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Two-stage, low noise quantum frequency conversion of single photons from silicon-vacancy centers in diamond to the telecom C-band
Authors:
Marlon Schäfer,
Benjamin Kambs,
Dennis Herrmann,
Tobias Bauer,
Christoph Becher
Abstract:
The silicon-vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low-loss telecommunication wavelengths becomes a necessity for its use in long-range, fiber-linked networks. This work presents a highly efficient, low-noise quantum freque…
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The silicon-vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low-loss telecommunication wavelengths becomes a necessity for its use in long-range, fiber-linked networks. This work presents a highly efficient, low-noise quantum frequency conversion device for photons emitted by a silicon-vacancy (SiV) center in diamond to the telecom C-band. By using a two-stage difference-frequency mixing scheme SPDC noise is circumvented and Raman noise is minimized, resulting in a very low noise rate of $10.4 \pm 0.7$ photons per second as well as an overall device efficiency of $35.6\, \%$. By converting single photons from SiV centers we demonstrate the preservation of photon statistics upon conversion.
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Submitted 21 July, 2023;
originally announced July 2023.
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Coherence of a charge stabilised tin-vacancy spin in diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Philipp Fuchs,
Takayuki Iwasaki,
Takashi Taniguchi,
Detlef Rogalla,
David Hardeman,
Pierre-Olivier Colard,
Matthew Markham,
Mutsuko Hatano,
Christoph Becher
Abstract:
Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, i…
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Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit's desired charge state. While the negatively charged tin-vacancy ($\text{SnV}^{-}$) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, its usefulness is severely limited by termination of the fluorescence under resonant excitation [1,2,3]. Here, we unveil the underlying charge cycle of group IV-vacancy (G4V) centres and exploit it to demonstrate highly efficient initialisation of the desired negative charge state of single SnV centres while preserving long term stable optical resonances. We furthermore all-optically probe the coherence of the ground state spins by means of coherent population trapping and find a spin dephasing time of 5$μ$s. Additionally, we demonstrate proof-of-principle single shot spin state readout without the necessity of a magnetic field aligned to the symmetry axis of the defect.
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Submitted 27 May, 2022; v1 submitted 11 October, 2021;
originally announced October 2021.
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Spectroscopic Investigations of Negatively Charged Tin-Vacancy Centres in Diamond
Authors:
Johannes Görlitz,
Dennis Herrmann,
Gergő Thiering,
Philipp Fuchs,
Morgane Gandil,
Takayuki Iwasaki,
Takashi Taniguchi,
Michael Kieschnick,
Jan Meijer,
Mutsuko Hatano,
Adam Gali,
Christoph Becher
Abstract:
The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using…
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The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy (PLE) we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the $\text{SnV}^-$ centre and lay the foundation for further studies regarding its suitability in QIP.
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Submitted 11 February, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
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Towards wafer-scale diamond nano- and quantum technologies
Authors:
Richard Nelz,
Johannes Görlitz,
Dennis Herrmann,
Abdallah Slablab,
Michel Challier,
Mariusz Radtke,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Elke Neu
Abstract:
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure…
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
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Submitted 22 October, 2018;
originally announced October 2018.
