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A silicon spin vacuum: isotopically enriched $^{28}$silicon-on-insulator and $^{28}$silicon from ultra-high fluence ion implantation
Authors:
Shao Qi Lim,
Brett C. Johnson,
Sergey Rubanov,
Nico Klingner,
Bin Gong,
Alexander M. Jakob,
Danielle Holmes,
David N. Jamieson,
Jim S. Williams,
Jeffrey C. McCallum
Abstract:
Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce…
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Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce $^{28}$Si and $^{28}$Si-on-insulator (SOI) samples. Experimentally, we produced a $^{28}$Si sample on natural Si substrate with $^{29}$Si depleted to 7~ppm (limited by measurement noise floor), that is at least 100 nm thick. This is achieved with an ion energy that results in a sputter yield of less than one and an ultra-high ion fluence, as supported by our improved computational model that is based on fitting a large number of experiments. Further, our model predicts the $^{29}$Si and $^{30}$Si depletion in our sample to be less than 1~ppm. In the case of SOI, ion implantation conditions are found to be more stringent than those of bulk natural Si in terms of minimizing threading dislocations upon subsequent solid phase epitaxy annealing. Finally, we do not observe open volume defects in our $^{28}$SOI and $^{28}$Si samples after SPE annealing (620°C, 10 minutes).
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Submitted 18 May, 2025; v1 submitted 4 April, 2025;
originally announced April 2025.
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Scalable entanglement of nuclear spins mediated by electron exchange
Authors:
Holly G. Stemp,
Mark R. van Blankenstein,
Serwan Asaad,
Mateusz T. Mądzik,
Benjamin Joecker,
Hannes R. Firgau,
Arne Laucht,
Fay E. Hudson,
Andrew S. Dzurak,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrea Morello
Abstract:
The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a…
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The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a silicon device, separated by up to 20 nanometers. Each atoms binds separate electrons, whose exchange interaction mediates the nuclear two-qubit gate. We prove that the nuclei are entangled by preparing and measuring Bell states with a fidelity of 76 +/- 5 $\%$ and a concurrence of 0.67 +/- 0.05. With this method, future progress in scaling up semiconductor spin qubits can be extended to the development of nuclear-spin based quantum computers.
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Submitted 9 March, 2025;
originally announced March 2025.
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Roadmap on Atomic-scale Semiconductor Devices
Authors:
Steven R. Schofield,
Andrew J. Fisher,
Eran Ginossar,
Joseph W. Lyding,
Richard Silver,
Fan Fei,
Pradeep Namboodiri,
Jonathan Wyrick,
M. G. Masteghin,
D. C. Cox,
B. N. Murdin,
S. K Clowes,
Joris G. Keizer,
Michelle Y. Simmons,
Holly G. Stemp,
Andrea Morello,
Benoit Voisin,
Sven Rogge,
Robert A. Wolkow,
Lucian Livadaru,
Jason Pitters,
Taylor J. Z. Stock,
Neil J. Curson,
Robert E. Butera,
Tatiana V. Pavlova
, et al. (25 additional authors not shown)
Abstract:
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum dev…
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Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.
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Submitted 22 January, 2025; v1 submitted 8 January, 2025;
originally announced January 2025.
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Certifying the quantumness of a nuclear spin qudit through its uniform precession
Authors:
Arjen Vaartjes,
Martin Nurizzo,
Lin Htoo Zaw,
Benjamin Wilhelm,
Xi Yu,
Danielle Holmes,
Daniel Schwienbacher,
Anders Kringhøj,
Mark R. van Blankenstein,
Alexander M. Jakob,
Fay E. Hudson,
Kohei M. Itoh,
Riley J. Murray,
Robin Blume-Kohout,
Namit Anand,
Andrew S. Dzurak,
David N. Jamieson,
Valerio Scarani,
Andrea Morello
Abstract:
Spin precession is a textbook example of dynamics of a quantum system that exactly mimics its classical counterpart. Here we challenge this view by certifying the quantumness of exotic states of a nuclear spin through its uniform precession. The key to this result is measuring the positivity, instead of the expectation value, of the $x$-projection of the precessing spin, and using a spin > 1/2 qud…
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Spin precession is a textbook example of dynamics of a quantum system that exactly mimics its classical counterpart. Here we challenge this view by certifying the quantumness of exotic states of a nuclear spin through its uniform precession. The key to this result is measuring the positivity, instead of the expectation value, of the $x$-projection of the precessing spin, and using a spin > 1/2 qudit, that is not restricted to semi-classical spin coherent states. The experiment is performed on a single spin-7/2 $^{123}$Sb nucleus, implanted in a silicon nanoelectronic device, amenable to high-fidelity preparation, control, and projective single-shot readout. Using Schrödinger cat states and other bespoke states of the nucleus, we violate the classical bound by 19 standard deviations, proving that no classical probability distribution can explain the statistic of this spin precession, and highlighting our ability to prepare quantum resource states with high fidelity in a single atomic-scale qudit.
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Submitted 10 October, 2024; v1 submitted 10 October, 2024;
originally announced October 2024.
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Schrödinger cat states of a nuclear spin qudit in silicon
Authors:
Xi Yu,
Benjamin Wilhelm,
Danielle Holmes,
Arjen Vaartjes,
Daniel Schwienbacher,
Martin Nurizzo,
Anders Kringhøj,
Mark R. van Blankenstein,
Alexander M. Jakob,
Pragati Gupta,
Fay E. Hudson,
Kohei M. Itoh,
Riley J. Murray,
Robin Blume-Kohout,
Thaddeus D. Ladd,
Namit Anand,
Andrew S. Dzurak,
Barry C. Sanders,
David N. Jamieson,
Andrea Morello
Abstract:
High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced co…
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High-dimensional quantum systems are a valuable resource for quantum information processing. They can be used to encode error-correctable logical qubits, which has been demonstrated using continuous-variable states in microwave cavities or the motional modes of trapped ions. For example, high-dimensional systems can be used to realise `Schrödinger cat' states, superpositions of widely displaced coherent states that can also be used to illustrate quantum effects at large scales. Recent proposals have suggested encoding qubits in high-spin atomic nuclei, finite-dimensional systems that can host hardware-efficient versions of continuous-variable codes. Here we demonstrate the creation and manipulation of Schrodinger cat states using the spin-7/2 nucleus of an antimony atom embedded in a silicon nanoelectronic device. We use a multi-frequency control scheme to produce spin rotations that preserve the symmetry of the qudit, and constitute logical Pauli operations for qubits encoded in the Schrodinger cat states. Our work demonstrates the ability to prepare and control nonclassical resource states, a prerequisite for applications in quantum information processing and quantum error correction using our scalable, manufacturable semiconductor platform.
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Submitted 13 January, 2025; v1 submitted 24 May, 2024;
originally announced May 2024.
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Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits
Authors:
Holly G. Stemp,
Serwan Asaad,
Mark R. van Blankenstein,
Arjen Vaartjes,
Mark A. I. Johnson,
Mateusz T. Mądzik,
Amber J. A. Heskes,
Hannes R. Firgau,
Rocky Y. Su,
Chih Hwan Yang,
Arne Laucht,
Corey I. Ostrove,
Kenneth M. Rudinger,
Kevin Young,
Robin Blume-Kohout,
Fay E. Hudson,
Andrew S. Dzurak,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrea Morello
Abstract:
Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of…
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Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of universal 1- and 2-qubit gates in a system of two weakly exchange-coupled electrons, bound to single phosphorus donors introduced in silicon by ion implantation. We surprisingly observe that the exchange interaction has no effect on the qubit coherence. We quantify the fidelity of the quantum operations using gate set tomography (GST), and we use the universal gate set to create entangled Bell states of the electrons spins, with fidelity ~ 93%, and concurrence 0.91 +/- 0.08. These results form the necessary basis for scaling up donor-based quantum computers.
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Submitted 2 March, 2024; v1 submitted 27 September, 2023;
originally announced September 2023.
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Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
Authors:
Alexander M. Jakob,
Simon G. Robson,
Hannes R. Firgau,
Vincent Mourik,
Vivien Schmitt,
Danielle Holmes,
Matthias Posselt,
Edwin L. H. Mayes,
Daniel Spemann,
Andrea Morello,
David N. Jamieson
Abstract:
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufac…
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Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufacture scale-up donor-based quantum computers. We use $^{31}$PF$_{2}$ molecule implants to triple the placement certainty compared to $^{31}$P ions, while attaining 99.99$\,$% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as $^{123}$Sb and $^{209}$Bi, which represent high-dimensional qudits for quantum information processing, while Sb$_2$ molecules enable deterministic formation of closely-spaced qudits. We demonstrate the deterministic formation of regular arrays of donor atoms with 300$\,$nm spacing, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.
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Submitted 18 September, 2023;
originally announced September 2023.
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Improved placement precision of implanted donor spin qubits in silicon using molecule ions
Authors:
Danielle Holmes,
Benjamin Wilhelm,
Alexander M. Jakob,
Xi Yu,
Fay E. Hudson,
Kohei M. Itoh,
Andrew S. Dzurak,
David N. Jamieson,
Andrea Morello
Abstract:
Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single…
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Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single atoms. The bystander ions, co-implanted with the dopant of interest, carry additional kinetic energy and thus increase the detection confidence of deterministic donor implantation employing single ion detectors to signal the induced electron-hole pairs. This allows the placement uncertainty of donor qubits to be minimised without compromising on detection confidence. We investigate the suitability of phosphorus difluoride (PF$_2^+$) molecule ions to produce high quality P donor qubits. Since $^{19}$F nuclei have a spin of $I = 1/2$, it is imperative to ensure that they do not hyperfine couple to P donor electrons as they would cause decoherence by adding magnetic noise. Using secondary ion mass spectrometry, we confirm that F diffuses away from the active region of qubit devices while the P donors remain close to their original location during a donor activation anneal. PF$_2$-implanted qubit devices were then fabricated and electron spin resonance (ESR) measurements were performed on the P donor electron. A pure dephasing time of $T_2^* = 20.5 \pm 0.5$ $μ$s and a coherence time of $T_2^{Hahn} = 424 \pm 5$ $μ$s were extracted for the P donor electron-values comparable to those found in previous P-implanted qubit devices. Closer investigation of the P donor ESR spectrum revealed that no $^{19}$F nuclear spins were found in the vicinity of the P donor. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits.
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Submitted 8 August, 2023;
originally announced August 2023.
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Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond
Authors:
Nicholas F. L. Collins,
Alexander M. Jakob,
Simon G. Robson,
Shao Qi Lim,
Paul Räcke,
Brett C. Johnson,
Boqing Liu,
Yuerui Lu,
Daniel Spemann,
Jeffrey C. McCallum,
David N. Jamieson
Abstract:
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding appl…
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Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding application for a large-scale quantum computer will require ordered arrays. By configuring an electronic-grade diamond substrate with a biased surface graphene electrode connected to charge-sensitive electronics, it is possible to demonstrate deterministic single ion implantation for ions stopping between 30 and 130~nm deep from a typical stochastic ion source. An implantation event is signalled by a charge pulse induced by the drift of electron-hole pairs from the ion implantation. The ion implantation site is localised with an AFM nanostencil or a focused ion beam. This allows the construction of ordered arrays of single atoms with associated colour centres that paves the way for the fabrication of deterministic colour center networks in a monolithic device.
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Submitted 14 June, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
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Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields
Authors:
Irene Fernández de Fuentes,
Tim Botzem,
Mark A. I. Johnson,
Arjen Vaartjes,
Serwan Asaad,
Vincent Mourik,
Fay E. Hudson,
Kohei M. Itoh,
Brett C. Johnson,
Alexander M. Jakob,
Jeffrey C. McCallum,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of…
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Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of the interactions. Here, we present an atom-based semiconductor platform where a 16-dimensional Hilbert space is built by the combined electron-nuclear states of a single antimony donor in silicon. We demonstrate the ability to navigate this large Hilbert space using both electric and magnetic fields, with gate fidelity exceeding 99.8% on the nuclear spin, and unveil fine details of the system Hamiltonian and its susceptibility to control and noise fields. These results establish high-spin donors as a rich platform for practical quantum information and to explore quantum foundations.
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Submitted 14 June, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
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An electrically-driven single-atom `flip-flop' qubit
Authors:
Rostyslav Savytskyy,
Tim Botzem,
Irene Fernandez de Fuentes,
Benjamin Joecker,
Jarryd J. Pla,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states o…
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The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields.
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Submitted 2 January, 2023; v1 submitted 9 February, 2022;
originally announced February 2022.
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Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
Authors:
Simon G. Robson,
Paul Räcke,
Alexander M. Jakob,
Nicholas Collins,
Hannes R. Firgau,
Vivien Schmitt,
Vincent Mourik,
Andrea Morello,
Edwin Mayes,
Daniel Spemann,
David N. Jamieson
Abstract:
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore t…
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The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore the feasibility of this approach by implanting low-energy ions into silicon devices featuring an enlarged 60x60 $μ$m sensitive area and an ultra-thin 3.2 nm gate oxide - capable of hosting large-scale donor arrays. By combining a focused ion beam system incorporating an electron-beam-ion-source with in-vacuum ultra-low noise ion detection electronics, we first demonstrate a versatile method to spatially map the device response characteristics to shallowly implanted 12 keV $^1$H$_2^+$ ions. Despite the weak internal electric field, near-unity charge collection efficiency is obtained from the entire sensitive area. This can be explained by the critical role that the high-quality thermal gate oxide plays in the ion detection response, allowing an initial rapid diffusion of ion induced charge away from the implant site. Next, we adapt our approach to perform deterministic implantation of a few thousand 24 keV $^{40}$Ar$^{2+}$ ions into a predefined micro-volume, without any additional collimation. Despite the reduced ionisation from the heavier ion species, a fluence-independent detection confidence of $\geq$99.99% was obtained. Our system thus represents not only a new method for mapping the near-surface electrical landscape of electronic devices, but also an attractive framework towards mask-free prototyping of large-scale donor arrays in silicon.
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Submitted 31 May, 2022; v1 submitted 27 January, 2022;
originally announced January 2022.
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Beating the thermal limit of qubit initialization with a Bayesian Maxwell's demon
Authors:
Mark A. I. Johnson,
Mateusz T. Mądzik,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
David N. Jamieson,
Andrew Dzurak,
Andrea Morello
Abstract:
Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is ba…
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Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is based on real time monitoring of the qubit through a negative-result measurement -- the equivalent of a `Maxwell's demon' that triggers the experiment only upon the appearance of a qubit in the lowest-energy state. We experimentally apply it to initialize an electron spin qubit in silicon, achieving a ground-state initialization fidelity of 98.9(4)%, corresponding to a 20$\times$ reduction in initialization error compared to the unmonitored system. A fidelity approaching 99.9% could be achieved with realistic improvements in the bandwidth of the amplifier chain or by slowing down the rate of electron tunneling from the reservoir. We use a nuclear spin ancilla, measured in quantum nondemolition mode, to prove the value of the electron initialization fidelity far beyond the intrinsic fidelity of the electron readout. However, the method itself does not require an ancilla for its execution, saving the need for additional resources. The quantitative analysis of the initialization fidelity reveals that a simple picture of spin-dependent electron tunneling does not correctly describe the data. Our digital `Maxwell's demon' can be applied to a wide range of quantum systems, with minimal demands on control and detection hardware.
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Submitted 1 November, 2022; v1 submitted 5 October, 2021;
originally announced October 2021.
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Precision tomography of a three-qubit donor quantum processor in silicon
Authors:
Mateusz T. Mądzik,
Serwan Asaad,
Akram Youssry,
Benjamin Joecker,
Kenneth M. Rudinger,
Erik Nielsen,
Kevin C. Young,
Timothy J. Proctor,
Andrew D. Baczewski,
Arne Laucht,
Vivien Schmitt,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrew S. Dzurak,
Christopher Ferrie,
Robin Blume-Kohout,
Andrea Morello
Abstract:
Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to…
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Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.
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Submitted 27 January, 2022; v1 submitted 6 June, 2021;
originally announced June 2021.
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Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
Authors:
Alexander M. Jakob,
Simon G. Robson,
Vivien Schmitt,
Vincent Mourik,
Matthias Posselt,
Daniel Spemann,
Brett C. Johnson,
Hannes R. Firgau,
Edwin Mayes,
Jeffrey C. McCallum,
Andrea Morello,
David N. Jamieson
Abstract:
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices requi…
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The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications.
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Submitted 9 September, 2020; v1 submitted 7 September, 2020;
originally announced September 2020.
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Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
Authors:
Mateusz T. Mądzik,
Arne Laucht,
Fay E. Hudson,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Kohei M. Itoh,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential s…
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Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of $^{31}$P donors implanted in silicon. The coupling strength, $J = 32.06 \pm 0.06$ MHz, is measured spectroscopically with unprecedented precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling $A \approx 90$ MHz which detunes the two electrons, a native two-qubit Controlled-Rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of $J$, which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the Metal-Oxide-Semiconductor fabrication protocols commonly used in the classical electronics industry.
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Submitted 29 June, 2020; v1 submitted 8 June, 2020;
originally announced June 2020.
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Controllable freezing of the nuclear spin bath in a single-atom spin qubit
Authors:
Mateusz T. Mądzik,
Thaddeus D. Ladd,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Arne Laucht,
Andrea Morello
Abstract:
The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P…
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The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors.
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Submitted 25 July, 2019;
originally announced July 2019.
