Showing 1–2 of 2 results for author: Hannes, W -
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Fidelity of photon-mediated entanglement between remote nuclear-spin multi-qubit registers
Authors:
W. -R. Hannes,
Regina Finsterhoelzl,
Guido Burkard
Abstract:
The electron spin of a nitrogen-vacancy center in diamond lends itself to the control of proximal $^{13}$C nuclear spins via dynamical decoupling methods, possibly combined with radio-frequency driving. Long-lived single-qubit states and high-fidelity electron-nuclear gates required for the realization of a multiqubit register have already been demonstrated. Towards the goal of a scalable architec…
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The electron spin of a nitrogen-vacancy center in diamond lends itself to the control of proximal $^{13}$C nuclear spins via dynamical decoupling methods, possibly combined with radio-frequency driving. Long-lived single-qubit states and high-fidelity electron-nuclear gates required for the realization of a multiqubit register have already been demonstrated. Towards the goal of a scalable architecture, linking multiple such registers in a photonic network represents an important step. Multiple pairs of remotely entangled qubits can enable advanced algorithms or error correction protocols. We investigate how a photonic architecture can be extended from the intrinsic nitrogen spin to multiple $^{13}$C spins per node. Applying decoherence-protected gates sequentially, we simulate the fidelity of creating multiple pairs of remotely entangled qubits. Even though the currently achieved degree of control of $^{13}$C spins might not be sufficient for large-scale devices, the two schemes are compatible in principle. One requirement is the correction of unconditional phases acquired by unaddressed nuclear spins during a decoupling sequence.
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Submitted 12 January, 2024;
originally announced January 2024.
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Two-photon absorption in semiconductors: a multi-band length-gauge analysis
Authors:
W. -R. Hannes,
M. F. Ciappina
Abstract:
The simplest approach to deal with light excitations in direct-gap semiconductors is to model them as a two-band system: one conduction and one valence band. For such models, particularly simple analytical expressions are known to exist for the optical response such as multi-photon absorption coefficients. Here we show that generic multi-band models do not require much more complicated expressions…
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The simplest approach to deal with light excitations in direct-gap semiconductors is to model them as a two-band system: one conduction and one valence band. For such models, particularly simple analytical expressions are known to exist for the optical response such as multi-photon absorption coefficients. Here we show that generic multi-band models do not require much more complicated expressions. Our length-gauge analysis is based on the semiconductors Bloch equations in the absence of all scattering processes. In the evaluation, we focus on two-photon excitation by a pump-probe scheme with possibly non-degenerate and arbitrarily polarized configurations. The theory is validated by application to graphene and its bilayer, described by a tight-binding model, as well as bulk Zincblende semiconductors described by k.p theory.
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Submitted 17 August, 2022;
originally announced August 2022.
