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Fabrication of superconducting through-silicon vias
Authors:
Justin L. Mallek,
Donna-Ruth W. Yost,
Danna Rosenberg,
Jonilyn L. Yoder,
Gregory Calusine,
Matt Cook,
Rabindra Das,
Alexandra Day,
Evan Golden,
David K. Kim,
Jeffery Knecht,
Bethany M. Niedzielski,
Mollie Schwartz,
Arjan Sevi,
Corey Stull,
Wayne Woods,
Andrew J. Kerman,
William D. Oliver
Abstract:
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challen…
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Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challenging. Here, we discuss our approach for realizing high-aspect-ratio superconducting TSVs\textemdash 10 $μ$m wide by 20 $μ$m long by 200 $μ$m deep\textemdash with densities of 100 electrically isolated TSVs per square millimeter. We characterize the DC and microwave performance of superconducting TSVs at cryogenic temperatures and demonstrate superconducting critical currents greater than 20 mA. These high-aspect-ratio, high critical current superconducting TSVs will enable high-density vertical signal routing within superconducting quantum processors.
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Submitted 15 March, 2021;
originally announced March 2021.
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Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators
Authors:
Alexander Melville,
Greg Calusine,
Wayne Woods,
Kyle Serniak,
Evan Golden,
Bethany M. Niedzielski,
David K. Kim,
Arjan Sevi,
Jonilyn L. Yoder,
Eric A. Dauler,
William D. Oliver
Abstract:
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific…
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Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.
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Submitted 14 July, 2020;
originally announced July 2020.
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Solid-state qubits integrated with superconducting through-silicon vias
Authors:
Donna-Ruth W. Yost,
Mollie E. Schwartz,
Justin Mallek,
Danna Rosenberg,
Corey Stull,
Jonilyn L. Yoder,
Greg Calusine,
Matt Cook,
Rabindra Das,
Alexandra L. Day,
Evan B. Golden,
David K. Kim,
Alexander Melville,
Bethany M. Niedzielski,
Wayne Woods,
Andrew J. Kerman,
Willam D. Oliver
Abstract:
As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays -- provided they…
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As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays -- provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or low-loss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs -- 10 $μ$m wide by 20 $μ$m long by 200 $μ$m deep -- with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.
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Submitted 29 September, 2020; v1 submitted 23 December, 2019;
originally announced December 2019.
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Determining interface dielectric losses in superconducting coplanar waveguide resonators
Authors:
Wayne Woods,
Greg Calusine,
Alexander Melville,
Arjan Sevi,
Evan Golden,
David K. Kim,
Danna Rosenberg,
Jonilyn L. Yoder,
William D. Oliver
Abstract:
Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance in superconducting circuits. In this work, we present a method for quantifying the TLS losses of different bulk and interfacial dielectrics present in supercondu…
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Superconducting quantum computing architectures comprise resonators and qubits that experience energy loss due to two-level systems (TLS) in bulk and interfacial dielectrics. Understanding these losses is critical to improving performance in superconducting circuits. In this work, we present a method for quantifying the TLS losses of different bulk and interfacial dielectrics present in superconducting coplanar waveguide (CPW) resonators. By combining statistical characterization of sets of specifically designed CPW resonators on isotropically etched silicon substrates with detailed electromagnetic modeling, we determine the separate loss contributions from individual material interfaces and bulk dielectrics. This technique for analyzing interfacial TLS losses can be used to guide targeted improvements to qubits, resonators, and their superconducting fabrication processes.
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Submitted 30 August, 2018;
originally announced August 2018.
