Showing 1–35 of 35 results for author: Gonzalez-Zalba, M F

High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots

Authors: Constance Lainé, Giovanni A. Oakes, Virginia Ciriano-Tejel, Jacob F. Chittock-Wood, Lorenzo Peri, Michael A. Fogarty, Sofia M. Patomäki, Stefan Kubicek, David F. Wise, Ross C. C. Leon, M. Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity while being industrially manufacturable. Here, we demonstrate a compact dispersive spin-qubit sensor, a single-electron box (SEB), within a bilinear unit cell o… ▽ More Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity while being industrially manufacturable. Here, we demonstrate a compact dispersive spin-qubit sensor, a single-electron box (SEB), within a bilinear unit cell of planar MOS quantum dots (QDs) fabricated using an industrial grade 300 mm wafer process. By independent gate control of the SEB and double-quantum-dot tunnel rates, we optimize the sensor to achieve a readout fidelity of 99.92% in 340us (99% in 20us), fidelity values on a par with the best obtained with less compact sensors. Furthermore, we develop a Hidden Markov Model of the two-electron spin dynamics that enables a more accurate calculation of the measurement outcome and hence readout fidelity. Our results show how high-fidelity sensors can be introduced within silicon spin-qubit architectures while maintaining sufficient qubit connectivity as well as providing faster readout and more efficient initialisation schemes. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Compact Quantum Dot Models for Analog Microwave co-Simulation

Authors: Lorenzo Peri, Alberto Gomez-Saiz, Christopher J. B. Ford, M. Fernando Gonzalez-Zalba

Abstract: Scalable solid-state quantum computers will require integration with analog and digital electronics. Efficiently simulating the quantum-classical electronic interface is hence of paramount importance. Here, we present Verilog-A compact models with a focus on quantum-dot-based systems, relevant to semiconductor- and Majorana-based quantum computing. Our models are capable of faithfully reproducing… ▽ More Scalable solid-state quantum computers will require integration with analog and digital electronics. Efficiently simulating the quantum-classical electronic interface is hence of paramount importance. Here, we present Verilog-A compact models with a focus on quantum-dot-based systems, relevant to semiconductor- and Majorana-based quantum computing. Our models are capable of faithfully reproducing coherent quantum behavior within a standard electronic circuit simulator, enabling compromise-free co-simulation of hybrid quantum devices. In particular, we present results from co-simulations performed in Cadence Spectre, showcasing coherent quantum phenomena in circuits with both quantum and classical components using an industry-standard electronic design and automation tool. Our work paves the way for a new paradigm in the design of quantum systems, which leverages the many decades of development of electronic computer-aided design and automation tools in the semiconductor industry to now simulate and optimize quantum processing units, quantum-classical interfaces, and hybrid quantum-analog circuits. △ Less

Submitted 10 February, 2025; originally announced February 2025.

Polarimetry With Spins in the Solid State

Authors: Lorenzo Peri, Felix-Ekkehard von Horstig, Sylvain Barraud, Christopher J. B. Ford, Mónica Benito, M. Fernando Gonzalez-Zalba

Abstract: The ability for optically active media to rotate the polarization of light is the basis of polarimetry, an illustrious technique responsible for many breakthroughs in fields as varied as astronomy, medicine and material science. Here, we recast the primary mechanism for spin readout in semiconductor-based quantum computers, Pauli spin-blockade (PSB), as the natural extension of polarimetry to the… ▽ More The ability for optically active media to rotate the polarization of light is the basis of polarimetry, an illustrious technique responsible for many breakthroughs in fields as varied as astronomy, medicine and material science. Here, we recast the primary mechanism for spin readout in semiconductor-based quantum computers, Pauli spin-blockade (PSB), as the natural extension of polarimetry to the third dimension. We perform polarimetry with spins through a silicon quantum dot exchanging a hole with a boron acceptor, demonstrating the role of spin-orbit coupling in creating spin misalignment. Perfect spin alignment may be recovered by means of rotating the applied magnetic-field orientation. This work shows how spin misalignment sets a fundamental upper limit for the spin readout fidelity in quantum-computing systems based on PSB. △ Less

Submitted 23 October, 2024; originally announced October 2024.

An Integrated Deep-Cryogenic Temperature Sensor in CMOS Technology for Quantum Computing Applications

Authors: Fabio Olivieri, Grayson M. Noah, Thomas Swift, M. Fernando Gonzalez-Zalba, John J. L. Morton, Alberto Gomez-Saiz

Abstract: On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS technology based on the temperature dependence of the critical current of a superconducting (SC) thin-film. The sensor is implemented in 22-nm fully depleted silic… ▽ More On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS technology based on the temperature dependence of the critical current of a superconducting (SC) thin-film. The sensor is implemented in 22-nm fully depleted silicon on insulator (FDSOI) technology and comprises a 6 nA resolution current-output digital-to-analog converter (DAC), a transimpedance amplifier (TIA) with a SC thin-film as a gain element, and a voltage comparator. The circuit dissipates 1.5 uW and is demonstrated operating at ambient temperatures as low as 15 mK, providing a variable temperature resolution reaching sub-10 mK. △ Less

Submitted 7 January, 2025; v1 submitted 10 September, 2024; originally announced September 2024.

Comments: This work has been submitted to the IEEE for possible publication

Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process

Authors: Jacob F. Chittock-Wood, Ross C. C. Leon, Michael A. Fogarty, Tara Murphy, Sofia M. Patomäki, Giovanni A. Oakes, James Williams, Felix-Ekkehard von Horstig, Nathan Johnson, Julien Jussot, Stefan Kubicek, Bogdan Govoreanu, David F. Wise, M. Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: Advanced semiconductor manufacturing offers a promising path to scaling up silicon-based quantum processors by improving yield, uniformity, and integration. Individual spin qubit control and readout have been demonstrated in quantum dots fabricated on 300 mm wafer metal-oxide-semiconductor (MOS) processes, yet quantum processors require two-qubit interactions to operate. Here, we use a 300 mm natu… ▽ More Advanced semiconductor manufacturing offers a promising path to scaling up silicon-based quantum processors by improving yield, uniformity, and integration. Individual spin qubit control and readout have been demonstrated in quantum dots fabricated on 300 mm wafer metal-oxide-semiconductor (MOS) processes, yet quantum processors require two-qubit interactions to operate. Here, we use a 300 mm natural silicon MOS process customised for spin qubits and demonstrate coherent control of two electron spins using the exchange interaction, forming the basis for entangling gates such as $\sqrt{\text{SWAP}}$. We measure gate dephasing times of up to $T_2^{*}\approx500$ ns with a quality factor of 10. For readout, we introduce a novel dispersive readout technique, the radio-frequency electron cascade, that simplifies the qubit unit cell while providing high gain. This method achieves a signal-to-noise ratio of 6 within an integration time of 46 $μ$s, the highest-performing dispersive readout demonstration in a planar MOS process. The combination of sensitive dispersive readout with industrial-grade manufacturing marks a crucial step towards large-scale integration of silicon quantum processors. △ Less

Submitted 13 May, 2025; v1 submitted 2 August, 2024; originally announced August 2024.

Comments: 17 pages, 9 figures

Floquet interferometry of a dressed semiconductor quantum dot

Authors: Felix-Ekkehard von Horstig, Lorenzo Peri, Sylvain Barraud, Sergey N. Shevchenko, Christopher J. B. Ford, M. Fernando Gonzalez-Zalba

Abstract: A quantum system interacting with a time-periodic excitation creates a ladder of hybrid eigenstates in which the system is mixed with an increasing number of photons. This mechanism, referred to as dressing, has been observed in the context of light-matter interaction in systems as varied as atoms, molecules and solid-state qubits. In this work, we demonstrate state dressing in a semiconductor qua… ▽ More A quantum system interacting with a time-periodic excitation creates a ladder of hybrid eigenstates in which the system is mixed with an increasing number of photons. This mechanism, referred to as dressing, has been observed in the context of light-matter interaction in systems as varied as atoms, molecules and solid-state qubits. In this work, we demonstrate state dressing in a semiconductor quantum dot tunnel-coupled to a charge reservoir. We observe the emergence of a Floquet ladder of states in the system's high-frequency electrical response, manifesting as interference fringes at the multiphoton resonances despite the system lacking an avoided crossing. We study the dressed quantum dot while changing reservoir temperature, charge lifetime, and excitation amplitude and reveal the fundamental nature of the mechanism by developing a theory based on the quantum dynamics of the Floquet ladder, which is in excellent agreement with the data. Furthermore, we show how the technique finds applications in the accurate electrostatic characterisation of semiconductor quantum dots. △ Less

Submitted 18 August, 2024; v1 submitted 19 July, 2024; originally announced July 2024.

Comments: 8 Pages, 4 Figures. Supplementary: 4 Pages, 2 Figures

A Multi-Module Silicon-On-Insulator Chip Assembly Containing Quantum Dots and Cryogenic Radio-Frequency Readout Electronics

Authors: David J. Ibberson, James Kirkman, John J. L. Morton, M. Fernando Gonzalez-Zalba, Alberto Gomez-Saiz

Abstract: Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been f… ▽ More Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been fabricated using the same fully-depleted silicon-on-insulator (FDSOI) CMOS process. The assembly is constituted by three chiplets: (i) a low-noise amplifier (LNA), (ii) a single-pole eight-throw switch (SP8T), and (iii) a silicon quantum dot (QD) array. We integrate the chiplets into modules and show respectively, (i) a peak gain over 35dB with a 3dB bandwidth from 709MHz to 827MHz and an average noise temperature of 6.2K (minimum 4.2K), (ii) an insertion loss smaller than 1.1dB and a noise temperature less than 1.1K over the 0-2GHz range, and (iii) single-electron box (SEB) charge sensors. Finally, we combine all modules into a single demonstration showing time-domain radio-frequency multiplexing of two SEBs paving the way to an all-silicon quantum computing system. △ Less

Submitted 21 November, 2024; v1 submitted 7 May, 2024; originally announced May 2024.

Comments: This work has been submitted to the IEEE for possible publication

Journal ref: 31st IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2024

Electrical readout of spins in the absence of spin blockade

Authors: Felix-Ekkehard von Horstig, Lorenzo Peri, Sylvain Barraud, Jason A. W. Robinson, Monica Benito, Frederico Martins, M. Fernando Gonzalez-Zalba

Abstract: In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout requiring only two bound spins for its implementation which, in conjunction with charge sensing techniques, has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying e… ▽ More In semiconductor nanostructures, spin blockade (SB) is the most scalable mechanism for electrical spin readout requiring only two bound spins for its implementation which, in conjunction with charge sensing techniques, has led to high-fidelity readout of spins in semiconductor-based quantum processors. However, various mechanisms may lift SB, such as strong spin-orbit coupling (SOC) or low-lying excited states, hence posing challenges to perform spin readout at scale and with high fidelity in such systems. Here, we present a method, based on the dependence of the two-spin system polarizability on energy detuning, to perform spin state readout even when SB lifting mechanisms are dominant. It leverages SB lifting as a resource to detect different spin measurement outcomes selectively and positively. We demonstrate the method using a hybrid system formed by a quantum dot (QD) and a Boron acceptor in a silicon p-type transistor and show spin selective and positive readout of different spin states under SB lifting conditions due to (i) SOC and (ii) low-lying orbital states in the QD. We further use the method to determine the detuning-dependent spin relaxation time of 0.1-8~$μ$s. Our method should help perform high-fidelity projective spin measurements in systems subject to strong SOC and may facilitate quantum tomography and state leakage studies. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Comments: 13 pages, 10 figures

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Authors: Edward J. Thomas, Virginia N. Ciriano-Tejel, David F. Wise, Domenic Prete, Mathieu de Kruijf, David J. Ibberson, Grayson M. Noah, Alberto Gomez-Saiz, M. Fernando Gonzalez-Zalba, Mark A. I. Johnson, John J. L. Morton

Abstract: Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and po… ▽ More Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and potential for compatibility with large-scale integration. Here, we demonstrate the integration of 1024 silicon quantum dots with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, enabling characteristic data across the quantum dot array to be acquired in just 5 minutes. We achieve this by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, reaching a minimum integration time of 160 ps. Key quantum dot parameters are extracted by fast automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room temperature transistor behaviour that may be used as a proxy for in-line process monitoring. Our results show how rapid large-scale studies of silicon quantum devices can be performed at lower temperatures and measurement rates orders of magnitude faster than current probing techniques, and form a platform for the future on-chip addressing of large scale qubit arrays. △ Less

Submitted 31 October, 2023; originally announced October 2023.

Comments: Main text: 14 pages, 8 figures, 1 table Supplementary: 8 pages, 6 figures

Journal ref: Nat Electron 1 9 (2025)

Alternative fast quantum logic gates using nonadiabatic Landau-Zener-Stückelberg-Majorana transitions

Authors: A. I. Ryzhov, O. V. Ivakhnenko, S. N. Shevchenko, M. F. Gonzalez-Zalba, Franco Nori

Abstract: A conventional realization of quantum logic gates and control is based on resonant Rabi oscillations of the occupation probability of the system. This approach has certain limitations and complications, like counter-rotating terms. We study an alternative paradigm for implementing quantum logic gates based on Landau-Zener-Stückelberg-Majorana (LZSM) interferometry with non-resonant driving and the… ▽ More A conventional realization of quantum logic gates and control is based on resonant Rabi oscillations of the occupation probability of the system. This approach has certain limitations and complications, like counter-rotating terms. We study an alternative paradigm for implementing quantum logic gates based on Landau-Zener-Stückelberg-Majorana (LZSM) interferometry with non-resonant driving and the alternation of adiabatic evolution and non-adiabatic transitions. Compared to Rabi oscillations, the main differences are a non-resonant driving frequency and a small number of periods in the external driving. We explore the dynamics of a multilevel quantum system under LZSM drives and optimize the parameters for increasing single- and two-qubit gates speed. We define the parameters of the external driving required for implementing some specific gates using the adiabatic-impulse model. The LZSM approach can be applied to a large variety of multi-level quantum systems and external driving, providing a method for implementing quantum logic gates on them. △ Less

Submitted 27 October, 2023; originally announced October 2023.

Comments: 15 pages, 12 figures

Journal ref: Phys. Rev. Research 6, 033340 (2024)

Unified linear response theory of quantum electronic circuits

Authors: L. Peri, M. Benito, C. J. B. Ford, M. F. Gonzalez-Zalba

Abstract: Modelling the electrical response of multi-level quantum systems at finite frequency has been typically performed in the context of two incomplete paradigms: (i) input-output theory, which is valid at any frequency but neglects dynamic losses, and (ii) semiclassical theory, which captures well dynamic dissipation effects but is only accurate at low frequencies. Here, we develop a unifying theory,… ▽ More Modelling the electrical response of multi-level quantum systems at finite frequency has been typically performed in the context of two incomplete paradigms: (i) input-output theory, which is valid at any frequency but neglects dynamic losses, and (ii) semiclassical theory, which captures well dynamic dissipation effects but is only accurate at low frequencies. Here, we develop a unifying theory, valid for arbitrary frequencies, that captures both the quantum behaviour and the non-unitary effects introduced by relaxation and dephasing. The theory allows a multi-level system to be described by a universal small-signal equivalent circuit model, a resonant RLC circuit, whose topology only depends on the number of energy levels. We apply our model to a double quantum-dot charge qubit and a Majorana qubit, showing the capability to continuously describe the systems from adiabatic to resonant and from coherent to incoherent, suggesting new and realistic experiments for improved quantum state readout. Our model will facilitate the design of hybrid quantum-classical circuits and the simulation of qubit control and quantum state readout. △ Less

Submitted 29 May, 2024; v1 submitted 26 October, 2023; originally announced October 2023.

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Authors: Mathieu de Kruijf, Grayson M. Noah, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to ass… ▽ More Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to assess the local temperature increase produced by an active FET placed in close proximity. We study the impact of both static and dynamic operation regimes. When the FET is operated statically, we find a power budget of 45 nW at 100 nm separation whereas at 216 $μ$m the power budget raises to 150 $μ$W. When operated dynamically, we observe negligible temperature increase for the switch frequencies tested up to 10 MHz. Our work describes a method to accurately map out the available power budget at a distance from a solid-state quantum processor and indicate under which conditions cryoelectronics circuits may allow the operation of hybrid quantum-classical systems. △ Less

Submitted 17 October, 2023; originally announced October 2023.

CMOS on-chip thermometry at deep cryogenic temperatures

Authors: Grayson M. Noah, Thomas Swift, Mathieu de Kruijf, Alberto Gomez-Saiz, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon o… ▽ More Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon oxide, and the limited cooling power budgets make local on-chip temperature sensing even more important. Here, we report four different methods for on-chip temperature measurements native to complementary metal-oxide-semiconductor (CMOS) industrial fabrication processes. These include secondary and primary thermometry methods and cover conventional thermometry structures used at room temperature as well as methods exploiting phenomena which emerge at cryogenic temperatures, such as superconductivity and Coulomb blockade. We benchmark the sensitivity of the methods as a function of temperature and use them to measure local excess temperature produced by on-chip heating elements. Our results demonstrate thermometry methods that may be readily integrated in CMOS chips with operation from the milliKelivin range to room temperature. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Beyond-adiabatic Quantum Admittance of a Semiconductor Quantum Dot at High Frequencies: Rethinking Reflectometry as Polaron Dynamics

Authors: L. Peri, G. A. Oakes, L. Cochrane, C. J. B. Ford, M. F. Gonzalez-Zalba

Abstract: Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-cou… ▽ More Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their performance in larger electronic circuits. Here, we develop a self-consistent quantum master equation formalism to obtain the admittance of a quantum dot tunnel-coupled to a charge reservoir under the effect of a coherent photon bath. We find a general expression for the admittance that captures the well-known semiclassical (thermal) limit, along with the transition to lifetime and power broadening regimes due to the increased coupling to the reservoir and amplitude of the photonic drive, respectively. Furthermore, we describe two new photon-mediated regimes: Floquet broadening, determined by the dressing of the QD states, and broadening determined by photon loss in the system. Our results provide a method to simulate the high-frequency behaviour of QDs in a wide range of limits, describe past experiments, and propose novel explorations of QD-photon interactions. △ Less

Submitted 18 March, 2024; v1 submitted 31 July, 2023; originally announced July 2023.

Journal ref: Quantum 8, 1294 (2024)

Pipeline quantum processor architecture for silicon spin qubits

Authors: S. M. Patomäki, M. F. Gonzalez-Zalba, M. A. Fogarty, Z. Cai, S. C. Benjamin, J. J. L. Morton

Abstract: Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states… ▽ More Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states through a layered physical array of structures which realise single and two-qubit gates. Such an approach lends itself to NISQ applications such as variational quantum eigensolvers which require numerous repetitions of the same calculation, or small variations thereof. In exchange for simplifying run-time control, a larger number of physical structures is required for shuttling the qubits as the circuit depth now corresponds to an array of physical structures. However, qubit states can be `pipelined' densely through the arrays for repeated runs to make more efficient use of physical resources. We describe how the qubit pipeline can be implemented in a silicon spin-qubit platform, to which it is well suited to due to the high qubit density and scalability. In this implementation, we describe the physical realisation of single and two qubit gates which represent a universal gate set that can achieve fidelities of $\mathcal{F} \geq 0.9999$, even under typical qubit frequency variations. △ Less

Submitted 13 June, 2023; originally announced June 2023.

Comments: 21 pages (13 for main + 8 for supplement), 9 figures (4 for main + 5 for supplement)

Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots

Authors: Felix-Ekkehard von Horstig, David J. Ibberson, Giovanni A. Oakes, Laurence Cochrane, David F. Wise, Nadia Stelmashenko, Sylvain Barraud, Jason A. W. Robinson, Frederico Martins, M. Fernando Gonzalez-Zalba

Abstract: Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing qu… ▽ More Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high-$κ$ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as $LC$ filters that, when interfaced with the silicon chip, result in a resonant frequency $f=2.12$ GHz, a loaded quality factor $Q=850$, and a resonator impedance $Z=470$ $Ω$. Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/$f$ dependence across the whole frequency spectrum as well as a charge noise level of 4 $μ$eV/$\sqrt{\text{Hz}}$ at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum device to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication. △ Less

Submitted 2 May, 2024; v1 submitted 26 April, 2023; originally announced April 2023.

Comments: Main: 8 pages, 4 figures. Supplementary: 4 pages, 7 figures

An elongated quantum dot as a distributed charge sensor

Authors: S. M. Patomäki, J. Williams, F. Berritta, C. Laine, M. A. Fogarty, R. C. C. Leon, J. Jussot, S. Kubicek, A. Chatterjee, B. Govoreanu, F. Kuemmeth, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate… ▽ More Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Comments: 14 pages, 9 figures

Report number: NBI QDEV 2024

Journal ref: Phys. Rev. Applied 21, 054042 (2024)

A quantum dot-based frequency multiplier

Authors: G. A. Oakes, L. Peri, L. Cochrane, F. Martins, L. Hutin, B. Bertrand, M. Vinet, A. Gomez Saiz, C. J. B. Ford, C. G. Smith, M. F. Gonzalez-Zalba

Abstract: Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance… ▽ More Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors. △ Less

Submitted 25 November, 2022; originally announced November 2022.

Comments: 17 pages, 16 figures

Gate-based spin readout of hole quantum dots with site-dependent $g-$factors

Authors: Angus Russell, Alexander Zotov, Ruichen Zhao, Andrew S. Dzurak, M. Fernando Gonzalez-Zalba, Alessandro Rossi

Abstract: The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameter… ▽ More The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameters such as the Landé $g-$factor, requiring careful characterisation for reliable qubit operation. Here, we experimentally investigate a hole double quantum dot in silicon by carrying out spin readout with gate-based reflectometry. We show that characteristic features in the reflected phase signal arising from magneto-spectroscopy convey information on site-dependent $g-$factors in the two dots. Using analytical modeling, we extract the physical parameters of our system and, through numerical calculations, we extend the results to point out the prospect of conveniently extracting information about the local $g-$factors from reflectometry measurements. △ Less

Submitted 17 April, 2023; v1 submitted 27 June, 2022; originally announced June 2022.

Comments: Main manuscript: 12 pages, 8 figures. Supplementary Information: 3 pages, 2 figures

Journal ref: Phys. Rev. Applied 19, 044039 (2023)

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

Authors: G. A. Oakes, V. N. Ciriano-Tejel, D. Wise, M. A. Fogarty, T. Lundberg, C. Lainé, S. Schaal, F. Martins, D. J. Ibberson, L. Hutin, B. Bertrand, N. Stelmashenko, J. A. W. Robinson, L. Ibberson, A. Hashim, I. Siddiqi, A. Lee, M. Vinet, C. G. Smith, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we… ▽ More Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Comments: Main: 9 pages, 4 figures, 1 table. Supplementary: 33 pages, 18 figures

Compilation and scaling strategies for a silicon quantum processor with sparse two-dimensional connectivity

Authors: O. Crawford, J. R. Cruise, N. Mertig, M. F. Gonzalez-Zalba

Abstract: Inspired by the challenge of scaling up existing silicon quantum hardware, we investigate compilation strategies for sparsely-connected 2d qubit arrangements and propose a spin-qubit architecture with minimal compilation overhead. Our architecture is based on silicon nanowire split-gate transistors which can form finite 1d chains of spin-qubits and allow the execution of two-qubit operations such… ▽ More Inspired by the challenge of scaling up existing silicon quantum hardware, we investigate compilation strategies for sparsely-connected 2d qubit arrangements and propose a spin-qubit architecture with minimal compilation overhead. Our architecture is based on silicon nanowire split-gate transistors which can form finite 1d chains of spin-qubits and allow the execution of two-qubit operations such as Swap gates among neighbors. Adding to this, we describe a novel silicon junction which can couple up to four nanowires into 2d arrangements via spin shuttling and Swap operations. Given these hardware elements, we propose a modular sparse 2d spin-qubit architecture with unit cells consisting of diagonally-oriented squares with nanowires along the edges and junctions on the corners. We show that this architecture allows for compilation strategies which outperform the best-in-class compilation strategy for 1d chains, not only asymptotically, but also down to the minimal structure of a single square. The proposed architecture exhibits favorable scaling properties which allow for balancing the trade-off between compilation overhead and co-location of classical control electronics within each square by adjusting the length of the nanowires. An appealing feature of the proposed architecture is its manufacturability using complementary-metal-oxide-semiconductor (CMOS) fabrication processes. Finally, we note that our compilation strategies, while being inspired by spin-qubits, are equally valid for any other quantum processor with sparse 2d connectivity. △ Less

Submitted 8 January, 2022; originally announced January 2022.

Comments: 19 pages, 10 figures

Quantum Dot-Based Parametric Amplifiers

Authors: Laurence Cochrane, Theodor Lundberg, David J. Ibberson, Lisa Ibberson, Louis Hutin, Benoit Bertrand, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Ashwin A. Seshia, M. Fernando Gonzalez-Zalba

Abstract: Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for p… ▽ More Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8~GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields. △ Less

Submitted 2 December, 2021; v1 submitted 23 November, 2021; originally announced November 2021.

Comments: 7 pages, 4 figures

Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot

Authors: Theodor Lundberg, David J. Ibberson, Jing Li, Louis Hutin, José C. Abadillo-Uriel, Michele Filippone, Benoit Bertrand, Andreas Nunnenkamp, Chang-Min Lee, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Lisa Ibberson, Yann-Michel Niquet, M. Fernando Gonzalez-Zalba

Abstract: Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mech… ▽ More Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $μ$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control. △ Less

Submitted 20 October, 2021; v1 submitted 19 October, 2021; originally announced October 2021.

Comments: 12 pages, 10 figures. Minor updates to notation

Journal ref: npj Quantum Information 10, 28 (2024)

Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip

Authors: Andrea Ruffino, Tsung-Yeh Yang, John Michniewicz, Yatao Peng, Edoardo Charbon, Miguel Fernando Gonzalez-Zalba

Abstract: Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quan… ▽ More Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology. △ Less

Submitted 20 January, 2021; originally announced January 2021.

Roadmap on quantum nanotechnologies

Authors: Arne Laucht, Frank Hohls, Niels Ubbelohde, M Fernando Gonzalez-Zalba, David J Reilly, Søren Stobbe, Tim Schröder, Pasquale Scarlino, Jonne V Koski, Andrew Dzurak, Chih-Hwan Yang, Jun Yoneda, Ferdinand Kuemmeth, Hendrik Bluhm, Jarryd Pla, Charles Hill, Joe Salfi, Akira Oiwa, Juha T Muhonen, Ewold Verhagen, Matthew D LaHaye, Hyun Ho Kim, Adam W Tsen, Dimitrie Culcer, Attila Geresdi , et al. (4 additional authors not shown)

Abstract: Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu… ▽ More Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: Roadmap article with contributed sections and subsections on: 1. Metrology and sensing 2. Quantum light sources, cavities and detectors 3. Quantum computing with spins 4. Nano and opto-mechanics 5. Low-dimensional systems 6. Molecular devices 7. Nanoplasmonics (47 pages, 25 figures). Contains arXiv:1907.02625, arXiv:1907.07087, arXiv:2001.11119, arXiv:2011.13907

Report number: NBI QDev 2021

Journal ref: Nanotechnology 32, 162003 (2021)

Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives

Authors: M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet, A. S. Dzurak

Abstract: Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in compu… ▽ More Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology. △ Less

Submitted 8 April, 2023; v1 submitted 23 November, 2020; originally announced November 2020.

Comments: Comments welcome

Journal ref: Nature Electronics 4, 872, 2021

Charge noise and overdrive errors in reflectometry-based charge, spin and Majorana qubit readout

Authors: Vahid Derakhshan Maman, M. F. Gonzalez-Zalba, András Pályi

Abstract: Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits, singlet-triplet spin qubits, and Majorana qubits. In our model, we account for readout errors due to slow charge noise, and due to overdriving, when a too strong probe is ca… ▽ More Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits, singlet-triplet spin qubits, and Majorana qubits. In our model, we account for readout errors due to slow charge noise, and due to overdriving, when a too strong probe is causing errors. A key result is that for charge and spin qubits, the readout fidelity saturates at large probe strengths, whereas for Majorana qubits, there is an optimal probe strength which provides a maximized readout fidelity. We also point out the existence of severe readout errors appearing in a resonance-like fashion as the pulse strength is increased, and show that these errors are related to probe-induced multi-photon transitions. Besides providing practical guidelines toward optimized readout, our study might also inspire ways to use gate reflectometry for device characterization. △ Less

Submitted 22 June, 2020; originally announced June 2020.

Comments: 10+3 pages, 5+1 figures

Journal ref: Phys. Rev. Applied 14, 064024 (2020)

Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling

Authors: V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal, L. Hutin, B. Bertrand, Lisa Ibberson, M. F. Gonzalez-Zalba, J. Li, Y. -M. Niquet, M. Vinet, J. J. L. Morton

Abstract: Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w… ▽ More Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures. △ Less

Submitted 12 June, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: 8 pages, 4 figures, 57 cites. v3: added acknowledges

Journal ref: PRX Quantum 2, 010353 (2021)

A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Authors: Rubén M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba

Abstract: The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent single-electron device that operates as an electrically-tunable capacitor. This system exhibits a sinusoidal dependence of the capacitance with voltage, in whic… ▽ More The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent single-electron device that operates as an electrically-tunable capacitor. This system exhibits a sinusoidal dependence of the capacitance with voltage, in which the amplitude of the capacitance changes and the voltage period can be tuned by electric means. The device concept is based on double-passage Landau-Zener-Stückelberg-Majorana interferometry of a coupled two-level system that is further tunnel-coupled to an electron reservoir. We test this model experimentally by performing Landau-Zener-Stückelberg-Majorana interferometry in a single-electron double quantum dot coupled to an electron reservoir and show that the voltage period of the capacitance oscillations is directly proportional to the excitation frequency and that the amplitude of the oscillations depends on the dynamical parameters of the system: intrinsic relaxation and coherence time, as well as the tunneling rate to the reservoir. Our work opens up an opportunity to use the non-linear capacitance of double quantum dots to obtain enhanced device functionalities. △ Less

Submitted 15 August, 2019; v1 submitted 12 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 100, 205425 (2019)

Fast gate-based readout of silicon quantum dots using Josephson parametric amplification

Authors: S. Schaal, I. Ahmed, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, M. Vinet, C. -M. Lee, N. Stelmashenko, J. W. A. Robinson, J. Y. Qiu, S. Hacohen-Gourgy, I. Siddiqi, M. F. Gonzalez-Zalba, J. J. L. Morton

Abstract: Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-… ▽ More Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed. △ Less

Submitted 23 July, 2019; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: Wrong figure reference corrected

Journal ref: Phys. Rev. Lett. 124, 067701 (2020)

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Authors: S. Schaal, A. Rossi, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and ap… ▽ More Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic random access architecture for efficient readout of complex quantum circuits. Our circuit is divided into cells, each containing a CMOS quantum dot (QD) and a field-effect transistor that enables selective readout of the QD, as well as charge storage on the QD gate similar to 1T-1C DRAM technology. We show dynamic readout of two cells by interfacing them with a single radio-frequency resonator. Our results demonstrate a path to reducing the number of input lines per qubit and enable addressing of large-scale device arrays. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Journal ref: Nature Electronics (2019)

Gate-based single-shot readout of spins in silicon

Authors: A. West, B. Hensen, A. Jouan, T. Tanttu, C. H. Yang, A. Rossi, M. F. Gonzalez-Zalba, F. E. Hudson, A. Morello, D. J. Reilly, A. S. Dzurak

Abstract: Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the f… ▽ More Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using on-chip charge sensors, capacitively coupled to the quantum dots. However, as the number of qubits is increased, this approach becomes impractical due to the footprint and complexity of the charge sensors, combined with the required proximity to the quantum dots. Alternatively, the spin state can be measured directly by detecting the complex impedance of spin-dependent electron tunnelling between quantum dots. This can be achieved using radio-frequency reflectometry on a single gate electrode defining the quantum dot itself, significantly reducing gate count and architectural complexity, but thus far it has not been possible to achieve single-shot spin readout using this technique. Here, we detect single electron tunnelling in a double quantum dot and demonstrate that gate-based sensing can be used to read out the electron spin state in a single shot, with an average readout fidelity of 73%. The result demonstrates a key step towards the readout of many spin qubits in parallel, using a compact gate design that will be needed for a large-scale semiconductor quantum processor. △ Less

Submitted 1 October, 2018; v1 submitted 6 September, 2018; originally announced September 2018.

Journal ref: Nature Nanotechnology 14, 437-441 (2019)

Radio-frequency capacitive gate-based sensing

Authors: Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba

Abstract: Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting… ▽ More Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $μ$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $μ$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout. △ Less

Submitted 29 January, 2018; originally announced January 2018.

Report number: 014018

Journal ref: Phys. Rev. Applied 10, 014018 (2018)

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit

Authors: S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba

Abstract: Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum d… ▽ More Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $δq=165\, μe \mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor. △ Less

Submitted 14 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. Applied 9, 054016 (2018)

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Authors: M. Fernando Gonzalez-Zalba, Sergey N. Shevchenko, Sylvain Barraud, J. Robert Johansson, Andrew J. Ferguson, Franco Nori, Andreas C. Betz

Abstract: Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge o… ▽ More Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitance changes at the inter-dot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-St{ü}ckelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunnelling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, $T_2\approx 100$~ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Journal ref: Nano Letters 16 (3), 1614 (2016)