Showing 1–5 of 5 results for author: Hughes, A C

Scalable, high-fidelity all-electronic control of trapped-ion qubits

Authors: C. M. Löschnauer, J. Mosca Toba, A. C. Hughes, S. A. King, M. A. Weber, R. Srinivas, R. Matt, R. Nourshargh, D. T. C. Allcock, C. J. Ballance, C. Matthiesen, M. Malinowski, T. P. Harty

Abstract: The central challenge of quantum computing is implementing high-fidelity quantum gates at scale. However, many existing approaches to qubit control suffer from a scale-performance trade-off, impeding progress towards the creation of useful devices. Here, we present a vision for an electronically controlled trapped-ion quantum computer that alleviates this bottleneck. Our architecture utilizes shar… ▽ More The central challenge of quantum computing is implementing high-fidelity quantum gates at scale. However, many existing approaches to qubit control suffer from a scale-performance trade-off, impeding progress towards the creation of useful devices. Here, we present a vision for an electronically controlled trapped-ion quantum computer that alleviates this bottleneck. Our architecture utilizes shared current-carrying traces and local tuning electrodes in a microfabricated chip to perform quantum gates with low noise and crosstalk regardless of device size. To verify our approach, we experimentally demonstrate low-noise site-selective single- and two-qubit gates in a seven-zone ion trap that can control up to 10 qubits. We implement electronic single-qubit gates with 99.99916(7)% fidelity, and demonstrate consistent performance with low crosstalk across the device. We also electronically generate two-qubit maximally entangled states with 99.97(1)% fidelity and long-term stable performance over continuous system operation. These state-of-the-art results validate the path to directly scaling these techniques to large-scale quantum computers based on electronically controlled trapped-ion qubits. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Coherent Control of Trapped Ion Qubits with Localized Electric Fields

Authors: R. Srinivas, C. M. Löschnauer, M. Malinowski, A. C. Hughes, R. Nourshargh, V. Negnevitsky, D. T. C. Allcock, S. A. King, C. Matthiesen, T. P. Harty, C. J. Ballance

Abstract: We present a new method for coherent control of trapped ion qubits in separate interaction regions of a multi-zone trap by simultaneously applying an electric field and a spin-dependent gradient. Both the phase and amplitude of the effective single-qubit rotation depend on the electric field, which can be localised to each zone. We demonstrate this interaction on a single ion using both laser-base… ▽ More We present a new method for coherent control of trapped ion qubits in separate interaction regions of a multi-zone trap by simultaneously applying an electric field and a spin-dependent gradient. Both the phase and amplitude of the effective single-qubit rotation depend on the electric field, which can be localised to each zone. We demonstrate this interaction on a single ion using both laser-based and magnetic field gradients in a surface-electrode ion trap, and measure the localisation of the electric field. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Synthesizing a $\hatσ_z$ spin-dependent force for optical, metastable, and ground state trapped-ion qubits

Authors: O. Băzăvan, S. Saner, M. Minder, A. C. Hughes, R. T. Sutherland, D. M. Lucas, R. Srinivas, C. J. Ballance

Abstract: A single bichromatic field near-resonant to a qubit transition is typically used for $\hatσ_x$ or $\hatσ_y$ Mølmer-Sørensen type interactions in trapped ion systems. Using this field configuration, it is also possible to synthesize a $\hatσ_z$ spin-dependent force by merely adjusting the beat-note frequency. Here, we expand on previous work and present a comprehensive theoretical and experimental… ▽ More A single bichromatic field near-resonant to a qubit transition is typically used for $\hatσ_x$ or $\hatσ_y$ Mølmer-Sørensen type interactions in trapped ion systems. Using this field configuration, it is also possible to synthesize a $\hatσ_z$ spin-dependent force by merely adjusting the beat-note frequency. Here, we expand on previous work and present a comprehensive theoretical and experimental investigation of this scheme with a laser near-resonant to a quadrupole transition in $^{88}$Sr$^+$. Further, we characterise its robustness to optical phase and qubit frequency offsets, and demonstrate its versatility by entangling optical, metastable, and ground state qubits. △ Less

Submitted 1 December, 2022; v1 submitted 22 July, 2022; originally announced July 2022.

Comments: O. Băzăvan and S. Saner contributed equally to this work

Benchmarking a high-fidelity mixed-species entangling gate

Authors: A. C. Hughes, V. M. Schäfer, K. Thirumalai, D. P. Nadlinger, S. R. Woodrow, D. M. Lucas, C. J. Ballance

Abstract: We implement a two-qubit logic gate between a $^{43}\mathrm{Ca}^+\,$ hyperfine qubit and a $^{88}\mathrm{Sr}^+\,$ Zeeman qubit. For this pair of ion species, the S--P optical transitions are close enough that a single laser of wavelength $402\,\mathrm{nm}$ can be used to drive the gate, but sufficiently well separated to give good spectral isolation and low photon scattering errors. We characteriz… ▽ More We implement a two-qubit logic gate between a $^{43}\mathrm{Ca}^+\,$ hyperfine qubit and a $^{88}\mathrm{Sr}^+\,$ Zeeman qubit. For this pair of ion species, the S--P optical transitions are close enough that a single laser of wavelength $402\,\mathrm{nm}$ can be used to drive the gate, but sufficiently well separated to give good spectral isolation and low photon scattering errors. We characterize the gate by full randomized benchmarking, gate set tomography and Bell state analysis. The latter method gives a fidelity of $99.8(1)\%$, comparable to that of the best same-species gates and consistent with known sources of error. △ Less

Submitted 3 August, 2020; v1 submitted 17 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Lett. 125, 080504 (2020)

Probing Qubit Memory Errors at the Part-per-Million Level

Authors: M. A. Sepiol, A. C. Hughes, J. E. Tarlton, D. P. Nadlinger, T. G. Ballance, C. J. Ballance, T. P. Harty, A. M. Steane, J. F. Goodwin, D. M. Lucas

Abstract: Robust qubit memory is essential for quantum computing, both for near-term devices operating without error correction, and for the long-term goal of a fault-tolerant processor. We directly measure the memory error $ε_m$ for a $^{43}$Ca$^+$ trapped-ion qubit in the small-error regime and find $ε_m<10^{-4}$ for storage times $t\lesssim50\,\mbox{ms}$. This exceeds gate or measurement times by three o… ▽ More Robust qubit memory is essential for quantum computing, both for near-term devices operating without error correction, and for the long-term goal of a fault-tolerant processor. We directly measure the memory error $ε_m$ for a $^{43}$Ca$^+$ trapped-ion qubit in the small-error regime and find $ε_m<10^{-4}$ for storage times $t\lesssim50\,\mbox{ms}$. This exceeds gate or measurement times by three orders of magnitude. Using randomized benchmarking, at $t=1\,\mbox{ms}$ we measure $ε_m=1.2(7)\times10^{-6}$, around ten times smaller than that extrapolated from the $T_{2}^{\ast}$ time, and limited by instability of the atomic clock reference used to benchmark the qubit. △ Less

Submitted 28 September, 2019; v1 submitted 16 May, 2019; originally announced May 2019.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. Lett. 123, 110503 (2019)