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Compact Superconducting Kinetic Inductance Traveling Wave Parametric Amplifiers with On-chip rf Components
Authors:
Logan Howe,
Andrea Giachero,
Michael Vissers,
Jordan Wheeler,
Jason Austermann,
Johannes Hubmayr,
Joel Ullom
Abstract:
Quantum computing systems and fundamental physics experiments using superconducting technologies frequently require signal amplification chains operating near the quantum limit of added noise. Both Josephson parametric amplifiers (JPAs) and traveling wave parametric amplifiers (TWPAs) have been used as first-stage amplifiers to enable readout chains operating within a few quanta or less of the qua…
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Quantum computing systems and fundamental physics experiments using superconducting technologies frequently require signal amplification chains operating near the quantum limit of added noise. Both Josephson parametric amplifiers (JPAs) and traveling wave parametric amplifiers (TWPAs) have been used as first-stage amplifiers to enable readout chains operating within a few quanta or less of the quantum limit. These devices are also presently entering the commercial industry. However, nearly all demonstrations and existing products require bulky external microwave components for interconnection and application of requisite biases. These components -- cabling interconnects, bias tees, directional couplers, and diplexers -- increase the overall amplifier footprint, installation complexity, and reduce already limited available cryogenic volumes. Additionally, these components introduce loss and reflections which impact the measurement efficiency and readout system noise performance; thus making it more difficult to operate near the quantum limit.
Here we present the design and validation of microfabricated bias tees and directional couplers for operating three-wave mixing kinetic inductance TWPAs (KITs). We report the performance of KITs integrated with the microfabricated rf components. Using these devices we demonstrate reduction in the amplifier installation footprint by a factor of nearly five and elimination of all external, lossy microwave components previously required to operate a KIT. Our device displays a 2.8 GHz 3 dB bandwidth with a median true gain of 17.5 dB and median system noise of 3.4 quanta. These efforts represent the first full integration of all rf components mandatory for TWPA operation on-chip. Our results mark significant progress towards the miniaturization and simplification of parametric amplifier setups and will aid in their more widespread applicability.
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Submitted 5 March, 2025;
originally announced March 2025.
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Kinetic inductance traveling wave amplifier designs for practical microwave readout applications
Authors:
A. Giachero,
M. Vissers,
J. Wheeler,
L. Howe,
J. Gao,
J. Austermann,
J. Hubmayr,
A. Nucciotti,
J. Ullom
Abstract:
A Kinetic Inductance Traveling Wave amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly Niobium Titanium Nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, compression power, and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated fr…
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A Kinetic Inductance Traveling Wave amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly Niobium Titanium Nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, compression power, and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter we see an initial improvement in the flux noise. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization -- including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5-7.25 GHz, a maximum practical gain of 12 dB and typical gain ripple under 4 dB peak-to-peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
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Submitted 13 December, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.
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Performance of a Kinetic-Inductance Traveling-Wave Parametric Amplifier at 4 Kelvin: Toward an Alternative to Semiconductor Amplifiers
Authors:
M. Malnou,
J. Aumentado,
M. R. Vissers,
J. D. Wheeler,
J. Hubmayr,
J. N. Ullom,
J. Gao
Abstract:
Most microwave readout architectures in quantum computing or sensing rely on a semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite its remarkable noise performance, a conventional HEMT dissipates several milliwatts of power, posing a practical challenge to scale up the number of qubits or sensors addressed in these architectures. As an alternative, we pres…
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Most microwave readout architectures in quantum computing or sensing rely on a semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite its remarkable noise performance, a conventional HEMT dissipates several milliwatts of power, posing a practical challenge to scale up the number of qubits or sensors addressed in these architectures. As an alternative, we present an amplification chain consisting of a kinetic-inductance traveling-wave parametric amplifier (KI-TWPA) placed at 4 K, followed by a HEMT placed at 70 K, and demonstrate a chain-added noise $T_Σ= 6.3\pm0.5$ K between 3.5 and 5.5 GHz. While, in principle, any parametric amplifier can be quantum limited even at 4 K, in practice we find the KI-TWPA's performance limited by the temperature of its inputs, and by an excess of noise $T_\mathrm{ex} = 1.9$ K. The dissipation of the KI-TWPA's rf pump constitutes the main power load at 4 K and is about one percent that of a HEMT. These combined noise and power dissipation values pave the way for the KI-TWPA's use as a replacement for semiconductor amplifiers.
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Submitted 15 October, 2021;
originally announced October 2021.
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A three-wave mixing kinetic inductance traveling-wave amplifier with near-quantum-limited noise performance
Authors:
M. Malnou,
M. R. Vissers,
J. D. Wheeler,
J. Aumentado,
J. Hubmayr,
J. N. Ullom,
J. Gao
Abstract:
We present a theoretical model and experimental characterization of a microwave kinetic inductance traveling-wave amplifier (KIT), whose noise performance, measured by a shot-noise tunnel junction (SNTJ), approaches the quantum limit. Biased with a dc current, the KIT operates in a three-wave mixing fashion, thereby reducing by several orders of magnitude the power of the microwave pump tone and a…
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We present a theoretical model and experimental characterization of a microwave kinetic inductance traveling-wave amplifier (KIT), whose noise performance, measured by a shot-noise tunnel junction (SNTJ), approaches the quantum limit. Biased with a dc current, the KIT operates in a three-wave mixing fashion, thereby reducing by several orders of magnitude the power of the microwave pump tone and associated parasitic heating compared to conventional four-wave mixing KIT devices. It consists of a 50 Ohms artificial transmission line whose dispersion allows for a controlled amplification bandwidth. We measure $16.5^{+1}_{-1.3}$ dB of gain across a 2 GHz bandwidth with an input 1 dB compression power of -63 dBm, in qualitative agreement with theory. Using a theoretical framework that accounts for the SNTJ-generated noise entering both the signal and idler ports of the KIT, we measure the system-added noise of an amplification chain that integrates the KIT as the first amplifier. This system-added noise, $3.1\pm0.6$ quanta (equivalent to $0.66\pm0.15$ K) between 3.5 and 5.5 GHz, is the one that a device replacing the SNTJ in that chain would see. This KIT is therefore suitable to read large arrays of microwave kinetic inductance detectors and promising for multiplexed superconducting qubit readout.
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Submitted 2 November, 2020; v1 submitted 1 July, 2020;
originally announced July 2020.
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Broadband parametric amplifiers based on nonlinear kinetic inductance artificial transmission lines
Authors:
Saptarshi Chaudhuri,
Dale Li,
Kent Irwin,
Clint Bockstiegel,
Johannes Hubmayr,
Joel Ullom,
Michael Vissers,
Jiansong Gao
Abstract:
We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loadings, and resonator phase shifters placed periodically along the transmission line. Our design offers several adv…
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We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loadings, and resonator phase shifters placed periodically along the transmission line. Our design offers several advantages over previous CPW-based amplifiers, including intrinsic 50 ohm characteristic impedance, natural suppression of higher pump harmonics, lower required pump power, and shorter total trace length. Experimental realizations of both versions of the amplifiers are demonstrated. With a transmission line length of 20 cm, we have achieved gains of 15 dB over several GHz of bandwidth.
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Submitted 3 April, 2017;
originally announced April 2017.
