. Following Corrigan et al, Phys. Rev. Applied 20, 064005 (2023), we activate parametric longitudinal coupling by driving the charge qubit at the resonator frequency. Managing the crosstalk between the drive applied to the qubit and the reso…
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In this study, we provide a full experimental characterization of the parametric longitudinal coupling between a CMOS charge qubit and an off-chip RF resonator. Following Corrigan et al, Phys. Rev. Applied 20, 064005 (2023), we activate parametric longitudinal coupling by driving the charge qubit at the resonator frequency. Managing the crosstalk between the drive applied to the qubit and the resonator allows for the systematic study of the dependence of the longitudinal and dispersive charge-photon couplings on the qubit-resonator detuning and the applied drive. Our experimental estimations of the charge-photon couplings are perfectly reproduced by theoretical simple formulas, without relying on any fitting parameter. We go further by showing a parametric displacement of the resonator's steady state, conditional on the qubit state, and the insensitivity of the longitudinal coupling constant on the photon population of the resonator. Our results open to the exploration of the photon-mediated longitudinal readout and coupling of multiple and distant spins, with long coherent times, in hybrid CMOS cQED architectures.
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Submitted 26 October, 2024;
originally announced October 2024.
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Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
Authors:
L. Le Guevel,
G. Billiot,
S. De Franceschi,
A. Morel,
X. Jehl,
A. G. M. Jansen,
G. Pillonnet
Abstract:
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of…
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In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of circuit is especially conceived for the readout of semiconductor spin qubits. As opposed to commonly used schemes based on dispersive rf reflectometry, which require mm-scale passive inductors, it allows for a markedly reduced footprint (50$μ$m $\times$ 60$μ$m), facilitating its integration in a scalable quantum-classical architecture. In addition, its active inductor results in a resonant circuit with tunable frequency and quality factor, enabling the optimization of readout sensitivity.
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Submitted 9 February, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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A CMOS silicon spin qubit
Authors:
R. Maurand,
X. Jehl,
D. Kotekar Patil,
A. Corna,
H. Bohuslavskyi,
R. Laviéville,
L. Hutin,
S. Barraud,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silic…
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Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.
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Submitted 24 May, 2016;
originally announced May 2016.
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Coupling and coherent electrical control of two dopants in a silicon nanowire
Authors:
E. Dupont-Ferrier,
B. Roche,
B. Voisin,
X. Jehl,
R. Wacquez,
M. Vinet,
M. Sanquer,
S. De Franceschi
Abstract:
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we…
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Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon technology, leading to the realization of single-atom transistors and to the first measurements of electron spin dynamics in single donors. Here we show that we can electrically couple two donors embedded in a multi-gate silicon transistor, and induce coherent oscillations in their charge states by means of microwave signals. We measure single-electron tunneling across the two donors, which reveals their energy spectrum. The lowest energy states, corresponding to a single electron located on either of the two donors, form a two-level system (TLS) well separated from all other electronic levels. Gigahertz driving of this TLS results in a quantum interference pattern associated with the absorption or the stimulated emission of up to ten microwave photons. We estimate a charge dephasing time of 0.3 nanoseconds, consistent with other types of charge quantum bits. Here, however, the relatively short coherence time can be counterbalanced by fast operation signals (in principle up to 1 terahertz) as allowed by the large empty energy window separating ground and excited states in donor atoms. The demonstrated coherent coupling of two donors constitutes an essential step towards donor-based quantum computing devices in silicon.
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Submitted 8 July, 2012;
originally announced July 2012.
