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Full-permutation dynamical decoupling in triple-quantum-dot spin qubits
Authors:
Bo Sun,
Teresa Brecht,
Bryan Fong,
Moonmoon Akmal,
Jacob Z. Blumoff,
Tyler A. Cain,
Faustin W. Carter,
Dylan H. Finestone,
Micha N. Fireman,
Wonill Ha,
Anthony T. Hatke,
Ryan M. Hickey,
Clayton A. C. Jackson,
Ian Jenkins,
Aaron M. Jones,
Andrew Pan,
Daniel R. Ward,
Aaron J. Weinstein,
Samuel J. Whiteley,
Parker Williams,
Matthew G. Borselli,
Matthew T. Rakher,
Thaddeus D. Ladd
Abstract:
Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first…
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Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first order, which is particularly interesting for encoded exchange-only qubits. For a specific construction, which we call NZ1y, the qubit is isolated from error sources to such a degree that we measure a remarkable exchange pulse error of $5\times10^{-5}$. This sequence maintains a quantum state for roughly 18,000 exchange pulses, extending the qubit coherence from $T_2^*=2~μ$s to $T_2 = 720~μ$s. We experimentally validate an error model that includes $1/f$ charge noise and $1/f$ magnetic noise in two ways: by direct exchange-qubit simulation, and by integration of the assumed noise spectra with derived filter functions, both of which reproduce the measured error and leakage with respect to changing the repetition rate.
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Submitted 7 September, 2022; v1 submitted 24 August, 2022;
originally announced August 2022.
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High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit
Authors:
A. R. Mills,
C. R. Guinn,
M. M. Feldman,
A. J. Sigillito,
M. J. Gullans,
M. Rakher,
J. Kerckhoff,
C. A. C. Jackson,
J. R. Petta
Abstract:
Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibil…
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Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibilities >99%, exceeding the threshold for quantum error correction. In the same device, we achieve average single qubit control fidelities >99.95%. Our results show that silicon spin qubits can be operated with high overall operation fidelity.
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Submitted 20 April, 2022;
originally announced April 2022.
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Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
Authors:
Jacob Z. Blumoff,
Andrew S. Pan,
Tyler E. Keating,
Reed W. Andrews,
David W. Barnes,
Teresa L. Brecht,
Edward T. Croke,
Larken E. Euliss,
Jacob A. Fast,
Clayton A. C. Jackson,
Aaron M. Jones,
Joseph Kerckhoff,
Robert K. Lanza,
Kate Raach,
Bryan J. Thomas,
Roland Velunta,
Aaron J. Weinstein,
Thaddeus D. Ladd,
Kevin Eng,
Matthew G. Borselli,
Andrew T. Hunter,
Matthew T. Rakher
Abstract:
We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but appli…
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We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ($980$ ns) and initialization ($\approx 300$ ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but applicable more broadly, and report an infidelity of $2.5\pm0.5\times 10^{-3}$. This result is enabled by a high-valley-splitting heterostructure, initialization at the 2-to-3 electron charge boundary, and careful assessment and mitigation of $T_1$ during spin-to-charge conversion. The ultimate fidelity is limited by a number of comparably-important factors, and we identify clear paths towards further improved fidelity and speed. Along with an observed single-qubit randomized benchmarking error rate of $1.7\times 10^{-3}$, this work demonstrates initialization, control, and measurement of Si/SiGe triple-dot qubits at fidelities and durations which are promising for scalable quantum information processing.
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Submitted 28 January, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
Authors:
F. Borjans,
X. Zhang,
X. Mi,
G. Cheng,
N. Yao,
C. A. C. Jackson,
L. F. Edge,
J. R. Petta
Abstract:
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive…
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Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive to atomic-scale disorder. Large valley splittings are desirable to have a well-defined spin qubit. In addition, an understanding of the inter-valley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy level diagram may affect the fidelity of charge and spin transfer protocols in silicon quantum dot arrays. Here we use microwave spectroscopy to probe spatial variations in the valley splitting, and the intra- and inter-valley tunnel couplings ($t_{ij}$ and $t'_{ij}$) that couple dots $i$ and $j$ in a triple quantum dot (TQD). We uncover large spatial variations in the ratio of inter-valley to intra-valley tunnel couplings $t_{12}'/t_{12}=0.90$ and $t_{23}'/t_{23}=0.56$. By tuning the interdot tunnel barrier we also show that $t'_{ij}$ scales linearly with $t_{ij}$, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well.
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Submitted 29 January, 2021;
originally announced January 2021.
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Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
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Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
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Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
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Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits
Authors:
J. Kerckhoff,
B. Sun,
B. H. Fong,
C. Jones,
A. A. Kiselev,
D. W. Barnes,
R. S. Noah,
E. Acuna,
M. Akmal,
S. D. Ha,
J. A. Wright,
B. J. Thomas,
C. A. C. Jackson,
L. F. Edge,
K. Eng,
R. S. Ross,
T. D. Ladd
Abstract:
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width…
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We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.
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Submitted 17 September, 2020;
originally announced September 2020.
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Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics
Authors:
F. Borjans,
X. Croot,
S. Putz,
X. Mi,
S. M. Quinn,
A. Pan,
J. Kerckhoff,
E. J. Pritchett,
C. A. Jackson,
L. F. Edge,
R. S. Ross,
T. D. Ladd,
M. G. Borselli,
M. F. Gyure,
J. R. Petta
Abstract:
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate…
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Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.
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Submitted 2 March, 2020;
originally announced March 2020.
